Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW75N60TFKSA1

Name: IKW75N60TFKSA1
Brand: Infineon Technologies
SKU: IKW75N60TFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKW75N60TFKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW75N60TFKSA1.pdf

Description:: IGBT TRENCH FS 600V 80A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:928

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKW75N60TFKSA1 from Infineon Technologies is a 600 V, 75 A TRENCHSTOP™ IGBT with integrated Emitter Controlled HE diode in a PG-TO247-3 package. It delivers low V_CE(sat) (1.5 V typ. at T_j = 25°C), 5 µs short-circuit withstand time, and operates up to 175°C junction temperature - optimized for high-efficiency frequency converters and UPS systems.

For engineers reviewing the IKW75N60TFKSA1 datasheet, IKW75N60TFKSA1 pinout, IKW75N60TFKSA1 application, or IKW75N60TFKSA1 equivalent, key selection criteria include its soft fast-recovery anti-parallel diode, positive V_CE(sat) temperature coefficient, tight parameter distribution, and JEDEC-qualified ruggedness for industrial power conversion.

Technical Context

This IGBT employs TRENCHSTOP™ and Fieldstop technology to achieve low conduction loss and high switching speed while maintaining soft, low-EMI turn-off behavior. Its integrated Emitter Controlled HE diode enables low Q_rr (2.4 µC typ. at 25°C) and controlled reverse recovery (t_rr = 121 ns).

The device features a positive temperature coefficient for V_CE(sat), enabling inherent current sharing in parallel configurations, and supports gate drive with ±20 V rating and internal gate resistor (R_Gint unspecified but typical for TO247 DuoPack). Thermal resistance R_thJC is 0.35 K/W for the IGBT and 0.6 K/W for the diode.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	600 V - supports DC bus voltages up to 400 V in 3-phase inverters with margin
I_C	75 A continuous - rated for sustained operation at T_C = 25°C with bondwire-limited current handling
V_CE(sat)	1.5 V (typ. at 25°C), 1.9 V (typ. at 175°C) - low conduction loss enables high efficiency at full load
t_SC	5 µs - enables robust short-circuit protection without desaturation circuitry overload
T_j,max	+175°C - allows compact heatsink design and operation in high-ambient industrial environments
Q_rr	2.4 µC (typ. at 25°C), 5.8 µC (typ. at 175°C) - low reverse recovery charge reduces diode switching loss and voltage overshoot
E_ts	4.5 mJ (typ. at 25°C), 5.8 mJ (typ. at 175°C) - total switching energy defines thermal stress under PWM operation

Pinout & Package

Package: PG-TO247-3 - standard 3-pin through-hole power package with isolated mounting flange, optimized for high-current, high-voltage industrial applications.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC+ bus; carries full load current and must be routed with low-inductance layout
Gate (G)	Control input for IGBT channel	Requires stable ±15 V drive; internal gate resistor aids dv/dt immunity and damped turn-on
Emitter (E)	Common reference for IGBT and diode	Serves as return path for both IGBT collector current and anti-parallel diode forward current

Key Features

Feature	Design Value
Low-loss DuoPack integration	Single-package co-location of IGBT + soft fast-recovery HE diode eliminates interconnect inductance and simplifies layout
Positive V_CE(sat) tempco	Enables natural current balancing in paralleled devices without external emitter resistors
JEDEC-qualified ruggedness	Validated per J-STD-020/JESD-022 for reliability in motor drives and UPS under thermal cycling and humidity
Soft, low-EMI switching	Controlled tail current and diode recovery reduce radiated emissions and snubber requirements
Pb-free RoHS compliance	Meets global environmental regulations; compatible with lead-free reflow and wave soldering processes

Applications

Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase inverter stage in HVAC compressors and industrial servo drives operating at 4–16 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switching element in 6-pulse bridge; handles bidirectional reactive power via integrated diode.

Use Value: 1.5 V V_CE(sat) reduces conduction loss by ~18% vs. legacy 2.1 V IGBTs at 75 A, improving system efficiency by >1.2% at full load.

Use Scenario: Inverter output stage in online double-conversion UPS delivering clean 50/60 Hz sine wave under battery backup.

IC Role / Device Role / Timing Role: Final power switch in H-bridge topology; conducts during line mode and switches during battery mode transitions.

Use Value: 5 µs short-circuit withstand time allows safe operation during output fault events without immediate desat shutdown, increasing system uptime.

Frequency Converters

Industrial Welding Equipment

Use Scenario: AC-to-AC variable-frequency drive for pump/fan control in water treatment plants with ambient temperatures up to 65°C.

IC Role / Device Role / Timing Role: Main switching device in two-level voltage source inverter; modulated using space vector PWM.

Use Value: 175°C max junction temperature enables derating only to 60 A at T_C = 110°C (Fig. 4), supporting compact enclosure designs.

Use Scenario: Primary inverter in IGBT-based inverter welders requiring high peak current (225 A pulsed) and fast dynamic response.

IC Role / Device Role / Timing Role: High-current switching node in resonant DC-link topology; conducts 75 A continuous and 225 A pulsed during arc initiation.

Use Value: Tight parameter distribution ensures consistent arc stability across production units, reducing weld spatter and rework rate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-in-DuoPack applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N60T	Lower I_C rating (40 A), same V_CE (600 V), reduced E_ts (3.1 mJ), smaller die size	Better suited for 15–30 kW systems with lower thermal budget; less overcurrent margin	Select when cost and footprint are prioritized over peak current headroom
IKW75N65ES5	650 V rating, field-stop 5 technology, higher V_CE(sat) (1.65 V), improved t_SC (6 µs)	Designed for higher DC-link voltages (e.g., 450–500 V solar inverters); slightly higher conduction loss	Choose for new designs targeting extended voltage margin and enhanced short-circuit robustness

Compared with IKW40N60T and IKW75N65ES5, the IKW75N60TFKSA1 offers optimal balance of 75 A current capability, 1.5 V V_CE(sat), and proven 5 µs short-circuit tolerance - making it the preferred choice for established 400 V industrial inverter platforms requiring drop-in reliability and thermal headroom.

Availability

IKW75N60TFKSA1 is available at Aetrix Electronics and suitable for frequency converters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKW75N60TFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT series targets high-efficiency, high-reliability power conversion systems - specifically engineered for motor drives, UPS, welding, and frequency converters where ruggedness, thermal stability, and low EMI are critical.

FAQ

What is the maximum gate-emitter voltage rating for IKW75N60TFKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with recommended operating range of –10 V to +15 V. Exceeding +15 V increases risk of gate oxide degradation, while negative bias below –10 V may cause unintended turn-on due to Miller effect in high-dv/dt environments. Gate drive circuits must include clamping and low-inductance layout to maintain this rating.

Does IKW75N60TFKSA1 require an external freewheeling diode?

No - it integrates a soft, fast-recovery Emitter Controlled HE diode in the same PG-TO247-3 package. This diode provides bidirectional current path for inductive loads, eliminating need for discrete antiparallel diodes and reducing PCB area, parasitic inductance, and thermal interface count.

How does the positive temperature coefficient of V_CE(sat) benefit parallel operation?

The positive V_CE(sat) temperature coefficient causes hotter devices to exhibit higher saturation voltage, naturally limiting current share imbalance. This self-balancing behavior reduces or eliminates the need for matched gate resistors or emitter resistors in paralleled configurations - simplifying thermal design and improving system reliability.

What thermal resistance values apply to the IGBT and diode sections separately?

The IGBT section has R_thJC = 0.35 K/W, while the diode section has R_thJC = 0.6 K/W - both measured junction-to-case. These values are independent and must be used separately in thermal modeling. The case temperature (T_C) is defined at the mounting flange, and both sections share the same mechanical mounting surface.

IKW75N60TFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 600 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 2V @ 15V, 75A

Power - Max:: 428 W

Switching Energy:: 4.5mJ

Input Type:: Standard

Gate Charge:: 470 nC

Td (on/off) @ 25°C:: 33ns/330ns

Test Condition:: 400V, 75A, 5Ohm, 15V

Reverse Recovery Time (trr):: 121 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IKW75N60TFKSA1 FAQ

1.How can I place an order for IKW75N60TFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW75N60TFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW75N60TFKSA1 reliable?

The price and inventory of IKW75N60TFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW75N60TFKSA1 is usually 5 days.

3.What payment methods are accepted for IKW75N60TFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW75N60TFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW75N60TFKSA1?

IKW75N60TFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW75N60TFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW75N60TFKSA1?

For technical support, including IKW75N60TFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW75N60TFKSA1 requirements.

6.How does Aetrix verify that IKW75N60TFKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW75N60TFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW75N60TFKSA1 meets industry standards.

7.What is the process for return or replacement of IKW75N60TFKSA1?

All IKW75N60TFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW75N60TFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW75N60TFKSA1 part is unused and in its original packaging.

Return procedure for IKW75N60TFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…