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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW75N120CH7XKSA1

Name: IKW75N120CH7XKSA1
Brand: Infineon Technologies
SKU: IKW75N120CH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW75N120CH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW75N120CH7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 92A TO247-3

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Product details

Overview

IKW75N120CH7XKSA1 from Infineon is a high-speed 1200 V, 75 A TRENCHSTOP™ IGBT 7 co-packed with a full-rated 75 A ultra-fast soft-commutating Rapid diode in TO-247-3 package. It delivers V_CE(sat) = 1.7 V at 25°C, t_rr = 145 ns (25°C), and Q_rr = 2.32 µC, enabling high-efficiency hard-switching in 2-level inverters and 3-level NPC/T-type topologies for industrial UPS and EV charging systems.

For engineers reviewing the IKW75N120CH7XKSA1 datasheet, IKW75N120CH7XKSA1 pinout, IKW75N120CH7XKSA1 application, or IKW75N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, low switching losses (E_on = 4.22 mJ, E_off = 1.66 mJ at 25°C), and validated industrial qualification per JEDEC47/20/22.

Technical Context

This device integrates an IGBT and a complementary emitter-controlled diode on a single die substrate, sharing thermal and electrical coupling to minimize parasitic inductance (L_E = 13 nH) and optimize commutation behavior. Its gate charge (Q_G = 535 nC) and low C_res (54 pF) support fast, controllable turn-on/turn-off with RG = 8 Ω.

The IGBT exhibits a strongly positive V_CE(sat) temperature coefficient (1.7 V @ 25°C → 2.0 V @ 175°C), ensuring current-sharing stability during parallel operation. The diode provides soft reverse recovery (I_rrm = 35 A, dirr/dt = −333 A/µs) and low E_rec = 0.701 mJ, reducing voltage overshoot and EMI in high-dV/dt applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - supports DC bus voltages up to 960 V in 2L inverters with 20% safety margin
I_C / I_F	75 A continuous - rated for both IGBT collector and diode forward current under same thermal constraints
V_CE(sat)	1.7 V @ 25°C - enables low conduction loss (P_cond ≈ 127.5 W at 75 A) in high-power stages
t_rr / Q_rr	145 ns / 2.32 µC @ 25°C - minimizes diode switching loss and reduces snubber requirements
R_th(j-c) (IGBT)	0.21–0.27 K/W - allows >275 W power dissipation at T_c = 100°C, supporting compact heatsink designs
T_vj(max)	175°C - extends operational lifetime under transient overload and high ambient conditions
E_on + E_off	5.88 mJ @ 25°C - total switching energy at 600 V/75 A defines hard-switching efficiency ceiling

Pinout & Package

Package: PG-TO247-3-STD-NN2.5 (standard 3-pin TO-247 with 2.5 mm lead spacing, RoHS-compliant Pb-free plating).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-voltage power output terminal of IGBT	Connected to DC+ bus; carries full load current and withstands 1200 V blocking
Gate (G)	Control input for IGBT channel modulation	Requires ±20 V rating; driven via low-inductance path to manage Q_G = 535 nC efficiently
Emitter (E)	Common reference node for IGBT and diode	Serves as return path for both IGBT and diode currents; shared thermal and electrical node

Key Features

Feature	Design Value
Co-packaged Rapid diode	Full 75 A rating with soft recovery (t_rr = 145 ns, I_rrm = 35 A) eliminates need for external anti-parallel diode
Positive V_CE(sat) tempco	Enables stable current sharing across parallel devices without active current balancing circuitry
Low internal emitter inductance	L_E = 13 nH - reduces voltage spikes during turn-off and improves switching waveform fidelity
JEDEC-qualified industrial reliability	Validated per JEDEC47/20/22 - ensures long-term robustness in UPS, welding, and EV-charging duty cycles
PSpice model availability	Official simulation model provided by Infineon - enables accurate loss estimation and gate drive design prior to prototyping

Applications

Industrial UPS Systems

EV Charging Stations

Use Scenario: Bidirectional DC-AC conversion in online double-conversion UPS with 400–800 V DC link.

IC Role / Device Role / Timing Role: Main inverter switch in 2L topology; handles 75 A RMS output current at 16 kHz switching frequency.

Use Value: Low V_CE(sat) and soft diode recovery reduce conduction + switching losses, improving system efficiency from 95.2% to 96.1% at full load.

Use Scenario: AC/DC rectification and DC/DC isolation stage in 11–22 kW AC EV chargers.

IC Role / Device Role / Timing Role: High-side switch in interleaved PFC or DC-link chopper; operates at 20–50 kHz with 1200 V blocking.

Use Value: 175°C junction rating and low Q_rr enable reliable operation under sustained 75 A load with minimal thermal derating.

String Solar Inverters

Industrial Welding Equipment

Use Scenario: Three-phase inverter stage in 10–25 kW string inverters feeding 600–1000 V DC strings.

IC Role / Device Role / Timing Role: Switching element in NPC-T-type topology; manages reactive power flow and grid synchronization.

Use Value: Optimized E_ts = 5.88 mJ at 25°C enables high-frequency operation while maintaining <1.2°C/W thermal rise under 100% duty cycle.

Use Scenario: Primary inverter in IGBT-based inverter welders delivering 200–500 A DC output at 10–20 kHz.

IC Role / Device Role / Timing Role: Hard-switched main power switch; conducts pulsed 300 A peak current with <500 ns turn-off delay.

Use Value: Robust SOA (300 A @ V_CE ≤ 800 V) and low E_off = 1.66 mJ ensure consistent arc initiation and stable droop control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS IXGN75N120B3	1200 V / 75 A; V_CE(sat) = 2.0 V @ 25°C; t_rr = 220 ns; no integrated diode (requires external)	Higher conduction loss (+17.6 W at 75 A); requires separate diode layout and thermal management	Preferred where discrete diode selection is needed for custom recovery tuning or cost-sensitive BOMs
STMicroelectronics STGW75H120DF2	1200 V / 75 A; V_CE(sat) = 1.85 V @ 25°C; Q_rr = 3.1 µC; soft-recovery diode included	Higher Q_rr increases E_rec by ~40%, requiring larger snubbers in high-dV/dt 3L topologies	Selected when legacy ST ecosystem compatibility or specific gate drive voltage tolerance (±30 V) is required

Compared with IXGN75N120B3 and STGW75H120DF2, IKW75N120CH7XKSA1 offers the lowest combined conduction–switching loss profile and best-in-class softness (low dirr/dt, low E_rec), making it optimal for high-density, high-efficiency industrial inverters where thermal headroom and EMI control are critical.

Availability

IKW75N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, EV charging stations, and string solar inverters requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKW75N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW75N120CH7XKSA1 belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial motor drives, UPS, and grid-tied power conversion.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies R_G(off) ≥ 5.3 Ω for safe operating area compliance. For standard operation at 600 V/75 A, R_G = 8 Ω is validated to achieve t_d(off) = 461 ns and E_off = 1.66 mJ at 25°C. Increasing beyond 15 Ω risks excessive E_off and voltage overshoot due to slower current fall rate.

Can IKW75N120CH7XKSA1 be paralleled without active current balancing?

Yes - its strongly positive V_CE(sat) temperature coefficient (1.7 V @ 25°C → 2.0 V @ 175°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and identical heatsink mounting torque (0.6 Nm for M3 screws) to maintain thermal uniformity.

Is the integrated diode rated for continuous 75 A conduction?

Yes - the co-packed Rapid diode is fully rated for I_F = 75 A continuous at T_c = 100°C, matching the IGBT's I_C rating. Its V_F = 2.5 V @ 25°C and soft recovery (t_rr = 145 ns) are characterized under identical thermal and current conditions.

What thermal interface material is recommended for mounting?

Infineon recommends thermally conductive silicone grease (e.g., Dow Corning TC-5123) or phase-change pads (e.g., Henkel Gap Pad VOX 300) with thermal conductivity ≥ 3.0 W/m·K. Mounting torque must be strictly controlled at 0.6 Nm per M3 screw to avoid case deformation and ensure R_th(j-c) ≤ 0.27 K/W.

IKW75N120CH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 92 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.15V @ 15V, 75A

Power - Max:: 549 W

Switching Energy:: 4.22mJ (on), 1.66mJ (off)

Input Type:: Standard

Gate Charge:: 535 nC

Td (on/off) @ 25°C:: 55ns/461ns

Test Condition:: -

Reverse Recovery Time (trr):: 145 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-U06

IKW75N120CH7XKSA1 FAQ

1.How can I place an order for IKW75N120CH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW75N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW75N120CH7XKSA1 reliable?

The price and inventory of IKW75N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW75N120CH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW75N120CH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW75N120CH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW75N120CH7XKSA1?

IKW75N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW75N120CH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW75N120CH7XKSA1?

For technical support, including IKW75N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW75N120CH7XKSA1 requirements.

6.How does Aetrix verify that IKW75N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW75N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW75N120CH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW75N120CH7XKSA1?

All IKW75N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW75N120CH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW75N120CH7XKSA1 part is unused and in its original packaging.

Return procedure for IKW75N120CH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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