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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW75N60H3FKSA1

Name: IKW75N60H3FKSA1
Brand: Infineon Technologies
SKU: IKW75N60H3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW75N60H3FKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW75N60H3FKSA1.pdf

Description:: IGBT 600V 80A 428W TO247-3

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Product details

Overview

IKW75N60H3FKSA1 from Infineon is a 600 V, 75 A high-speed IGBT in TRENCHSTOP™ III technology with integrated soft-recovery anti-parallel diode, rated for 175 °C junction operation and optimized for hard-switching converters requiring low conduction loss (V_CE(sat) = 1.85 V @ 75 A, 25 °C) and fast switching (t_off,del = 265 ns, E_off = 1.70 mJ). It is used in industrial welding inverters and UPS DC-AC stages.

For engineers reviewing the IKW75N60H3FKSA1 datasheet, IKW75N60H3FKSA1 pinout, IKW75N60H3FKSA1 application, or IKW75N60H3FKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, short-circuit ruggedness (5 µs @ 150 °C), diode reverse recovery charge (Q_rr = 1.80 µC @ 25 °C), and thermal resistance (R_th(j-c) = 0.35 K/W).

Technical Context

This IGBT employs trench-gate and field-stop structure to simultaneously minimize conduction loss and switching energy-achieving 1.85 V V_CE(sat) at 75 A and total switching energy of 4.70 mJ under 400 V/75 A inductive conditions. Its integrated diode features soft, fast recovery (t_rr = 190 ns, Q_rr = 1.80 µC) with controlled di/dt (–110 A/µs) to reduce EMI.

The device supports robust short-circuit capability (1000 cycles, 5 µs duration, 1.0 s interval) and operates up to 175 °C junction temperature, validated per JEDEC standards. Package-level thermal resistance (R_th(j-c) = 0.35 K/W for IGBT, 0.80 K/W for diode) enables high-power density designs in forced-air or liquid-cooled systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	600 V - supports 400 V DC bus designs with 50 % voltage margin for transients and ringing.
I_C cont @ T_c = 25 °C	75 A - continuous collector current rating at case temperature, defining base thermal design point.
V_CE(sat)	1.85 V @ 75 A, 25 °C - low saturation voltage reduces conduction loss and heatsink size in high-current inverters.
E_off	1.70 mJ @ 400 V/75 A - quantifies turn-off energy loss critical for efficiency and thermal management at >10 kHz switching.
t_rr (diode)	190 ns @ 25 °C - fast, soft reverse recovery minimizes voltage overshoot and snubber stress in bridge configurations.
R_th(j-c) (IGBT)	0.35 K/W - enables direct mounting to heatsinks with predictable junction-to-case thermal drop under full load.
Short-circuit time	5 µs @ V_CE ≤ 400 V, T_j = 150 °C - defines safe fault-clearance window for protection circuitry design.

Pinout & Package

IKW75N60H3FKSA1 uses the PG-TO247-3 package: insulated plastic case with solderable copper tab (collector), three leads, and standardized mechanical footprint for industrial mounting. The backside metal surface serves as the collector terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control input for MOS-driven IGBT channel; requires low-inductance gate drive (R_g = 5.2 Ω typical) to manage dV/dt and switching speed.
Pin 2 & Backside	Collector	Main high-side power terminal; backside metal provides low-inductance, high-current path to heatsink and DC bus.
Pin 3	Emitter	Power return path and gate drive reference; must be routed with minimal loop inductance to suppress voltage spikes during turn-off.

Key Features

Feature	Design Value
TRENCHSTOP™ III technology	Combines trench gate and field-stop layer to achieve 1.85 V V_CE(sat) and 4.70 mJ total switching energy at 400 V/75 A.
Integrated soft-recovery diode	Q_rr = 1.80 µC and t_rr = 190 ns enable reduced snubber losses and lower EMI in bidirectional switching applications.
175 °C maximum junction temperature	Enables higher power density and extended lifetime in thermally constrained enclosures without derating at elevated ambient.
JEDEC-qualified reliability	Validated for industrial and multimarket use including welding, UPS, and motor drives per AEC-Q101-equivalent stress testing.
Pb-free & halogen-free construction	RoHS-compliant lead plating and mold compound meet global environmental compliance requirements for industrial OEM production.

Applications

Industrial Welding Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: High-frequency (10–30 kHz) DC-AC inversion in IGBT-based inverter welders delivering 30–150 A output current.

IC Role / Device Role / Timing Role: Main switching device in full-bridge output stage; handles hard-switched PWM with precise dead-time control.

Use Value: Low V_CE(sat) and fast turn-off (t_fall = 27 ns) reduce thermal stress and improve arc stability during dynamic load changes.

Use Scenario: Online double-conversion UPS systems converting rectified AC to stable 380–400 V DC bus, then inverting to clean 230 V AC output.

IC Role / Device Role / Timing Role: Primary inverter switch in three-phase or single-phase H-bridge; operates at 8–16 kHz with sinusoidal PWM modulation.

Use Value: Integrated diode with soft recovery (Q_rr = 1.80 µC) minimizes commutation losses and eliminates need for external fast diodes.

Solar Central Inverters

Induction Heating Systems

Use Scenario: Medium-voltage (600 V class) DC-AC conversion in central PV inverters handling 50–100 kW per string.

IC Role / Device Role / Timing Role: High-side switch in NPC or T-type multilevel topologies; subjected to repetitive hard switching and voltage transients.

Use Value: 600 V blocking rating and 5 µs short-circuit withstand time support reliable operation under grid fault conditions.

Use Scenario: Resonant tank switching in solid-state induction heating units operating at 20–50 kHz with high di/dt demands.

IC Role / Device Role / Timing Role: Half-bridge switch driving series-resonant LC load; conducts high peak currents with rapid polarity reversal.

Use Value: Low internal emitter inductance (13 nH) and symmetric diode recovery ensure stable zero-voltage switching (ZVS) initiation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N60H3	Lower current rating (40 A vs. 75 A); identical V_CE = 600 V, V_CE(sat) = 1.85 V, and package (PG-TO247-3).	Targeted at <5 kW systems where thermal headroom and peak current demand are reduced.	Select when system I_C requirement is ≤40 A and board space or cost optimization is prioritized.
FGH75T65SHD	650 V rating, higher V_CE(sat) (2.05 V @ 75 A), slower turn-off (t_off,del = 320 ns), and higher E_off (2.3 mJ).	Designed for 650 V bus systems with relaxed switching frequency (<10 kHz) and higher voltage margin needs.	Choose only if 650 V blocking is mandatory and thermal budget allows higher conduction + switching losses.

Compared with IKW40N60H3 and FGH75T65SHD, IKW75N60H3FKSA1 delivers optimal balance of current capacity, switching speed, and thermal performance for 600 V, ≥50 kW industrial inverters operating above 10 kHz.

Availability

IKW75N60H3FKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial welding converters, and high-frequency motor drives requiring stable component supply across multi-year production cycles.

Supply support for IKW75N60H3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW75N60H3FKSA1 belongs to Infineon's TRENCHSTOP™ III high-speed IGBT product line, engineered specifically for high-efficiency, high-frequency switching in industrial power conversion systems.

FAQ

What is the maximum allowable gate-emitter voltage for IKW75N60H3FKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation beyond ±15 V risks permanent gate oxide damage. Recommended gate drive is +15 V for turn-on and –5 V to –10 V for active Miller clamping during turn-off to prevent spurious conduction.

Does IKW75N60H3FKSA1 require an external freewheeling diode?

No. It integrates a soft, fast-recovery anti-parallel diode with t_rr = 190 ns and Q_rr = 1.80 µC at 25 °C. This diode is co-packaged and thermally coupled to the IGBT die, eliminating the need for discrete diodes in standard inverter leg configurations.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases with junction temperature: 1.85 V at 25 °C, 2.10 V at 125 °C, and 2.25 V at 175 °C. This positive temperature coefficient ensures current sharing stability in parallel configurations and simplifies thermal runaway mitigation.

What is the recommended gate resistor value for standard operation?

A gate resistor of 5.2 Ω is specified in the datasheet for test conditions (V_GE = 0 V/15 V, V_CE = 400 V, I_C = 75 A). This value balances switching speed (t_off,del = 265 ns) and gate oscillation damping; values below 3.3 Ω increase dV/dt stress, while above 10 Ω raises switching losses.

IKW75N60H3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2.3V @ 15V, 75A

Power - Max:: 428 W

Switching Energy:: 3mJ (on), 1.7mJ (off)

Input Type:: Standard

Gate Charge:: 470 nC

Td (on/off) @ 25°C:: 31ns/265ns

Test Condition:: 400V, 75A, 5.2Ohm, 15V

Reverse Recovery Time (trr):: 190 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW75N60H3FKSA1 FAQ

1.How can I place an order for IKW75N60H3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW75N60H3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW75N60H3FKSA1 reliable?

The price and inventory of IKW75N60H3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW75N60H3FKSA1 is usually 5 days.

3.What payment methods are accepted for IKW75N60H3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW75N60H3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW75N60H3FKSA1?

IKW75N60H3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW75N60H3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW75N60H3FKSA1?

For technical support, including IKW75N60H3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW75N60H3FKSA1 requirements.

6.How does Aetrix verify that IKW75N60H3FKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW75N60H3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW75N60H3FKSA1 meets industry standards.

7.What is the process for return or replacement of IKW75N60H3FKSA1?

All IKW75N60H3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW75N60H3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW75N60H3FKSA1 part is unused and in its original packaging.

Return procedure for IKW75N60H3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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