Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IKW75N65EH5XKSA1

Part No.:
IKW75N65EH5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKW75N65EH5XKSA1.pdf
Description:
IGBT TRENCH 650V 90A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:907

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IKW75N65EH5XKSA1 from Infineon is a 650 V, 75 A high-speed TRENCHSTOP™ 5 IGBT with integrated full-rated RAPID 1 antiparallel diode in PG-TO247-3 package, designed for hard-switching and resonant topologies in solar inverters, UPS systems, and welding equipment. It delivers 1.65 V VCE(sat) at 25°C, 175°C max junction temperature, and 160 nC total gate charge.

For engineers reviewing the IKW75N65EH5XKSA1 datasheet, IKW75N65EH5XKSA1 pinout, IKW75N65EH5XKSA1 application, or IKW75N65EH5XKSA1 equivalent, key selection criteria include switching energy (Eon/Eoff), diode reverse recovery performance (Qrr = 1.33 µC, trr = 92 ns), thermal resistance (Rth(j–C) = 0.38 K/W), and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology optimized for high-frequency operation up to 50 kHz in DC–AC and DC–DC converters. Its low QG (160 nC) and fast switching (td(off) = 174 ns, tf = 41 ns at 75 A) reduce drive loss and enable efficient gate driver sizing.

The co-packaged RAPID 1 diode features soft recovery (Irrm = 20.5 A, dIrr/dt = –600 A/µs), minimizing voltage overshoot and EMI in bidirectional current paths. Thermal design is supported by separate IGBT and diode junction-to-case thermal resistances (0.38 K/W and 0.45 K/W).

Key Specifications

ParameterValue and Actual Design Meaning
VCE Rating650 V - supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage
IC Continuous75 A at TC = 100°C - defines maximum steady-state output current under heatsink-limited conditions
VCE(sat)1.65 V at Tvj = 25°C - directly determines conduction loss (Pcond ≈ IC × VCE(sat)) in hard-switched applications
QG160 nC - sets minimum gate driver peak current requirement (e.g., >20 A for 8 Ω gate resistor)
Eoff0.90 mJ at 75 A - quantifies turn-off switching loss critical for efficiency optimization in high-frequency PWM
trr (Diode)92 ns at 75 A - enables clean commutation with low di/dt-induced voltage spikes in inductive loads
Rth(j–C)0.38 K/W - allows direct thermal interface to heatsink without derating for junction-to-case path

Pinout & Package

IKW75N65EH5XKSA1 uses the PG-TO247-3 through-hole package with isolated collector tab (backside). The case serves as the collector terminal, enabling low-inductance mounting and direct thermal coupling to heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl input requiring low-impedance drive; sensitive to ESD and ringing due to 4200 pF Cies
Pin 2 + BacksideCollectorMain high-side power terminal; backside metal provides low-inductance, high-current path and thermal conduction
Pin 3EmitterPower return and reference node for gate drive; internal emitter inductance is 13 nH (measured 5 mm from case)

Key Features

FeatureDesign Value
High-speed TRENCHSTOP™ 5 IGBT dieEnables 50 kHz+ operation with <1.2 mJ total switching energy at 37.5 A, reducing filter size and cost
Co-packaged RAPID 1 antiparallel diodeDelivers soft, low-Qrr (1.33 µC) recovery-critical for low EMI in solar MPPT and UPS bypass circuits
175°C maximum junction temperatureSupports compact thermal design with 35 K higher operating margin than 150°C-rated predecessors
JEDEC-qualified reliabilityValidated for industrial lifetime requirements in continuous-duty converters (e.g., 20-year UPS deployments)
Pb-free, RoHS-compliant platingMeets global environmental compliance without sacrificing solder joint integrity or thermal cycling robustness

Applications

Solar String InvertersUninterruptible Power Supplies (UPS)

Use Scenario: DC–AC inversion stage converting PV array output to grid-synchronized AC using three-phase NPC or T-type topologies.

IC Role / Device Role / Timing Role: Main switching device in high-side leg; handles 75 A RMS current at 16–20 kHz switching frequency with synchronous diode commutation.

Use Value: Low VCE(sat) and soft diode recovery reduce system-level conduction and switching losses, improving inverter efficiency to >98.5% at rated load.

Use Scenario: Online double-conversion UPS where IGBTs manage battery charging, inverter output, and static bypass switching.

IC Role / Device Role / Timing Role: Bidirectional switch in inverter bridge; conducts forward current during normal mode and reverse recovery during transfer to bypass.

Use Value: 175°C rating and JEDEC qualification ensure stable operation across 0–40°C ambient with no derating, supporting N+1 redundant architectures.

Industrial Welding ConvertersMid-Frequency Induction Heaters

Use Scenario: Inverter stage of IGBT-based arc welding machines delivering 100–500 A DC output with dynamic current control.

IC Role / Device Role / Timing Role: Primary power switch modulating 400 V DC bus at 20–30 kHz; withstands repetitive short-circuit events during arc ignition.

Use Value: Turn-off SOA (300 A at 650 V, 1 µs) and low tail current minimize risk of destructive failure during load transients.

Use Scenario: Resonant half-bridge inductor-heater driving 50–200 kHz tank circuits for localized metal heating in manufacturing.

IC Role / Device Role / Timing Role: High-frequency switching element in zero-voltage switching (ZVS) topology; relies on diode reverse recovery characteristics for soft turn-on.

Use Value: Fast, soft RAPID 1 diode (trr = 92 ns, Qrr = 1.33 µC) ensures reliable ZVS across full load range, reducing MOSFET replacement cost and complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N65H5Lower current rating (40 A), same 650 V, 1.65 V VCE(sat), identical RAPID 1 diodeTargeted at sub-3 kW solar microinverters and smaller UPS unitsSelect when thermal budget or cost constraints require lower conduction loss trade-off vs. 75 A capability
FGH75T65SHDSame 75 A/650 V rating but uses Field Stop IV technology; higher VCE(sat) (1.8 V), slower switching (Eoff = 1.4 mJ)Better suited for 8–15 kHz industrial motor drives where switching loss is secondary to ruggednessPrefer for legacy designs requiring drop-in compatibility with older FS-IV platforms and higher short-circuit withstand time

Compared with IKW40N65H5 and FGH75T65SHD, IKW75N65EH5XKSA1 uniquely balances high current density, ultra-low switching energy, and soft diode recovery-making it optimal for next-generation solar and UPS systems demanding >98% efficiency at 20+ kHz.

Availability

IKW75N65EH5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, uninterruptible power supplies, and industrial welding converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKW75N65EH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 IGBT product line targets high-efficiency, high-frequency power conversion systems-including photovoltaic inverters, UPS, and induction heating-where low conduction and switching losses are critical.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) = 8 Ω for standard test conditions (VGE = 0/15 V, IC = 75 A). Using >12 Ω increases td(off) and Eoff significantly-up to 1.0 mJ at 150°C-risking thermal runaway in high-frequency operation. For robust short-circuit protection, keep RG(off) ≤ 10 Ω with active Miller clamping.

Can IKW75N65EH5XKSA1 replace IKW75N65ES5 in existing designs?

Yes-IKW75N65EH5XKSA1 is a direct plug-and-play upgrade to IKW75N65ES5, offering identical pinout, voltage rating, and package. It improves VCE(sat) by 0.1 V and reduces Eoff by 33%, enabling higher efficiency without layout or driver changes.

Is the backside collector electrically isolated from the mounting screw?

No-the backside collector is metallurgically bonded to the TO-247 case and forms part of the main current path. Mounting must use electrically insulating thermal pads or ceramic washers when the heatsink is grounded, per Infineon's Application Note AN2015-04.

Does the RAPID 1 diode support bidirectional current in synchronous rectification?

Yes-the co-packaged RAPID 1 diode is rated for 75 A continuous forward current and 300 A pulsed current, with soft reverse recovery (dIrr/dt = –600 A/µs). It is qualified for synchronous rectification in LLC resonant converters where controlled body-diode conduction is required.

IKW75N65EH5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
90 A
Current - Collector Pulsed (Icm):
300 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 75A
Power - Max:
395 W
Switching Energy:
2.3mJ (on), 900µJ (off)
Input Type:
Standard
Gate Charge:
160 nC
Td (on/off) @ 25°C:
28ns/174ns
Test Condition:
400V, 75A, 8Ohm, 15V
Reverse Recovery Time (trr):
92 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3

IKW75N65EH5XKSA1 FAQ

1.How can I place an order for IKW75N65EH5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW75N65EH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW75N65EH5XKSA1 reliable?

The price and inventory of IKW75N65EH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW75N65EH5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW75N65EH5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW75N65EH5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW75N65EH5XKSA1?

IKW75N65EH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW75N65EH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW75N65EH5XKSA1?

For technical support, including IKW75N65EH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW75N65EH5XKSA1 requirements.

6.How does Aetrix verify that IKW75N65EH5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW75N65EH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW75N65EH5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW75N65EH5XKSA1?

All IKW75N65EH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW75N65EH5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW75N65EH5XKSA1 part is unused and in its original packaging.

Return procedure for IKW75N65EH5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKW75N65EH5XKSA1 Tags

  • IKW75N65EH5XKSA1
  • IKW75N65EH5XKSA1 PDF
  • IKW75N65EH5XKSA1 Datasheet
  • IKW75N65EH5XKSA1 Specifications
  • IKW75N65EH5XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IKW75N65EH5XKSA1
  • Buy IKW75N65EH5XKSA1
  • IKW75N65EH5XKSA1 Price
  • IKW75N65EH5XKSA1 Distributor
  • IKW75N65EH5XKSA1 Supplier
  • IKW75N65EH5XKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER