Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW75N60TAFKSA1

Name: IKW75N60TAFKSA1
Brand: Infineon Technologies
SKU: IKW75N60TAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKW75N60TAFKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW75N60TAFKSA1.pdf

Description:: IGBT TRENCH/FS 600V 80A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,948

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKW75N60TAFKSA1 from Infineon Technologies is a 600 V, 75 A TRENCHSTOP™ IGBT with integrated anti-parallel Emitter Controlled HE diode in a PG-TO247-3 package. It delivers 1.5 V typical V_CE(sat) at 25°C, 175°C maximum junction temperature, and 5 µs short-circuit withstand time under V_GE = 15 V, enabling high-efficiency motor drives and UPS inverters.

For engineers reviewing the IKW75N60TAFKSA1 datasheet, IKW75N60TAFKSA1 pinout, IKW75N60TAFKSA1 application, or IKW75N60TAFKSA1 equivalent, key selection criteria include its low conduction loss, soft fast-recovery diode, tight parameter distribution, and JEDEC-qualified ruggedness for industrial power conversion.

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop technology to achieve low V_CE(sat) (1.5 V typ.) and positive temperature coefficient for inherent current sharing. Its integrated Emitter Controlled HE diode provides 121 ns t_rr at 25°C and 182 ns at 175°C, minimizing switching losses and EMI in hard-switched topologies.

The device features 0.35 K/W IGBT and 0.6 K/W diode thermal resistance (junction-to-case), supporting high-power density designs. Gate charge is 470 nC at V_CC = 480 V, enabling robust gate drive design with external R_G tuning for optimized switching trade-offs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - Maximum blocking voltage for 400 V DC-link applications with margin
I_C	75 A - Continuous collector current at T_C = 25°C, limited by bondwire
V_CE(sat)	1.5 V (typ. @ 25°C) - Low conduction loss enabling <1.5 W static loss at 75 A
t_SC	5 µs - Short-circuit withstand time at V_GE = 15 V, V_CC ≤ 400 V, T_j ≤ 150°C
t_rr	121 ns (typ. @ 25°C) - Soft, fast diode recovery reduces voltage overshoot and snubber stress
R_thJC (IGBT)	0.35 K/W - Enables direct heatsink mounting with predictable thermal drop
Q_G	470 nC - Gate charge requiring ~7.1 mA average drive current at 15 kHz switching

Pinout & Package

PG-TO247-3 package: isolated tab, through-hole mounting, standard footprint compatible with industry heatsinks and clamping hardware.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC-link positive; carries full load current and fault current
Gate (G)	Control input	Requires 15 V drive for full saturation; ±20 V absolute max rating
Emiter (E)	Power return and reference node	Serves as common emitter for IGBT and cathode for integrated diode; critical for gate loop layout

Key Features

Feature	Design Value
Low-loss DuoPack integration	Single-package IGBT + soft fast-recovery HE diode eliminates discrete pairing mismatch and layout parasitics
Positive V_CE(sat) tempco	Enables parallel operation without current imbalance up to 175°C junction temperature
Tight parameter distribution	Reduces system-level derating needs and simplifies gate driver design across production lots
JEDEC-qualified ruggedness	Validated per J-STD-020/JESD-022 for industrial reliability in harsh thermal cycling environments
Pb-free & RoHS compliant	Meets global environmental compliance requirements without performance compromise

Applications

Industrial Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in 15–30 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: High-side switch in 2-level NPC topology operating at 8–16 kHz with sinusoidal PWM.

Use Value: 1.5 V V_CE(sat) and soft diode reduce conduction + switching losses by ~12% vs. standard 600 V IGBTs at 75 A.

Use Scenario: Inverter bridge in online double-conversion UPS delivering clean 50/60 Hz sine wave output.

IC Role / Device Role / Timing Role: Main power switch handling bidirectional energy flow during battery backup mode.

Use Value: 5 µs short-circuit rating enables reliable overcurrent protection without desaturation circuit complexity.

Solar Photovoltaic Inverters

Induction Heating Systems

Use Scenario: DC-AC stage in string inverters converting 600–1000 V DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT in unipolar modulation with active clamp snubber.

Use Value: 121 ns diode t_rr minimizes reverse recovery spikes, reducing EMI filter size by ~30%.

Use Scenario: Half-bridge resonant inverter driving 20–100 kHz induction coils for metal heating.

IC Role / Device Role / Timing Role: Fast-switching power switch managing high di/dt (>1 kA/µs) and zero-voltage switching transitions.

Use Value: High dV/dt immunity and 1013 A/µs dirr/dt capability prevent false triggering during rapid diode commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + integrated diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N60H3	Lower I_C (40 A), higher V_CE(sat) (1.6 V typ.), same 600 V rating and TO247-3 package	Better suited for 10–15 kW systems where thermal margin allows reduced conduction loss priority	Select when cost sensitivity outweighs peak efficiency needs and case temperature remains ≤90°C
FGH75T60UFD	Same 75 A/600 V rating but uses Field Stop III, higher Q_G (520 nC), slower t_rr (200 ns)	Higher diode recovery loss increases snubber requirements in high-frequency resonant converters	Prefer for lower EMI-sensitive applications where gate drive simplicity is prioritized over switching speed

Compared with IKW40N60H3 and FGH75T60UFD, IKW75N60TAFKSA1 offers superior conduction efficiency and faster diode recovery-critical for high-power-density, high-frequency industrial inverters where thermal headroom and EMI control are constrained.

Availability

IKW75N60TAFKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar photovoltaic inverters, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for IKW75N60TAFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

The TRENCHSTOP™ IGBT series targets high-efficiency, high-reliability industrial power conversion-designed specifically for motor drives, UPS, renewable energy inverters, and welding equipment demanding ruggedness and thermal stability.

FAQ

What is the maximum allowable gate-emitter voltage for IKW75N60TAFKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC. Operation above +15 V or below –10 V risks permanent gate oxide damage. Recommended gate drive is +15 V for full saturation and –5 V to –10 V for fast, noise-immune turn-off. Transient spikes exceeding ±20 V must be clamped using TVS diodes or Zener networks.

Does IKW75N60TAFKSA1 require an external freewheeling diode?

No. The device integrates a soft, fast-recovery Emitter Controlled HE diode rated for 75 A continuous forward current and 225 A pulsed current. Its 121 ns reverse recovery time at 25°C and low Q_rr (2.4 µC) eliminate need for external diodes in standard inverter configurations.

How does junction temperature affect V_CE(sat) performance?

V_CE(sat) increases linearly with junction temperature due to its positive temperature coefficient: from 1.5 V at 25°C to 1.9 V at 175°C. This behavior ensures inherent current sharing in parallel configurations and improves thermal stability during overload conditions without external sensing.

Can IKW75N60TAFKSA1 be used in parallel configurations?

Yes. Its positive V_CE(sat) temperature coefficient, tight parameter distribution, and matched IGBT/diode characteristics enable reliable paralleling. Design requires matched gate resistors, symmetrical PCB layout, and shared heatsink mounting to maintain thermal uniformity across devices.

IKW75N60TAFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 75A

Power - Max:: 428 W

Switching Energy:: 4.5mJ

Input Type:: Standard

Gate Charge:: 470 nC

Td (on/off) @ 25°C:: 33ns/330ns

Test Condition:: 400V, 75A, 5Ohm, 15V

Reverse Recovery Time (trr):: 121 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW75N60TAFKSA1 FAQ

1.How can I place an order for IKW75N60TAFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW75N60TAFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW75N60TAFKSA1 reliable?

The price and inventory of IKW75N60TAFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW75N60TAFKSA1 is usually 5 days.

3.What payment methods are accepted for IKW75N60TAFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW75N60TAFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW75N60TAFKSA1?

IKW75N60TAFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW75N60TAFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW75N60TAFKSA1?

For technical support, including IKW75N60TAFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW75N60TAFKSA1 requirements.

6.How does Aetrix verify that IKW75N60TAFKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW75N60TAFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW75N60TAFKSA1 meets industry standards.

7.What is the process for return or replacement of IKW75N60TAFKSA1?

All IKW75N60TAFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW75N60TAFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW75N60TAFKSA1 part is unused and in its original packaging.

Return procedure for IKW75N60TAFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…