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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N65F5AXKSA1

Name: IKW50N65F5AXKSA1
Brand: Infineon Technologies
SKU: IKW50N65F5AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW50N65F5AXKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N65F5AXKSA1.pdf

Description:: IGBT 650V 80A 305W PG-TO247-3

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Product details

Overview

IKW50N65F5AXKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers low V_CE(sat) of 1.66 V at 25°C and 50 A, 108 nC gate charge, and 175°C maximum junction temperature. Designed for hard-switching and resonant DC/DC converters and battery chargers, it enables high-efficiency power conversion with reduced switching losses.

For engineers reviewing the IKW50N65F5AXKSA1 datasheet, IKW50N65F5AXKSA1 pinout, IKW50N65F5AXKSA1 application, or IKW50N65F5AXKSA1 equivalent, key selection criteria include its 650 V blocking voltage, 1.66 V V_CE(sat), 108 nC Q_G, 77 ns diode t_rr at 25°C, and PG-TO247-3 thermal performance with R_th(j-c) = 0.55 K/W (IGBT) and 1.50 K/W (diode).

Technical Context

This DuoPack device integrates a fifth-generation trench-gate field-stop IGBT and a soft-recovery RAPID 1 diode on a single die substrate, enabling optimized commutation behavior and minimized tail current. Its gate structure reduces Q_G and E_off, while the diode's low Q_rr (0.68 µC) and controlled dI_rr/dt (–258 A/µs) suppress voltage overshoot during turn-off.

The device operates across –40°C to +175°C junction temperature, qualified per AEC-Q101, and supports gate drive with ±20 V steady-state and ±30 V transient V_GE. Thermal design leverages separate IGBT/diode R_th(j-c) values and backside collector mounting for low-inductance PCB layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - Enables use in 400 V DC bus systems with 50% voltage margin for transients and ringing.
I_C cont @ T_C=25°C	50 A - Rated continuous collector current under standard heatsink conditions.
V_CE(sat) @ 50 A, 25°C	1.66 V - Low conduction loss improves efficiency in high-current, medium-voltage applications.
Q_G	108 nC - Enables fast, low-loss switching with moderate gate driver strength (e.g., 2–4 A peak).
t_rr (diode) @ 25°C	77 ns - Fast, soft recovery minimizes voltage spikes and EMI in synchronous rectification.
R_th(j-c) (IGBT)	0.55 K/W - Supports high-power dissipation with direct case-to-heatsink thermal path.
T_vj(max)	175°C - Allows operation in high-ambient industrial environments without derating penalties.

Pinout & Package

Package: PG-TO247-3 - Through-hole, isolated-mount power package with insulated tab, rated for high thermal and mechanical reliability in industrial power modules and discrete designs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for IGBT turn-on/turn-off; requires low-impedance gate driver and <100 nH loop inductance.
Pin 2 & Backside	Collector	Main high-side power terminal; electrically connected to metal tab for low-inductance, high-current return path.
Pin 3	Emiter	Emitter reference for gate drive and current sensing; common node for IGBT and diode cathode connection.

Key Features

Feature	Design Value
TRENCHSTOP™ 5 IGBT technology	Reduces switching energy (E_ts = 0.63 mJ @ 25°C, 25 A) and tail current vs. prior generations.
RAPID 1 antiparallel diode	Delivers soft reverse recovery (Q_rr = 0.68 µC, t_rr = 77 ns) to limit dv/dt stress and snubber requirements.
AEC-Q101 qualification	Validates robustness for automotive-grade reliability in industrial and transportation applications.
Green RoHS-compliant package	Meets EU Directive 2011/65/EU with lead-free terminations and halogen-free molding compound.

Applications

Battery Charger

DC/DC Converter

Use Scenario: On-board charger (OBC) for EVs converting AC grid to 400 V DC battery bus.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology operating at 50–100 kHz.

Use Value: Low E_off (0.14 mJ) and soft diode recovery reduce switching losses and EMI, enabling compact magnetics and passive filtering.

Use Scenario: Isolated bidirectional DC/DC stage in energy storage systems (ESS), interfacing 48 V LV and 800 V HV buses.

IC Role / Device Role / Timing Role: Primary-side IGBT in dual-active-bridge (DAB) converter with ZVS-assisted soft switching.

Use Value: 175°C T_vj(max) and low R_th(j-c) support high-power density without forced air cooling.

Industrial Motor Drive

UPS Inverter Stage

Use Scenario: 3-phase inverter for HVAC compressors and pumps operating at 20–16 kHz PWM.

IC Role / Device Role / Timing Role: Upper-leg switch in 6-pack configuration driving motor windings with regenerative braking.

Use Value: Copacked diode handles reverse current during freewheeling with minimal reverse recovery loss and voltage overshoot.

Use Scenario: Online double-conversion UPS delivering clean 230 V AC output from 400 V DC bus during mains failure.

IC Role / Device Role / Timing Role: Output H-bridge IGBT in sinusoidal PWM inverter stage.

Use Value: 650 V rating and 150 A pulsed current capability ensure margin against line surges and overload transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT + diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65F5XKSA1	40 A rated current, lower I_C and E_on (0.39 mJ), identical V_CE, Q_G, and package.	Suitable for lower-power (<3 kW) battery chargers where thermal headroom is constrained.	Select when system peak current stays below 40 A and cost optimization is prioritized over headroom.
IKW50N65ES5XKSA1	Same 50 A/650 V rating but uses TRENCHSTOP™ 5 Enhanced Speed (ES5) with higher Q_G (125 nC) and slower t_d(off) (195 ns).	Better suited for ZVS topologies where gate charge tolerance is less critical than diode softness.	Prefer for resonant LLC or phase-shifted ZVS designs where diode recovery is more critical than gate drive loss.

Compared with IKW40N65F5XKSA1 and IKW50N65ES5XKSA1, IKW50N65F5AXKSA1 offers the best balance of conduction loss (1.66 V), switching speed (156 ns t_d(off)), and diode softness (77 ns t_rr) for hard-switched 5–10 kW industrial converters requiring high efficiency and low EMI.

Availability

IKW50N65F5AXKSA1 is available at Aetrix Electronics and suitable for battery chargers, DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IKW50N65F5AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ 5 High-Speed Switching series, engineered specifically for high-frequency, high-efficiency power conversion in battery charging, UPS, and solar inverters where low switching loss and soft recovery are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 12 Ω gate resistor is validated in the datasheet for 50 A switching at 400 V bus. Using >15 Ω increases turn-off delay and E_off; <8 Ω risks gate oscillation due to stray inductance. For 100 kHz operation, 10–12 Ω balances speed and stability with standard 2 A gate drivers.

Is the backside collector electrically isolated from the package tab?

No - Pin 2 and the metal backside are internally connected to the IGBT collector and form a single high-current, low-inductance terminal. The TO247-3 package has an insulated tab only in variants marked "IS" (e.g., IKW50N65F5AIS); this part (XKSA1) uses a conductive tab requiring electrical isolation via insulating washer or thermal pad.

Can this IGBT be used in parallel configurations?

Yes - its positive V_GE(th) temperature coefficient (4.0 V typ. at 25°C, increasing to 4.8 V at 175°C) ensures current sharing stability. Parallel operation requires matched gate drive loops, symmetrical PCB layout, and individual emitter resistors (0.1 Ω) for dynamic balancing per Infineon AN2015-05.

Does the RAPID 1 diode support bidirectional current flow in synchronous rectification?

Yes - the antiparallel diode conducts forward current up to 40 A (T_C = 25°C) and recovers with softness (dI_rr/dt = –258 A/µs) and low Q_rr (0.68 µC), making it suitable for synchronous rectification in LLC and phase-shifted full-bridge topologies where reverse recovery stress must be minimized.

IKW50N65F5AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 270 W

Switching Energy:: 490µJ (on), 140µJ (off)

Input Type:: Standard

Gate Charge:: 108 nC

Td (on/off) @ 25°C:: 21ns/156ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: 77 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW50N65F5AXKSA1 FAQ

1.How can I place an order for IKW50N65F5AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N65F5AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N65F5AXKSA1 reliable?

The price and inventory of IKW50N65F5AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N65F5AXKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N65F5AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N65F5AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N65F5AXKSA1?

IKW50N65F5AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N65F5AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N65F5AXKSA1?

For technical support, including IKW50N65F5AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N65F5AXKSA1 requirements.

6.How does Aetrix verify that IKW50N65F5AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N65F5AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N65F5AXKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N65F5AXKSA1?

All IKW50N65F5AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N65F5AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N65F5AXKSA1 part is unused and in its original packaging.

Return procedure for IKW50N65F5AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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