Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IKW60N60H3FKSA1

Part No.:
IKW60N60H3FKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKW60N60H3FKSA1.pdf
Description:
IGBT TRENCH FS 600V 80A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:216

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IKW60N60H3FKSA1 from Infineon is a 600 V, 60 A high-speed IGBT in Trench and Fieldstop technology with integrated soft-recovery anti-parallel diode, rated for 175 °C junction operation, 1.85 V VCE(sat) at 60 A/25 °C, and 3.23 mJ total switching energy at 25 °C - deployed in welding converters and UPS inverters requiring fast, low-loss switching.

For engineers reviewing the IKW60N60H3FKSA1 datasheet, IKW60N60H3FKSA1 pinout, IKW60N60H3FKSA1 application, or IKW60N60H3FKSA1 equivalent, key selection criteria include turn-off energy (1.13 mJ), diode reverse recovery time (143 ns), short-circuit withstand time (5 µs), thermal resistance RthJC (0.36 K/W), and PG-TO247-3 package compatibility.

Technical Context

This third-generation High Speed Switching Series IGBT uses TRENCHSTOP™ architecture to minimize tail current and EMI while maintaining low conduction loss. Its monolithic DuoPack integration pairs the IGBT with a soft, fast-recovery diode sharing the same die substrate and thermal path.

The device operates with gate-emitter threshold voltage of 4.1–5.7 V and exhibits strong temperature stability: VCE(sat) rises only to 2.25 V at 175 °C, and diode forward voltage remains ≤2.00 V under same conditions - enabling robust performance across industrial ambient ranges.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max600 V - supports DC bus voltages up to 400 V in hard-switched converters with margin for transients.
IC cont @ TC=115°C60 A - continuous collector current rating usable in forced-air-cooled industrial enclosures.
VCE(sat) @ 60 A, 25°C1.85 V - enables <111 W conduction loss at full load, reducing heatsink requirements.
Eoff @ 400 V, 60 A1.13 mJ - low turn-off energy permits >20 kHz switching in welding inverters without excessive loss.
trr (diode)143 ns - soft recovery minimizes voltage overshoot and snubber stress in bidirectional topologies.
RthJC0.36 K/W - allows direct mounting to heatsinks for efficient thermal management in compact power stages.
tsc withstand5 µs @ 150°C - supports reliable overcurrent protection in motor drives and UPS systems.

Pinout & Package

IKW60N60H3FKSA1 is housed in a PG-TO247-3 package with isolated mounting screw hole and backside collector terminal. The package provides low-inductance layout, 0.36 K/W junction-to-case thermal resistance, and RoHS-compliant, halogen-free molding compound.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl input requiring ±20 V rating; 375 nC total gate charge dictates driver strength requirement.
Pin 2 & BacksideCollectorMain high-side power terminal; electrically connected to metal tab for low-inductance, high-current return path.
Pin 3EmitterPower return and reference node; internal emitter inductance is 13 nH - critical for gate loop layout optimization.

Key Features

FeatureDesign Value
TRENCHSTOP™ IGBT + soft diode DuoPackMonolithic integration eliminates interconnect inductance and ensures matched thermal behavior between switch and freewheeling path.
175 °C maximum junction temperatureEnables operation in sealed, high-ambient environments (e.g., enclosed UPS cabinets) without derating below 60 A.
Low EMI due to controlled fall time (27 ns)Reduces need for external EMI filters in CE-compliant industrial equipment.
JEDEC-qualified reliabilityValidated for industrial power control applications including 1000+ short-circuit events with ≥1 s recovery intervals.
Pb-free, halogen-free constructionMeets RoHS Directive 2011/65/EU and IPC-J-STD-020 moisture sensitivity level 1 (MSL1).

Applications

Uninterruptible Power Supplies (UPS)Industrial Welding Converters

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine-wave output during grid failure.

IC Role / Device Role / Timing Role: Main inverter switch in three-phase IGBT bridge converting DC bus to AC output.

Use Value: 1.13 mJ Eoff and 143 ns trr enable 16–20 kHz PWM with <3% THD and minimal heatsink volume.

Use Scenario: Inverter-based arc welding machine with adjustable current/voltage control and digital waveform shaping.

IC Role / Device Role / Timing Role: Primary switching element in primary-side DC-link chopper controlling transformer input power.

Use Value: 5 µs short-circuit withstand time supports fast current limiting during arc initiation and stick-out events.

Solar Central InvertersMotor Drive Intermediate Stages

Use Scenario: 50–100 kW central photovoltaic inverter feeding utility grid via transformer-coupled H-bridge.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type multilevel topology handling 600 V DC link.

Use Value: 0.36 K/W RthJC and 60 A rating support parallel operation with <2 K thermal imbalance at full load.

Use Scenario: Medium-voltage variable frequency drive for HVAC compressors or pumps operating at 400–690 V AC input.

IC Role / Device Role / Timing Role: Output stage switch in 2-level or 3-level inverter driving induction motor windings.

Use Value: Soft diode recovery prevents voltage spikes during regenerative braking, eliminating need for external RC snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N60H3Lower IC rating (40 A), identical VCE, 0.95 mJ Eoff, same packageOptimized for 15–30 kW welders or smaller UPS units where peak current demand is lowerSelect when system thermal budget allows reduced conduction loss at partial load and cost reduction is prioritized.
FGH60N60SMD600 V/60 A, but TO-247-4L package with Kelvin emitter; 1.45 mJ Eoff; higher VCE(sat) (2.0 V)Designed for ultra-low-inductance gate drive in high-frequency resonant converters (>50 kHz)Prefer when precise gate control and minimized Miller effect outweigh benefits of integrated diode softness.

Compared with IKW40N60H3 and FGH60N60SMD, IKW60N60H3FKSA1 uniquely balances high-current capability, low switching loss, and monolithic diode softness - making it optimal for 40–80 kW industrial inverters where thermal density and EMI constraints dominate.

Availability

IKW60N60H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, welding converters, and solar central inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IKW60N60H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IKW60N60H3FKSA1 belongs to Infineon's High Speed Switching Series - engineered specifically for industrial motor drives, UPS, and welding equipment demanding low-loss, high-reliability 600 V IGBTs with integrated soft diodes.

FAQ

What is the maximum allowable gate-emitter voltage for IKW60N60H3FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller coupling during high dv/dt transitions.

Does IKW60N60H3FKSA1 require a negative gate drive voltage?

No - it operates reliably with 0 V to +15 V gate drive, but a –5 V to –8 V negative turn-off bias is recommended to improve noise immunity and prevent spurious conduction in high dv/dt environments such as multi-level inverters or paralleled configurations.

Can IKW60N60H3FKSA1 be used in parallel configurations?

Yes - its positive VCE(sat) temperature coefficient (increasing from 1.85 V at 25°C to 2.25 V at 175°C) enables natural current sharing. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink to maintain <5°C junction temperature difference.

Is the anti-parallel diode in IKW60N60H3FKSA1 suitable for ZVS or resonant topologies?

Yes - its soft, fast recovery (trr = 143 ns, Qrr = 1.20 µC) and low peak reverse recovery current (IRRM = 13.0 A) minimize voltage overshoot and ringing, making it compatible with LLC and phase-shifted full-bridge topologies operating up to 100 kHz with controlled zero-voltage switching transitions.

IKW60N60H3FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
80 A
Current - Collector Pulsed (Icm):
180 A
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 60A
Power - Max:
416 W
Switching Energy:
2.1mJ (on), 1.13mJ (off)
Input Type:
Standard
Gate Charge:
375 nC
Td (on/off) @ 25°C:
27ns/252ns
Test Condition:
400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr):
143 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3

IKW60N60H3FKSA1 FAQ

1.How can I place an order for IKW60N60H3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW60N60H3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW60N60H3FKSA1 reliable?

The price and inventory of IKW60N60H3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW60N60H3FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW60N60H3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW60N60H3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW60N60H3FKSA1?

IKW60N60H3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW60N60H3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW60N60H3FKSA1?

For technical support, including IKW60N60H3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW60N60H3FKSA1 requirements.

6.How does Aetrix verify that IKW60N60H3FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW60N60H3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW60N60H3FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW60N60H3FKSA1?

All IKW60N60H3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW60N60H3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW60N60H3FKSA1 part is unused and in its original packaging.

Return procedure for IKW60N60H3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKW60N60H3FKSA1 Tags

  • IKW60N60H3FKSA1
  • IKW60N60H3FKSA1 PDF
  • IKW60N60H3FKSA1 Datasheet
  • IKW60N60H3FKSA1 Specifications
  • IKW60N60H3FKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IKW60N60H3FKSA1
  • Buy IKW60N60H3FKSA1
  • IKW60N60H3FKSA1 Price
  • IKW60N60H3FKSA1 Distributor
  • IKW60N60H3FKSA1 Supplier
  • IKW60N60H3FKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER