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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N65F5FKSA1

Name: IKW50N65F5FKSA1
Brand: Infineon Technologies
SKU: IKW50N65F5FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW50N65F5FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N65F5FKSA1.pdf

Description:: IGBT 650V 80A 305W PG-TO247-3

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Product details

Overview

IKW50N65F5FKSA1 from Infineon is a 650V, 50A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers 1.6V V_CE(sat) at 50A and 25°C, 120nC gate charge, and operates up to 175°C junction temperature. Designed for hard-switching and resonant topologies in solar converters and UPS systems.

For engineers reviewing the IKW50N65F5FKSA1 datasheet, IKW50N65F5FKSA1 pinout, IKW50N65F5FKSA1 application, or IKW50N65F5FKSA1 equivalent, key selection criteria include V_CE(sat) at rated current, Q_G, t_d(off)/t_f at 25°C and 150°C, diode Q_rr and t_rr, and thermal resistance R_th(j-c) for IGBT and diode separately.

Technical Context

This DuoPack device integrates an IGBT and antiparallel diode in a single TO-247-3 housing with shared thermal path. The IGBT uses TRENCHSTOP™ 5 trench-gate field-stop structure optimized for low conduction and switching losses simultaneously, while the diode employs RAPID 1 technology for soft reverse recovery and low Q_rr.

Switching performance is characterized across operating conditions: at 25°C/25A, E_on = 0.49 mJ and E_off = 0.16 mJ; at 150°C/25A, E_on = 0.68 mJ and E_off = 0.21 mJ. Diode t_rr ranges from 32 ns (6A, 25°C) to 81 ns (25A, 150°C), with Q_rr from 0.26 µC to 1.24 µC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Maximum blocking voltage for DC-link applications up to 400 V bus
I_C	50 A - Continuous collector current rating at T_C = 25°C, derated to 56 A at T_C = 100°C
V_CE(sat)	1.6 V - Low saturation voltage reduces conduction loss at full load
Q_G	120 nC - Gate charge determines driver strength requirement and switching speed control
R_th(j-c) (IGBT)	0.50 K/W - Enables 305 W power dissipation at T_C = 25°C with minimal ΔT
t_d(off)	175 ns - Turn-off delay time at 25°C/25A defines minimum dead-time margin
Q_rr (diode)	0.55 µC - Reverse recovery charge directly impacts turn-on loss of paired switch

Pinout & Package

PG-TO247-3 package with isolated mounting screw hole and backside collector metallization. Pin 1 = gate, Pin 2 = collector (also connected to backside metal tab), Pin 3 = emitter.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for IGBT channel; requires ±20 V max drive voltage
Pin 2 & Backside	Collector	Main high-side power terminal; electrically and thermally tied to case for low-inductance layout
Pin 3	Emiter	Low-side reference for IGBT and cathode connection for integrated diode

Key Features

Feature	Design Value
TRENCHSTOP™ 5 IGBT + RAPID 1 diode co-packaging	Single-package integration eliminates external diode layout parasitics and ensures matched thermal behavior
175°C maximum junction temperature	Enables higher power density and extended lifetime under high ambient or transient overload conditions
Soft reverse recovery (diode)	Reduces voltage overshoot and EMI during commutation, critical for high-frequency inverters
JEDEC-qualified reliability	Validated for industrial power control applications including solar and UPS with defined lifetime models

Applications

Solar Inverters

Uninterruptible Power Supplies

Use Scenario: Three-phase string inverters converting DC from PV arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 16–50 kHz PWM with low conduction and switching loss trade-off.

Use Value: 1.6 V V_CE(sat) and 0.55 µC Q_rr reduce thermal stress and improve efficiency >98.5% at 50% load.

Use Scenario: Online double-conversion UPS systems providing seamless backup during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch enabling bidirectional energy flow between battery bank and AC output.

Use Value: 175°C T_vjmax supports continuous operation under sustained overload and high ambient temperatures.

Industrial Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: IGBT-based inverter modules delivering 1–100 kHz square-wave output to welding transformers.

IC Role / Device Role / Timing Role: Primary hard-switched power switch; subjected to repetitive short-circuit events and high di/dt.

Use Value: 150 A pulsed collector current rating and robust SOA support arc ignition and short-circuit withstand capability.

Use Scenario: Resonant tank inverters operating at 20–100 kHz for contactless heating of metallic parts.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted main switch; relies on fast, soft diode recovery to minimize turn-on loss.

Use Value: RAPID 1 diode's 32 ns t_rr at 6A enables reliable ZVS across wide load range without snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT+diode DuoPack applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65F5	Lower I_C (40 A), same V_CE, slightly lower Q_G (105 nC), identical R_th(j-c)	Targeted at 3–5 kW systems where thermal margin allows downsizing	Select when system peak current ≤ 40 A and board space or cost optimization is prioritized over headroom
IKW50N65ES5	Same I_C/V_CE, but ES5 generation: higher V_CE(sat) (1.75 V), lower Q_G (95 nC), no integrated diode	Requires external diode selection; suited for designs needing independent diode optimization	Choose only if discrete diode placement is mandatory and higher conduction loss is acceptable for reduced gate drive demand

Compared with IKW40N65F5 and IKW50N65ES5, IKW50N65F5FKSA1 uniquely combines 50 A rating, 1.6 V V_CE(sat), integrated RAPID 1 diode, and 0.50 K/W R_th(j-c)-making it optimal for compact, high-efficiency 5–10 kW industrial inverters where thermal coupling and layout simplicity are critical.

Availability

IKW50N65F5FKSA1 is available at Aetrix Electronics and suitable for solar inverters, uninterruptible power supplies, and industrial welding converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IKW50N65F5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 High Speed Switching series targets high-efficiency, high-frequency power conversion systems where simultaneous optimization of conduction and switching losses is essential.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off at 150°C junction temperature?

At T_vj = 150°C and I_C = 25 A, the datasheet specifies t_d(off) = 202 ns and t_f = 3 ns with R_G(off) = 12 Ω. Increasing R_G(off) beyond 15 Ω risks exceeding safe SOA limits due to prolonged tail current; 10–12 Ω is the validated range for robust hard-switching operation across temperature.

Does the integrated diode share the same thermal resistance as the IGBT die?

No. The datasheet specifies separate thermal resistances: R_th(j-c) = 0.50 K/W for the IGBT and 1.50 K/W for the diode. This reflects different die sizes and thermal interface paths within the DuoPack, requiring independent thermal modeling for each element's power loss contribution.

Can IKW50N65F5FKSA1 be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate drive impedance, Kelvin emitter connections, and identical thermal mounting pressure per device. The positive V_GE(th) temperature coefficient (4.0 V typ. at 25°C, increasing to ~4.4 V at 175°C) supports current sharing, provided dynamic imbalances from stray inductance are minimized.

Is the backside collector electrically isolated from the mounting screw?

No. The backside collector metallization is directly connected to Pin 2 and is not insulated. Mounting must use an electrically conductive thermal interface (e.g., solder or conductive grease) onto an isolated heatsink, or a non-conductive thermal pad if the heatsink is grounded, to prevent short circuits.

IKW50N65F5FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 305 W

Switching Energy:: 490µJ (on), 160µJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 21ns/175ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: 52 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW50N65F5FKSA1 FAQ

1.How can I place an order for IKW50N65F5FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N65F5FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N65F5FKSA1 reliable?

The price and inventory of IKW50N65F5FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N65F5FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N65F5FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N65F5FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N65F5FKSA1?

IKW50N65F5FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N65F5FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N65F5FKSA1?

For technical support, including IKW50N65F5FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N65F5FKSA1 requirements.

6.How does Aetrix verify that IKW50N65F5FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N65F5FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N65F5FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N65F5FKSA1?

All IKW50N65F5FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N65F5FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N65F5FKSA1 part is unused and in its original packaging.

Return procedure for IKW50N65F5FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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