Infineon Technologies IKW75N65ES5XKSA1

Overview

IKW75N65ES5XKSA1 from Infineon is a 650V, 75A TRENCHSTOP™ 5 high-speed soft-switching IGBT with integrated full-current-rated RAPID 1 antiparallel diode in PG-TO247-3 package. It delivers V_CE(sat) = 1.42 V at 75 A and 25°C, 175°C maximum junction temperature, and low gate charge (Q_G = 164 nC), enabling efficient operation in resonant and mid-to-high-frequency industrial power converters.

For engineers reviewing the IKW75N65ES5XKSA1 datasheet, IKW75N65ES5XKSA1 pinout, IKW75N65ES5XKSA1 application, or IKW75N65ES5XKSA1 equivalent, key selection criteria include soft-switching energy performance (E_ts = 1.32 mJ @ 38.5 A, 25°C), diode reverse recovery robustness (Q_rr = 1.25 µC, trr = 64 ns), and thermal resistance (R_th(j-c) = 0.38 K/W for IGBT).

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology optimized for hard- and soft-switching topologies. Its low tail current and controlled turn-off dynamics reduce switching losses while maintaining voltage ruggedness up to 650 V.

The co-packaged RAPID 1 diode features soft reverse recovery (I_rrm = 29.0 A, dirr/dt = –2540 A/µs @ 38.5 A) and low forward voltage (V_F = 1.50 V @ 75 A, 25°C), minimizing commutation losses and EMI in bidirectional power stages.

Key Specifications

Pinout & Package

IKW75N65ES5XKSA1 uses the PG-TO247-3 package with isolated tab (collector-connected backside). The three-terminal configuration supports high-current, low-inductance PCB layouts in power modules and discrete inverter half-bridges.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed soft-switching IGBT applications.

Compared with IKW40N65ES5 and IKW75N65ES, the IKW75N65ES5XKSA1 provides optimal balance of current headroom, soft-switching efficiency, and thermal robustness-making it the preferred choice for 3–10 kW industrial inverters requiring both high reliability and high-frequency operation.

Availability

IKW75N65ES5XKSA1 is available at Aetrix Electronics and suitable for resonant converters, uninterruptible power supplies, and welding converters requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IKW75N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IKW75N65ES5XKSA1 belongs to the TRENCHSTOP™ 5 IGBT product line, engineered specifically for high-efficiency, high-frequency industrial power conversion-including UPS, welding, and resonant SMPS-where soft switching, low losses, and ruggedness are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for IKW75N65ES5XKSA1?

The absolute maximum gate-emitter voltage is ±20 V for continuous operation and ±30 V for transient pulses ≤10 µs (duty cycle <1%). Exceeding ±20 V continuously risks gate oxide degradation, while transient spikes beyond ±30 V may cause irreversible gate failure. Gate drive circuits must include clamping (e.g., Zener diodes) and low-inductance layout to prevent ringing-induced overvoltage.

Does IKW75N65ES5XKSA1 require a negative gate voltage for reliable turn-off?

No, IKW75N65ES5XKSA1 achieves robust turn-off with 0 V gate bias; however, applying –5 V to –10 V improves noise immunity and reduces Miller-induced false turn-on in high-di/dt environments. The device's V_GE(th) range (3.2–4.8 V) ensures clear logic separation between on/off states even without negative bias, but negative voltage is recommended for >10 kHz hard-switching applications.

How does the RAPID 1 diode differ from standard FRD diodes in this package?

The RAPID 1 diode integrates lifetime control and optimized carrier distribution to achieve soft reverse recovery (low di/dt during turn-off) and low Q_rr, unlike standard fast recovery diodes that prioritize speed over softness. Measured dirr/dt = –2540 A/µs and trr = 64 ns at 38.5 A confirm its suitability for ZVS circuits-reducing voltage overshoot and snubber losses compared to conventional FRDs with harsh recovery.

Can IKW75N65ES5XKSA1 be used in parallel configurations?

Yes-its positive V_CE(sat) temperature coefficient (increasing from 1.42 V at 25°C to 1.65 V at 125°C) enables natural current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout (≤5 nH loop inductance difference), and thermal coupling via shared heatsink. Derating total current to ≤90% of sum of individual ratings is recommended for long-term reliability.