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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N65H5FKSA1

Name: IKW50N65H5FKSA1
Brand: Infineon Technologies
SKU: IKW50N65H5FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW50N65H5FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N65H5FKSA1.pdf

Description:: IGBT 650V 80A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IKW50N65H5FKSA1 from Infineon is a 650 V, 50 A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers 1.65 V V_CE(sat) at 50 A and 25°C, 120 nC total gate charge, and 175°C maximum junction temperature. Designed for hard-switching and resonant topologies in solar converters and UPS systems.

For engineers reviewing the IKW50N65H5FKSA1 datasheet, IKW50N65H5FKSA1 pinout, IKW50N65H5FKSA1 application, or IKW50N65H5FKSA1 equivalent, key selection criteria include V_CE(sat) stability across temperature, diode reverse recovery performance (Q_rr = 0.57 µC at 25°C), switching energy (E_off = 0.18 mJ), and thermal resistance (R_th(j–c) = 0.50 K/W).

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure optimized for low conduction and switching losses simultaneously. Its integrated RAPID 1 diode features soft reverse recovery (trr = 57 ns, dirr/dt = –415 A/µs) and low Q_rr, minimizing voltage overshoot and EMI in high-frequency inverters.

The device operates up to 175°C junction temperature with JEDEC-qualified reliability and supports gate drive with ±20 V steady-state and ±30 V transient ratings. Thermal design is enabled by separate IGBT and diode junction-to-case thermal resistances (0.50 K/W and 1.50 K/W respectively), critical for dual-device thermal modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in industrial inverters and UPS designs.
I_C	50 A - Rated continuous collector current at T_C = 25°C; derates to 56 A at T_C = 100°C.
V_CE(sat)	1.65 V @ 50 A, 25°C - Low saturation voltage reduces conduction loss and improves system efficiency.
Q_G	120 nC - Enables fast, low-loss switching with moderate gate driver power requirements.
E_off	0.18 mJ @ 400 V, 25 A, 25°C - Low turn-off energy supports high-frequency operation (e.g., >20 kHz in solar MPPT stages).
trr / Q_rr	57 ns / 0.57 µC @ 400 V, 25 A - Fast, soft diode recovery minimizes snubber stress and commutation losses.
R_th(j–c)	0.50 K/W (IGBT), 1.50 K/W (diode) - Enables accurate thermal simulation of individual die temperatures in DuoPack configuration.

Pinout & Package

PG-TO247-3 package: isolated metal tab (collector), three leads (gate, emitter, collector). Mounting torque: 0.6 N·m (M3 screw). RoHS-compliant, Pb-free plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	Controls IGBT conduction; requires 15 V nominal drive, ±20 V absolute max rating.
Pin 2 (center)	Emitter	Common reference node for gate drive and current sensing; connected to diode cathode internally.
Pin 3 (right)	Collector	High-side power terminal; electrically tied to diode anode; mounted to heatsink via isolated tab.

Key Features

Feature	Design Value
TRENCHSTOP™ 5 IGBT + RAPID 1 diode integration	DuoPack eliminates layout parasitics between switch and freewheeling diode, reducing voltage spikes and layout complexity.
175°C maximum junction temperature	Enables higher power density and extended lifetime in thermally constrained enclosures without derating.
Low V_CE(sat) drift over temperature	V_CE(sat) rises only to 1.95 V at 175°C - maintains efficiency stability across full operating range.
JEDEC-qualified reliability	Validated for industrial power applications per JESD47, supporting long-term field deployment in UPS and solar systems.
Soft, fast diode recovery	dirr/dt = –415 A/µs at 25°C - suppresses EMI generation during commutation, easing EMC filter design.

Applications

Solar String Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: DC–AC conversion stage in 5–15 kW string inverters with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: Main switching device in 3-phase inverter bridge; handles 16–20 kHz PWM with low conduction + switching loss balance.

Use Value: 1.65 V V_CE(sat) and 0.18 mJ E_off enable >98.5% peak efficiency while maintaining thermal margin at 60°C ambient.

Use Scenario: Online double-conversion UPS output stage delivering clean sine-wave AC under battery backup.

IC Role / Device Role / Timing Role: High-efficiency inverter switch in 3-phase output H-bridge; operates at 8–12 kHz with tight THD control.

Use Value: Soft RAPID 1 diode recovery (Q_rr = 0.57 µC) reduces output filter size and improves dynamic load response.

Industrial Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: Primary-side inverter in IGBT-based inverter welders delivering 100–500 A DC output with fast current regulation.

IC Role / Device Role / Timing Role: Hard-switched main switch handling 10–20 kHz burst-mode operation with high peak current pulses.

Use Value: 150 A pulsed collector current rating and 175°C T_vj support short-duration overload conditions without thermal shutdown.

Use Scenario: Resonant half-bridge inductor driver for 20–50 kHz induction heating systems in metal processing.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS)-assisted switch in series-resonant topology; relies on low C_oss (65 pF) and fast turn-on.

Use Value: 21 ns t_d(on) and 15 ns t_r at 25°C ensure precise timing control for ZVS window maintenance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + diode switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65H5	Lower I_C rating (40 A vs. 50 A); identical V_CE, V_CE(sat), and Q_G.	Suitable for 3–8 kW designs where thermal headroom allows lower current rating.	Select when system peak current stays ≤40 A and board space or cost optimization is prioritized.
IKW50N65ES5	Same 50 A/650 V rating but uses older TRENCHSTOP™ 4 + RAPID 2; higher V_CE(sat) (1.75 V) and E_off (0.25 mJ).	Higher conduction and switching losses limit use in high-efficiency or high-frequency (>15 kHz) designs.	Choose only for legacy redesigns requiring backward compatibility with existing thermal/mechanical layouts.

Compared with IKW40N65H5 and IKW50N65ES5, IKW50N65H5FKSA1 offers optimal trade-off between current capability, switching speed, and thermal robustness-enabling compact, high-efficiency 10–15 kW inverters without compromising reliability at 175°C.

Availability

IKW50N65H5FKSA1 is available at Aetrix Electronics and suitable for solar converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IKW50N65H5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW50N65H5FKSA1 belongs to Infineon's TRENCHSTOP™ 5 high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency industrial inverters demanding low loss, soft switching behavior, and rugged thermal performance.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 12 Ω for characterization at 25°C and 150°C. For safe operation, keep RG ≤ 22 Ω to maintain td(off) < 250 ns and prevent excessive E_off rise at elevated temperature. Higher values increase switching losses and risk shoot-through in bridge configurations.

Is the diode in IKW50N65H5FKSA1 suitable for synchronous rectification?

No-the integrated RAPID 1 diode is optimized for freewheeling and anti-parallel clamping, not synchronous rectification. Its forward voltage (1.45 V at 25°C) and recovery characteristics are not designed for active gate control; external MOSFETs are required for SR implementation.

Does IKW50N65H5FKSA1 require negative gate voltage for turn-off?

No-turn-off is fully achieved with 0 V gate-emitter bias. However, applying –5 V to –10 V during off-state improves noise immunity and prevents spurious turn-on in high-dV/dt environments such as motor drives or induction heaters.

Can IKW50N65H5FKSA1 replace older IKW50N65H3 in existing designs?

Yes-pin-compatible and functionally equivalent with improved V_CE(sat) (1.65 V vs. 1.70 V), lower E_off (0.18 mJ vs. 0.22 mJ), and enhanced diode softness. No layout or gate drive changes are needed; thermal design benefits from identical R_th(j–c).

IKW50N65H5FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 305 W

Switching Energy:: 520µJ (on), 180µJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 21ns/180ns

Test Condition:: 400V, 25A, 12Ohm, 15V

Reverse Recovery Time (trr):: 57 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW50N65H5FKSA1 FAQ

1.How can I place an order for IKW50N65H5FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N65H5FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N65H5FKSA1 reliable?

The price and inventory of IKW50N65H5FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N65H5FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N65H5FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N65H5FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N65H5FKSA1?

IKW50N65H5FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N65H5FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N65H5FKSA1?

For technical support, including IKW50N65H5FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N65H5FKSA1 requirements.

6.How does Aetrix verify that IKW50N65H5FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N65H5FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N65H5FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N65H5FKSA1?

All IKW50N65H5FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N65H5FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N65H5FKSA1 part is unused and in its original packaging.

Return procedure for IKW50N65H5FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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