Infineon Technologies IKW50N65SS5XKSA1

Overview

IKW50N65SS5XKSA1 from Infineon is a CoolSiC™ Hybrid Discrete combining a 650 V, 50 A TRENCHSTOP™ 5 IGBT with a co-packed full-rated 6th-generation CoolSiC™ Schottky diode in a single TO-247-3 package. It delivers ultra-low switching losses, low V_CE(sat) (1.35–1.65 V), and high thermal robustness (T_vjmax = 175 °C), enabling high-efficiency hard-switching operation in industrial power converters.

For engineers reviewing the IKW50N65SS5XKSA1 datasheet, IKW50N65SS5XKSA1 pinout, IKW50N65SS5XKSA1 application, or IKW50N65SS5XKSA1 equivalent, this hybrid discrete offers verified plug-and-play replacement for silicon IGBTs in SMPS, UPS, solar string inverters, and energy storage systems-without gate drive redesign or layout changes.

Technical Context

This hybrid device integrates two independently optimized semiconductor dies: a trench-gate field-stop IGBT with fast turn-off (t_d(off) = 140 ns @ 25 °C) and low tail current, and a SiC Schottky diode with zero reverse recovery charge (Q_rr = 0) and low forward voltage (V_F = 1.35–1.65 V). The co-packaged structure minimizes parasitic inductance (L_E = 13 nH) and enables synchronized thermal behavior.

The IGBT's transconductance (g_fs = 62 S) and gate charge (Q_G = 110 nC) support stable gate control under high dv/dt, while the diode's R_th(j-c) = 1 K/W and IGBT's R_th(j-c) = 0.55 K/W allow independent thermal modeling of each die within shared case constraints.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole TO-247 with isolated collector tab). Pin assignment validated per Infineon datasheet Rev. 1.10: Gate (G), Collector (C), Emitter (E); collector electrically connected to backside metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid IGBT-diode applications.

Compared with IKW40N65ES5, IKW50N65SS5XKSA1 provides 25% higher continuous current handling at identical voltage class and thermal resistance, making it optimal for 5–10 kW industrial converters. Versus FF50R12RT4, it retains compatibility with existing 15 V gate drivers and TO-247 footprints while delivering most SiC benefits without full SiC gate drive complexity.

Availability

IKW50N65SS5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, uninterruptible power supplies, and solar string inverters requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IKW50N65SS5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

The CoolSiC™ Hybrid Discrete product line targets high-efficiency industrial power conversion, merging silicon IGBT ruggedness with SiC diode performance to extend the lifetime and efficiency of hard-switched topologies without redesign.

FAQ

Is IKW50N65SS5XKSA1 pin-compatible with standard TO-247 IGBTs?

Yes. It uses the industry-standard PG-TO247-3 package with identical mechanical dimensions, mounting hole pattern, and pin assignment (G-C-E). The collector is electrically connected to the backside metal tab, matching conventional IGBT thermal and electrical interface requirements without PCB redesign.

What gate drive voltage is required for reliable operation?

A gate-emitter voltage of +15 V (±0.5 V) is recommended for full saturation and minimal V_CE(sat), with –5 V to –8 V negative turn-off bias advised to suppress false triggering. The device's V_GE(th) range (3.2–4.8 V) ensures noise immunity at standard 15 V drive levels.

Does the integrated CoolSiC™ diode eliminate the need for external snubbers?

In hard-switched topologies, the zero Q_rr and soft reverse recovery of the CoolSiC™ diode significantly reduce voltage overshoot and ringing, allowing elimination of RC snubbers in many 20–50 kHz designs. However, layout-dependent parasitics may still require minimal damping in high-di/dt applications (>5 kA/µs).

How does thermal management differ from a discrete IGBT + Si diode solution?

Because both dies share the same case and thermal path, junction temperatures track closely-enabling single-point case temperature monitoring for both devices. The IGBT's R_th(j-c) = 0.55 K/W and diode's R_th(j-c) = 1.0 K/W allow separate thermal modeling, but actual ΔT_j remains within 5 °C under balanced load conditions.