Infineon Technologies IKW75N65EL5XKSA1

Overview

IKW75N65EL5XKSA1 from Infineon is a 650V, 75A low-V_CE(sat) TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-3 package. It delivers 1.1 V V_CE(sat) at 75 A and 25°C, supports 175°C maximum junction temperature, and achieves 436 nC total gate charge - optimized for high-efficiency industrial power conversion stages in inverters and UPS systems.

For engineers reviewing the IKW75N65EL5XKSA1 datasheet, IKW75N65EL5XKSA1 pinout, IKW75N65EL5XKSA1 application, or IKW75N65EL5XKSA1 equivalent, key selection criteria include conduction-loss vs. switching-loss tradeoff, diode reverse recovery performance (Q_rr = 1.37 µC at 25°C), thermal resistance (R_th(j-c) = 0.28 K/W for IGBT), and JEDEC-qualified reliability for 175°C operation.

Technical Context

This IGBT uses TRENCHSTOP™ 5 trench-gate field-stop technology to minimize V_CE(sat) while maintaining robust short-circuit withstand time (t_SC = 3 µs at 150°C). Its integrated RAPID 1 diode features soft reverse recovery (trr = 114 ns, dirr/dt = −2170 A/µs) and low Q_rr, reducing voltage overshoot and EMI in hard-switched topologies.

The device operates with ±20 V DC and ±30 V transient gate-emitter voltage ratings, supports 300 A pulsed collector current, and is rated for 650 V DC blocking. Thermal design is enabled by separate IGBT and diode junction-to-case thermal resistances (0.28 K/W and 0.46 K/W), allowing independent thermal modeling of both dies in the DuoPack configuration.

Key Specifications

Pinout & Package

IKW75N65EL5XKSA1 is housed in a PG-TO247-3 plastic package with isolated mounting hole, designed for high-power discrete mounting on heatsinks with M3 screw torque up to 0.6 Nm. The package provides low-inductance emitter connection and 260°C wave-soldering compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + antiparallel diode applications.

Compared with IKW40N65ES5XKSA1 and FGH75T65SHD, IKW75N65EL5XKSA1 uniquely balances conduction and switching loss across 10–25 kHz industrial switching frequencies while integrating a matched soft-recovery diode - eliminating layout mismatch and ensuring consistent commutation behavior in production units.

Availability

IKW75N65EL5XKSA1 is available at Aetrix Electronics and suitable for uninterruptible power supplies, solar photovoltaic inverters, and industrial welding machines requiring stable component supply, JEDEC-qualified reliability, and 175°C junction operation.

Supply support for IKW75N65EL5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 IGBT product line targets high-efficiency, high-reliability industrial power conversion - specifically engineered to reduce system-level losses and thermal stress in UPS, solar, and motor drive applications operating up to 175°C junction temperature.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on) = RG(off) = 4.0 Ω for characterization. Using >6 Ω increases turn-on/off times and E_on/E_off, risking thermal overload at high frequency. For 20 kHz operation with 75 A load, 3–5 Ω is optimal; values above 10 Ω require gate driver current capability ≥3 A to avoid Miller-induced false turn-on.

Can IKW75N65EL5XKSA1 replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes - it is pin-compatible with IKW75N65ES5 and offers lower V_CE(sat) (1.10 V vs. 1.35 V) and improved diode softness. However, its higher Q_G (436 nC vs. 340 nC) may require gate driver re-evaluation. No PCB layout change is needed, but thermal testing under full load is recommended due to increased power density.

Is the antiparallel diode electrically isolated from the IGBT die?

No - the RAPID 1 diode shares the emitter terminal with the IGBT in a monolithic DuoPack configuration. Both dies are mounted in the same TO-247-3 package with a common emitter pin (Pin 3), enabling compact half-bridge layouts but requiring careful gate drive referencing to avoid shoot-through during dead-time transitions.

What is the short-circuit withstand time at 150°C junction temperature?

The device sustains short-circuit conditions for t_SC = 3 µs at V_CE = 650 V, V_GE = 15 V, and T_vj = 150°C - verified per Infineon's internal qualification. This enables robust protection in motor drives and UPS systems using desaturation detection with ≤2 µs response time, provided gate drive remains active during fault.