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Infineon Technologies IKW50N65H5AXKSA1

Part No.:
IKW50N65H5AXKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKW50N65H5AXKSA1.pdf
Description:
IGBT 650V 80A 305W PG-TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,786

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Product details

Overview

IKW50N65H5AXKSA1 from Infineon is a 650V, 50A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers 1.66V VCE(sat) at 50A/25°C, 116nC gate charge, and 175°C max junction temperature, enabling high-efficiency hard-switching and resonant topologies in industrial power converters.

For engineers reviewing the IKW50N65H5AXKSA1 datasheet, IKW50N65H5AXKSA1 pinout, IKW50N65H5AXKSA1 application, or IKW50N65H5AXKSA1 equivalent, key selection criteria include its low switching energy (0.14–0.85mJ), soft diode recovery (Qrr = 0.26–1.03µC), and AEC-Q101 qualification for rugged industrial deployment.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology optimized for high-speed switching with minimized tail current and reduced Eoff. Its integrated RAPID 1 diode features low Qrr, soft reverse recovery (dIrr/dt ≤ –1380 A/µs), and low VF (1.50–1.54V), reducing system losses in bidirectional energy transfer.

The device operates across –40°C to +175°C junction range with 0.55 K/W IGBT and 1.50 K/W diode junction-to-case thermal resistance. Gate threshold voltage is tightly specified (3.2–4.8V), ensuring robust noise immunity and predictable turn-on behavior under varying drive conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating650V - supports 400V DC-link systems with ≥1.6× safety margin for transient overvoltage
IC Continuous50A @ TC = 25°C - rated for sustained conduction in high-power DC/DC stages
VCE(sat)1.66V @ 50A/25°C - reduces conduction loss by ~25% vs. prior-gen H3 devices at same current
QG116nC - enables efficient 15V gate drive with moderate RG values (e.g., 12Ω) for balanced switching speed
Eoff0.04–0.24mJ - low turn-off loss supports >100kHz operation in ZVS/ZCS topologies
trr / Qrr31–85ns / 0.26–1.03µC - soft recovery minimizes voltage overshoot and EMI in freewheeling paths
Tvj(max)175°C - allows higher power density and derating headroom in thermally constrained enclosures

Pinout & Package

PG-TO247-3 package with isolated collector tab (backside), standard through-hole mounting, and 0.6 Nm M3 screw torque rating. Thermal path optimized via direct collector-to-heatsink interface.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal requiring 15V ±10% drive; 116nC total charge dictates gate driver peak current capability
Pin 2 & BacksideCollectorMain high-side power terminal; backside metal provides low-inductance, low-thermal-resistance path to heatsink
Pin 3EmitterPower return and reference for gate drive; internal emitter inductance is 13nH (5mm from case)

Key Features

FeatureDesign Value
TRENCHSTOP™ 5 IGBT + RAPID 1 Diode DuoPackSingle-package integration eliminates layout parasitics between switch and freewheeling diode, improving EMI and reliability
Low VCE(sat) and QGEnables high efficiency at 50A while reducing gate driver power and heat sink size requirements
AEC-Q101 QualifiedValidated for automotive-grade stress testing (HTGB, HTRB, TC), supporting industrial applications demanding long-term reliability
RoHS-compliant Green PackageMeets EU environmental directives without compromising thermal or electrical performance

Applications

Battery ChargerIndustrial DC/DC Converter

Use Scenario: Bidirectional on-board charger (OBC) in EV/ESS systems operating at 400V DC-link and 10–100kHz switching.

IC Role / Device Role / Timing Role: Main switching device in phase-shifted full-bridge topology; handles both AC/DC rectification and DC/DC isolation.

Use Value: Low Qrr and soft recovery reduce diode-induced voltage spikes during zero-voltage switching transitions, improving MOSFET/IGBT lifetime.

Use Scenario: High-efficiency 3kW telecom or server PSU with LLC resonant converter stage.

IC Role / Device Role / Timing Role: Primary-side switch in half-bridge configuration; synchronized with resonant tank for ZVS turn-on.

Use Value: 0.14mJ Eon at 6A enables high-frequency operation (>150kHz) without excessive switching loss penalty.

Solar Inverter MPPT StageMotor Drive Inverter Module

Use Scenario: DC/DC boost stage in string inverters converting 600–1000V PV input to 1200V DC bus.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost converter; operated at 20–50kHz with unidirectional current flow.

Use Value: 175°C Tvj(max) and 0.55 K/W Rth(j-c) allow compact heatsinking in outdoor-rated enclosures with wide ambient range.

Use Scenario: 7.5kW servo drive inverter output stage delivering 50A RMS to PMSM motor.

IC Role / Device Role / Timing Role: Phase-leg switch in 6-pack configuration; driven with dead-time-controlled PWM at 8–16kHz.

Use Value: Tight VGE(th) distribution (3.2–4.8V) ensures consistent channel turn-on across parallel devices, minimizing current imbalance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT + diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N65H540A rated current, identical VCE, VCE(sat), and QG; lower IC and Ptot (220W vs. 270W)Targeted at 2–3kW systems; less thermal margin in high-duty-cycle operationSelect when system peak current stays below 40A and board space or cost optimization is prioritized
FGH40N60UF600V rating, 40A, older UFT technology; higher VCE(sat) (1.8V), slower trr (100ns), no AEC-Q101Legacy industrial designs where 650V margin is not required and qualification is not mandatedChoose only for drop-in replacement in existing 600V designs with relaxed efficiency and reliability targets

Compared with IKW40N65H5 and FGH40N60UF, IKW50N65H5AXKSA1 offers superior power handling (50A/270W), best-in-class softness (Qrr < 1.03µC), and automotive-grade qualification-making it optimal for new 4–7kW industrial and renewable energy designs demanding longevity and high efficiency.

Availability

IKW50N65H5AXKSA1 is available at Aetrix Electronics and suitable for battery chargers, industrial DC/DC converters, solar inverter MPPT stages, and motor drive inverter modules requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for IKW50N65H5AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's TRENCHSTOP™ 5 High-Speed Switching series, engineered specifically for high-efficiency, high-reliability industrial power conversion where low switching loss, soft recovery, and extended temperature operation are critical.

FAQ

What is the maximum recommended gate-emitter voltage for continuous operation?

The absolute maximum continuous gate-emitter voltage is ±20V. Transient peaks up to ±30V (≤10µs, duty cycle < 1%) are permitted per datasheet Section 4. Exceeding these limits risks permanent gate oxide damage, especially at elevated temperatures. A 15V nominal drive with clamping protection is standard practice.

Can IKW50N65H5AXKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of VCE(sat) and tight VGE(th) distribution (3.2–4.8V) enable stable current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling. Derating to 45A per device is recommended for 2-unit parallel operation at 100°C case temperature.

Is the RAPID 1 diode in this DuoPack optimized for reverse recovery or forward conduction?

The RAPID 1 diode is co-optimized for both: it achieves low forward voltage (1.50–1.54V) at 25A while maintaining soft, low-charge reverse recovery (Qrr = 0.26–1.03µC). This dual optimization reduces conduction loss during freewheeling and minimizes voltage overshoot and EMI during turn-off transitions in hard-switched topologies.

Does this part require a negative gate voltage for reliable turn-off?

No-reliable turn-off is achieved with 0V gate drive due to its low leakage (ICES = 40µA @ 175°C) and robust threshold margin. However, applying –5V to –10V improves noise immunity in high-dV/dt environments and accelerates turn-off, particularly in multi-kW systems with long gate traces or shared ground paths.

IKW50N65H5AXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
80 A
Current - Collector Pulsed (Icm):
150 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 50A
Power - Max:
270 W
Switching Energy:
450µJ (on), 160µJ (off)
Input Type:
Standard
Gate Charge:
116 nC
Td (on/off) @ 25°C:
21ns/173ns
Test Condition:
400V, 25A, 12Ohm, 15V
Reverse Recovery Time (trr):
58 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3

IKW50N65H5AXKSA1 FAQ

1.How can I place an order for IKW50N65H5AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N65H5AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N65H5AXKSA1 reliable?

The price and inventory of IKW50N65H5AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N65H5AXKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N65H5AXKSA1 transactions.

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IKW50N65H5AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N65H5AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N65H5AXKSA1?

For technical support, including IKW50N65H5AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N65H5AXKSA1 requirements.

6.How does Aetrix verify that IKW50N65H5AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N65H5AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N65H5AXKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N65H5AXKSA1?

All IKW50N65H5AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N65H5AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N65H5AXKSA1 part is unused and in its original packaging.

Return procedure for IKW50N65H5AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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