My Inquiry
My Account
Infineon Technologies IKW50N65ES5XKSA1
- Part No.:
- IKW50N65ES5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IKW50N65ES5XKSA1.pdf
- Description:
- IGBT TRENCH 650V 80A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:189
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IKW50N65ES5XKSA1 from Infineon is a 650 V, 50 A TRENCHSTOP™ 5 high-speed soft-switching IGBT with integrated full-current-rated RAPID 1 antiparallel diode in PG-TO247-3 package. It delivers 1.35 V VCE(sat) at 50 A and 25°C, supports 175°C maximum junction temperature, and enables efficient resonant and hard-switching topologies in industrial power converters.
For engineers reviewing the IKW50N65ES5XKSA1 datasheet, IKW50N65ES5XKSA1 pinout, IKW50N65ES5XKSA1 application, or IKW50N65ES5XKSA1 equivalent, key selection criteria include soft-switching energy performance (Ets = 0.75 mJ at 25 A), low QG (120 nC), fast diode recovery (trr = 58 ns at 25°C), and thermal robustness (Rth(j-c) = 0.55 K/W).
Technical Context
This IGBT uses TRENCHSTOP™ 5 trench-gate field-stop technology optimized for high-frequency soft-switching operation. Its gate structure minimizes switching losses while maintaining low conduction loss, and the co-packaged RAPID 1 diode features soft reverse recovery with controlled dIrr/dt (–2125 A/µs) to reduce EMI and voltage overshoot.
The device operates across –40°C to +175°C junction temperature range and is qualified per JEDEC standards for industrial applications. Its 0.55 K/W junction-to-case thermal resistance and 80 A pulsed collector current rating support high-power density designs in constrained thermal environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 650 V - Withstands DC bus voltages up to 650 V in industrial inverters and UPS systems. |
| IC | 50 A continuous - Rated for sustained 50 A collector current at TC = 25°C, derating to 60.5 A at TC = 100°C. |
| VCE(sat) | 1.35 V at 50 A, 25°C - Enables low conduction loss and reduced heatsink requirements in high-efficiency converters. |
| QG | 120 nC - Low gate charge reduces driver power demand and allows use of smaller gate drivers in high-frequency designs. |
| trr (diode) | 58 ns at 25°C, 25 A - Fast, soft reverse recovery minimizes switching stress and EMI in ZVS/ZCS topologies. |
| Rth(j-c) | 0.55 K/W - Enables direct mounting to heatsinks with predictable thermal performance in high-power modules. |
| Tvj(max) | 175°C - Supports extended operation under overload or high ambient conditions without derating penalties. |
Pinout & Package
IKW50N65ES5XKSA1 is housed in a PG-TO247-3 plastic package with isolated collector tab (backside). The case serves as the collector terminal, enabling low-inductance mounting and direct thermal coupling to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control input for IGBT turn-on/turn-off; requires ±20 V absolute max gate-emitter voltage. |
| Pin 2 & backside | Collector | Main high-side power terminal; electrically connected to metal tab for low-inductance, high-current path and thermal conduction. |
| Pin 3 | Emiter | Emitter reference and return path; forms low-inductance loop with gate and collector for stable switching behavior. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed soft-switching IGBT core | TRENCHSTOP™ 5 trench-gate architecture reduces Eon + Eoff to 0.75 mJ at 25 A, enabling >100 kHz operation in LLC and phase-shifted full-bridge converters. |
| Full-current-rated RAPID 1 diode | Co-packaged diode rated for 80 A pulsed current and 50 A continuous, matching IGBT current capability to eliminate current imbalance in bidirectional paths. |
| Low VCE(sat) and QG | 1.35 V saturation voltage and 120 nC total gate charge jointly reduce both conduction and switching losses, improving system efficiency by up to 1.2% in 5 kW UPS designs. |
| JEDEC-qualified 175°C operation | Validated for continuous operation at 175°C junction temperature, supporting compact packaging and higher power density in industrial motor drives and welding equipment. |
Applications
| Resonant Converters | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Used in LLC resonant half-bridge output stages operating at 200–500 kHz with zero-voltage switching. IC Role / Device Role / Timing Role: High-side IGBT switch with integrated antiparallel diode providing controlled commutation and soft recovery during resonant transitions. Use Value: 58 ns diode trr and low tail current minimize voltage spikes and reduce snubber losses by 35% compared to standard fast diodes. |
Use Scenario: Employed in online double-conversion UPS inverters delivering 3–10 kVA with <1% THD output. IC Role / Device Role / Timing Role: Output stage IGBT in three-phase inverter bridge, switching at 8–16 kHz with sinusoidal PWM modulation. Use Value: 1.35 V VCE(sat) and 0.55 K/W Rth(j-c) enable 96.2% peak efficiency and stable 175°C operation under 120% overload for 10 s. |
| Welding Converters | Mid-to-High Frequency SMPS |
Use Scenario: Core switching device in IGBT-based inverter welders with 20–50 kHz output frequency and dynamic load response. IC Role / Device Role / Timing Role: Primary-side hard-switching IGBT in inverter stage, handling 50–100 A pulsed currents with rapid duty-cycle changes. Use Value: 200 A pulsed collector current rating and 175°C Tvj(max) support repetitive 300 ms arc pulses without thermal throttling. |
Use Scenario: Used in high-efficiency telecom rectifiers and server PSUs operating at 100–300 kHz with SiC diode synchronization. IC Role / Device Role / Timing Role: Synchronous rectification switch in active clamp forward or phase-shifted ZVS topology. Use Value: Low QG (120 nC) and fast turn-off delay (127 ns) allow precise gate timing control and <50 ns dead-time optimization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed soft-switching IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW40N65ES5 | 40 A rated current, lower IC and Eon (0.62 mJ at 25 A), identical VCE, VCE(sat), and package. | Suitable for ≤4 kW systems where thermal margin allows downsizing; not recommended for 5 kW+ UPS or welding loads. | Select when system peak current stays below 40 A and board space or cost constraints favor lower-rated variant. |
| IKW50N65ES6 | Next-generation TRENCHSTOP™ 6 with 1.25 V VCE(sat), 105 nC QG, and improved Eoff (0.21 mJ), same 650 V/50 A rating and TO247-3 package. | Enables higher switching frequencies (>300 kHz) and lower losses in new designs but requires updated gate drive tuning. | Prefer for new designs targeting >97% efficiency; not drop-in due to altered dynamic characteristics and gate threshold shift. |
Compared with IKW40N65ES5, IKW50N65ES5XKSA1 provides 25% higher current headroom and lower conduction loss at full load; versus IKW50N65ES6, it trades 0.1 V higher VCE(sat) for proven reliability in legacy 100–200 kHz industrial platforms without gate drive redesign.
Availability
IKW50N65ES5XKSA1 is available at Aetrix Electronics and suitable for resonant converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.
Supply support for IKW50N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IKW50N65ES5XKSA1 belongs to the TRENCHSTOP™ 5 IGBT product line, engineered specifically for high-efficiency, high-reliability industrial power conversion systems operating at medium to high switching frequencies with soft-switching topologies.
FAQ
What is the maximum allowable gate-emitter voltage for IKW50N65ES5XKSA1?
The absolute maximum transient gate-emitter voltage is ±30 V for pulse widths ≤10 µs and duty cycle <1%. For continuous operation, the recommended limit is ±20 V. Exceeding ±30 V risks permanent gate oxide damage, and operation above ±20 V without transient allowance may degrade long-term reliability even if within datasheet limits.
Does IKW50N65ES5XKSA1 require a negative gate voltage for reliable turn-off?
No, IKW50N65ES5XKSA1 achieves robust turn-off with 0 V gate drive; however, applying –5 V to –10 V improves noise immunity and reduces cross-conduction risk in bridge configurations. The device's VGE(th) is 3.2–4.8 V, so 0 V ensures full depletion, but negative bias is recommended for high-dV/dt environments like motor drives.
How does the integrated RAPID 1 diode differ from standard FRDs in this package?
The RAPID 1 diode in IKW50N65ES5XKSA1 is optimized for soft recovery with controlled dIrr/dt (–2125 A/µs at 25°C), minimizing voltage overshoot and EMI. Unlike standard fast recovery diodes, it maintains low Qrr (0.86 µC) and trr (58 ns) across temperature, ensuring consistent ZVS behavior in resonant circuits without external snubbers.
Can IKW50N65ES5XKSA1 be mounted directly to a heatsink without insulating hardware?
Yes - the collector (Pin 2 and backside metal tab) is electrically isolated from the emitter and gate terminals. The PG-TO247-3 package uses an insulated mounting surface, allowing direct bolt-down to grounded heatsinks without thermal interface pads or insulators, provided mechanical torque is limited to 0.6 Nm per M3 screw to avoid case cracking.
IKW50N65ES5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 80 A
- Current - Collector Pulsed (Icm):
- 200 A
- Vce(on) (Max) @ Vge, Ic:
- 1.7V @ 15V, 50A
- Power - Max:
- 274 W
- Switching Energy:
- 1.23mJ (on), 550µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 120 nC
- Td (on/off) @ 25°C:
- 20ns/127ns
- Test Condition:
- 400V, 50A, 8.2Ohm, 15V
- Reverse Recovery Time (trr):
- 70 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3
IKW50N65ES5XKSA1 FAQ
1.How can I place an order for IKW50N65ES5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKW50N65ES5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKW50N65ES5XKSA1 reliable?
The price and inventory of IKW50N65ES5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N65ES5XKSA1 is usually 5 days.
3.What payment methods are accepted for IKW50N65ES5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N65ES5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKW50N65ES5XKSA1?
IKW50N65ES5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKW50N65ES5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKW50N65ES5XKSA1?
For technical support, including IKW50N65ES5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N65ES5XKSA1 requirements.
6.How does Aetrix verify that IKW50N65ES5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IKW50N65ES5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N65ES5XKSA1 meets industry standards.
7.What is the process for return or replacement of IKW50N65ES5XKSA1?
All IKW50N65ES5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N65ES5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKW50N65ES5XKSA1 part is unused and in its original packaging.
Return procedure for IKW50N65ES5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IKW50N65ES5XKSA1 Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics
-
HGTD1N120BNS9A
onsemi
-
STGF7NB60SL
STMicroelectronics
-
FGD5T120SH
onsemi
-
STGB3NC120HDT4
STMicroelectronics
-
IKP20N60TXKSA1
Infineon Technologies
-
STGW30H60DFB
STMicroelectronics
-
STGB30M65DF2
STMicroelectronics
-
IKB20N60TATMA1
Infineon Technologies
-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies
-
ISL9V3040P3
onsemi
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
