Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N65ET7XKSA1

Name: IKW50N65ET7XKSA1
Brand: Infineon Technologies
SKU: IKW50N65ET7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKW50N65ET7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N65ET7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 50A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:200

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKW50N65ET7XKSA1 from Infineon is a 650 V, 50 A low-loss IGBT7 Duopack with integrated ultra-soft fast-recovery anti-parallel diode, trench-and-fieldstop IGBT structure, V_CE(sat) = 1.65 V (T_vj = 25 °C), t_SC = 5 µs at 100 °C, and T_vj(max) = 175 °C - designed for high-efficiency industrial motor drives and solar string inverters.

For engineers reviewing the IKW50N65ET7XKSA1 datasheet, IKW50N65ET7XKSA1 pinout, IKW50N65ET7XKSA1 application, or IKW50N65ET7XKSA1 equivalent, key selection criteria include its low turn-off energy (E_off = 0.85 mJ @ 50 A), soft diode recovery (t_rr = 93 ns, Q_rr = 1.05 µC), and JEDEC-qualified industrial reliability.

Technical Context

This IGBT7 Duopack integrates a field-stop trench-gate IGBT and an optimized soft-recovery diode in a single PG-TO247-3 package. Its gate threshold voltage (V_GE(th) = 4.3–5.7 V) enables robust noise immunity, while low C_res (31 pF) and high g_fs (26 S) support precise switching control under varying junction temperatures up to 175 °C.

The device operates with clamped inductive load conditions (V_CC ≤ 400 V, L = 80 µH, R_G = 9 Ω), delivering low total switching energy (E_ts = 2.05 mJ @ 50 A, 25 °C) and minimal tail current - critical for reducing EMI and thermal stress in servo and UPS applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports DC bus voltages up to 400 V in 3-phase inverters with 1.6× safety margin.
I_C	50 A continuous - rated for sustained conduction at T_c = 100 °C, enabling compact heatsink design.
V_CE(sat)	1.65 V @ 50 A, 25 °C - reduces conduction loss by ~15% vs. prior-gen IGBTs, improving system efficiency.
E_off	0.85 mJ @ 50 A, 400 V - lowers switching loss during turn-off, easing thermal management in high-frequency SMPS.
t_rr / Q_rr	93 ns / 1.05 µC @ 50 A - minimizes diode reverse recovery stress and associated voltage overshoot.
T_vj(max)	175 °C - extends operational lifetime in high-ambient industrial environments without derating.
R_th(j-c) (IGBT)	0.55 K/W - enables direct mounting to heatsinks with predictable thermal resistance for power stage modeling.

Pinout & Package

IKW50N65ET7XKSA1 uses the PG-TO247-3 package with isolated collector tab (backside), standard through-hole mounting, and M3 screw compatibility (max torque 0.6 Nm). Thermal resistance R_th(j-c) = 0.55 K/W (IGBT) and 0.8 K/W (diode) are measured per JEDEC JESD51-14.

Pin/Terminal	Circuit Role	Design Meaning
C (pin + backside)	Collector (IGBT) / Cathode (diode)	High-side power node; backside metal provides low-inductance, low-resistance collector connection.
E	Emitter (IGBT) / Anode (diode)	Common emitter-anode node; serves as return path for both IGBT and diode currents.
G	Gate (IGBT only)	Control terminal for IGBT; no gate connection for integrated diode - fully unidirectional control.

Key Features

Feature	Design Value
Low-loss IGBT7 architecture	Trench+fieldstop design achieves 1.65 V V_CE(sat) and 0.85 mJ E_off, reducing total power loss in 16–20 kHz motor drives.
Ultra-soft fast-recovery diode	t_rr = 93 ns, Q_rr = 1.05 µC, and low Irrm (21 A) suppress voltage spikes and EMI during commutation.
Short-circuit ruggedness	5 µs withstand time at V_CC ≤ 330 V and T_vj = 100 °C - supports reliable protection in servo amplifier fault conditions.
JEDEC industrial qualification	Validated per JEDEC47/20/22 for temperature cycling, HAST, and bondwire integrity - ensures long-term reliability in harsh environments.
Pb-free & RoHS compliant	Lead plating meets RoHS Directive 2011/65/EU; compatible with lead-free reflow and wave soldering (260 °C, 10 s).

Applications

Servo Drives

Industrial UPS

Use Scenario: High-bandwidth position control in CNC machines and robotic arms using 3-phase 20 kHz PWM inverters.

IC Role / Device Role / Timing Role: IGBT7 switch and anti-parallel freewheeling diode in half-bridge leg; handles bidirectional reactive current with minimal recovery loss.

Use Value: Soft diode recovery (t_rr = 93 ns) prevents shoot-through risk during dead-time transitions, improving system stability.

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz output from rectified AC or battery DC input.

IC Role / Device Role / Timing Role: Inverter-stage switching element in 3-level or 2-level topologies; conducts 50 A RMS with <1.7 V conduction drop.

Use Value: 175 °C T_vj(max) allows operation at elevated ambient temperatures without forced cooling, reducing fan count and acoustic noise.

Solar String Inverters

Industrial SMPS

Use Scenario: DC-AC conversion in distributed photovoltaic systems with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: Main switching device in full-bridge or H-bridge inverter stage; switches at 16–25 kHz with low E_ts.

Use Value: Low total switching energy (E_ts = 2.05 mJ) directly improves conversion efficiency above 98.5% at 5 kW scale.

Use Scenario: Primary-side switching in high-power telecom rectifiers and industrial DC supplies operating at 100–200 kHz.

IC Role / Device Role / Timing Role: Hard-switched IGBT in resonant or phase-shifted ZVS topologies; leverages low C_res (31 pF) for reduced gate drive loss.

Use Value: Input capacitance (C_ies = 3050 pF) enables stable gate drive design with standard 9 Ω resistors, minimizing layout sensitivity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT+diode power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ET7	Lower I_C rating (40 A vs. 50 A); identical V_CE, V_CE(sat), and diode specs; 10% lower E_off due to smaller die.	Optimized for 3–4 kW servo drives where peak current stays below 40 A; less margin for overload transients.	Select when thermal budget permits smaller conduction rating and system cost sensitivity outweighs headroom needs.
IKW50N65ES7	Same 50 A/650 V rating but uses older IGBT4 technology; V_CE(sat) = 1.85 V (25 °C); E_off = 1.35 mJ - 59% higher than ET7.	Suitable for lower-frequency (<10 kHz) industrial drives where switching loss is secondary to conduction loss.	Choose only if legacy design reuse or qualification continuity is required; avoid for new high-efficiency designs.

Compared with IKW40N65ET7 and IKW50N65ES7, IKW50N65ET7 delivers optimal balance of conduction margin (50 A), switching efficiency (0.85 mJ E_off), and diode softness - making it the preferred choice for new 16–25 kHz industrial inverter designs requiring >98% efficiency.

Availability

IKW50N65ET7XKSA1 is available at Aetrix Electronics and suitable for servo drives, industrial UPS systems, and solar string inverters requiring stable component supply, long lifecycle support, and traceable sourcing from Infineon's qualified production line.

Supply support for IKW50N65ET7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW50N65ET7XKSA1 belongs to the IGBT7 Duopack product line, engineered specifically for high-efficiency, high-reliability industrial motor drives and solar inverters demanding low conduction and switching losses at 175 °C junction operation.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G(on) = R_G(off) = 9 Ω for dynamic characterization. For robust operation, Infineon recommends R_G between 5 Ω and 15 Ω depending on dV/dt requirements and EMI constraints. Values above 15 Ω increase switching time and energy loss; below 5 Ω may cause gate oscillation or excessive peak current.

Can IKW50N65ET7XKSA1 be used in parallel configurations?

Yes - its positive V_CE(sat) temperature coefficient (increases with T_vj) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors. Derating to 80% of rated current per device is advised for thermal margin.

Is the integrated diode suitable for synchronous rectification?

No - the anti-parallel diode is optimized for freewheeling and reverse recovery, not controlled conduction. It lacks a gate terminal and cannot be actively turned on/off. For synchronous rectification, discrete MOSFETs or dedicated SR controllers must be used externally.

What is the meaning of "Duopack" in this part number?

"Duopack" denotes a monolithic integration of one IGBT and one optimized fast-recovery diode in a single TO-247-3 package. Both devices share the same thermal substrate and electrical isolation, eliminating discrete assembly complexity while ensuring matched thermal and dynamic behavior.

IKW50N65ET7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 50 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 50A

Power - Max:: 273 W

Switching Energy:: 1.2mJ (on), 850µJ (off)

Input Type:: Standard

Gate Charge:: 290 nC

Td (on/off) @ 25°C:: 26ns/350ns

Test Condition:: 400V, 50A, 9Ohm, 15V

Reverse Recovery Time (trr):: 93 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW50N65ET7XKSA1 FAQ

1.How can I place an order for IKW50N65ET7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N65ET7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N65ET7XKSA1 reliable?

The price and inventory of IKW50N65ET7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N65ET7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N65ET7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N65ET7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N65ET7XKSA1?

IKW50N65ET7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N65ET7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N65ET7XKSA1?

For technical support, including IKW50N65ET7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N65ET7XKSA1 requirements.

6.How does Aetrix verify that IKW50N65ET7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N65ET7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N65ET7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N65ET7XKSA1?

All IKW50N65ET7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N65ET7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N65ET7XKSA1 part is unused and in its original packaging.

Return procedure for IKW50N65ET7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…