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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW50N65WR5XKSA1

Name: IKW50N65WR5XKSA1
Brand: Infineon Technologies
SKU: IKW50N65WR5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW50N65WR5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW50N65WR5XKSA1.pdf

Description:: IGBT TRENCH 650V 80A TO247-3

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Product details

Overview

IKW50N65WR5XKSA1 from Infineon is a reverse-conducting IGBT (RC-IGBT) with monolithic body diode, rated for 650 V collector-emitter voltage and 50 A continuous collector current at Tc = 130 °C. It features low VCEsat (1.4–1.8 V), low Eoff (0.22–0.32 mJ), and optimized diode for zero-current-switching (ZCS) topologies. Used in high-efficiency welding inverters and active PFC stages where compactness and thermal stability are critical.

For engineers reviewing the IKW50N65WR5XKSA1 datasheet, IKW50N65WR5XKSA1 pinout, IKW50N65WR5XKSA1 application, or IKW50N65WR5XKSA1 equivalent, key selection criteria include its positive temperature coefficient of VCEsat for stable paralleling, low diode reverse recovery charge (1.8–3.5 µC), rugged 175 °C junction rating, and PG-TO247-3 package compatibility with industrial heatsink mounting.

Technical Context

This RC-IGBT integrates a fast soft-recovery anti-parallel diode on the same die, eliminating external diode layout complexity and parasitic inductance. Its gate threshold voltage (3.2–4.8 V) and transconductance (65 S) support robust drive margin and linear control in hard-switched and resonant converters.

The device delivers low switching losses (Eon = 0.84–1.04 mJ, Eoff = 0.22–0.32 mJ) and exhibits minimal parameter drift over temperature - VCEsat increases only ~0.25 V from 25 °C to 175 °C, and trr extends from 110 ns to 145 ns - enabling predictable ZCS timing across full operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - Supports 400 V AC input PFC and 600 V DC bus systems with 15% safety margin.
I_C cont. @ T_c=130°C	50 A - Enables compact 5–10 kW inverter designs without forced air cooling.
V_CEsat @ 50 A, 15 V	1.4–1.8 V - Reduces conduction loss to <1.0 W at 50 A, improving thermal efficiency.
E_off @ 400 V, 25 A	0.22–0.32 mJ - Low turn-off energy enables >50 kHz operation in ZCS resonant converters.
Q_rr @ 25 A	1.8–3.5 µC - Soft, low-charge recovery minimizes diode-induced voltage spikes and EMI.
R_th(j-c) (IGBT)	0.53 K/W - Enables direct heatsink mounting with <1.5 °C/W total thermal resistance for 100 W dissipation.
T_vj max	175 °C - Rated for sustained operation in sealed industrial enclosures without derating.

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, 3-pin vertical lead frame). Mounting torque: 0.6 Nm (M3 screw); soldering temperature: 260 °C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC bus (+) in half-bridge; carries full load current and withstands 650 V blocking.
Gate (G)	Control input	Receives 15 V logic-level drive; input capacitance C_ies = 6140 pF requires ≥1 A peak gate driver capability.
Emitter (E)	Power return and reference node	Serves as common emitter for IGBT and cathode for integrated diode; low-inductance path critical for ZCS timing accuracy.

Key Features

Feature	Design Value
Monolithic RC structure	Integrated anti-parallel diode eliminates discrete diode placement error and layout-induced oscillation in ZCS circuits.
Positive V_CEsat tempco	Enables stable current sharing across parallel devices without external ballasting resistors or complex current sensing.
Low EMI signature	Soft diode recovery (trr = 110–145 ns) and low dV/dt during turn-off reduce conducted noise and filter component count.
JESD-022 qualification	Validated for industrial lifetime reliability under thermal cycling, humidity, and bias stress per JEDEC standards.
Pb-free & RoHS compliant	Meets global environmental compliance requirements for OEM production without exemption waivers or rework.

Applications

Welding Inverters

Active PFC Stages

Use Scenario: High-frequency (20–50 kHz) DC-link switching in IGBT-based inverter welders with dynamic load profiles.

IC Role / Device Role / Timing Role: Main switching device in half-bridge output stage; integrated diode handles freewheeling during ZCS transitions.

Use Value: Low Eoff and soft diode recovery reduce snubber losses and enable compact magnetic design without compromising arc stability.

Use Scenario: Three-phase or single-phase boost PFC in industrial UPS and EV chargers requiring >98% efficiency at full load.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost topology; monolithic diode conducts during dead-time and light-load conditions.

Use Value: 50 A rating and 0.53 K/W R_th(j-c) allow natural convection cooling in space-constrained front-end modules.

ZCS Resonant Converters

Induction Heating Systems

Use Scenario: Series-resonant LLC or phase-shifted full-bridge topologies operating near zero-current crossing for ultra-low EMI.

IC Role / Device Role / Timing Role: Primary switching element synchronized to resonant current zero-crossing; integrated diode provides controlled commutation path.

Use Value: Precise Q_rr (1.8–3.5 µC) and low dirr/dt (600–1200 A/µs) ensure repeatable ZCS timing across temperature and aging.

Use Scenario: Medium-frequency (20–100 kHz) resonant tank drivers in industrial metal heating and brazing equipment.

IC Role / Device Role / Timing Role: Half-bridge switch handling high di/dt (>1 kA/µs) and repetitive surge currents up to 150 A pulse.

Use Value: 175 °C T_vj max and rugged SOA support continuous 100% duty-cycle operation under thermal stress without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65WR5	Lower I_C rating (40 A @ T_c=130°C), identical V_CE, slightly higher V_CEsat (1.45–1.85 V).	Better suited for 3–6 kW PFC or welding modules with tighter thermal budgets.	Select when system peak current stays below 40 A and board space constraints favor smaller die size.
IKW50N65ES5	Standard IGBT + discrete diode (not monolithic); lower V_CEsat (1.35 V typ), but higher system-level EMI and layout complexity.	Preferred in cost-sensitive designs where layout control and EMI filtering are less critical.	Choose only if existing PCB layout already accommodates separate diode footprint and gate drive isolation is verified.

Compared with IKW40N65WR5 and IKW50N65ES5, IKW50N65WR5XKSA1 uniquely balances 50 A current capability, monolithic integration, and ZCS-optimized diode dynamics - making it the optimal choice for thermally dense, EMI-sensitive, and high-reliability resonant power conversion.

Availability

IKW50N65WR5XKSA1 is available at Aetrix Electronics and suitable for welding inverters, active PFC stages, and ZCS resonant converters requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IKW50N65WR5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The IKW series targets high-efficiency, high-reliability power conversion in industrial motor drives, welding, and renewable energy systems - designed specifically for ZCS and soft-switching topologies demanding integrated diode performance and thermal ruggedness.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 16 Ω for characterization. For 50 A operation at 25–50 kHz, a 10–15 Ω gate resistor is recommended to balance switching speed (minimizing Eon/Eoff) and gate oscillation risk. Higher values (>22 Ω) increase turn-on delay and may cause incomplete saturation at high junction temperatures.

Can IKW50N65WR5XKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of VCEsat ensures inherent current sharing across parallel devices. Designers must match gate drive loop inductance (<5 nH) and use Kelvin emitter connections to avoid imbalance. Thermal coupling via shared heatsink is strongly recommended for uniform Tvj distribution.

Does the integrated diode replace an external fast recovery diode in all cases?

Yes, for ZCS and resonant applications where soft recovery and low Qrr are critical. However, in hard-switched topologies with high di/dt or reverse voltage overshoot >650 V, external clamping or snubbing may still be required - verify using actual circuit waveforms and not just datasheet ratings.

What is the typical thermal resistance from junction to case for the IGBT portion?

The IGBT's Rth(j-c) is 0.53 K/W, measured under standard mounting conditions (0.6 Nm torque, flat heatsink surface, thermal interface material). This value applies only to the IGBT die - the diode portion has a separate Rth(j-c) of 2.29 K/W due to different thermal path geometry.

IKW50N65WR5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 1.8V @ 15V, 50A

Power - Max:: 282 W

Switching Energy:: 840µJ (on), 220µJ (off)

Input Type:: Standard

Gate Charge:: 230 nC

Td (on/off) @ 25°C:: 45ns/417ns

Test Condition:: 400V, 25A, 16Ohm, 15V

Reverse Recovery Time (trr):: 110 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW50N65WR5XKSA1 FAQ

1.How can I place an order for IKW50N65WR5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW50N65WR5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW50N65WR5XKSA1 reliable?

The price and inventory of IKW50N65WR5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW50N65WR5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW50N65WR5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW50N65WR5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW50N65WR5XKSA1?

IKW50N65WR5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW50N65WR5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW50N65WR5XKSA1?

For technical support, including IKW50N65WR5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW50N65WR5XKSA1 requirements.

6.How does Aetrix verify that IKW50N65WR5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW50N65WR5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW50N65WR5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW50N65WR5XKSA1?

All IKW50N65WR5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW50N65WR5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW50N65WR5XKSA1 part is unused and in its original packaging.

Return procedure for IKW50N65WR5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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