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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKW75N65ET7XKSA1

Name: IKW75N65ET7XKSA1
Brand: Infineon Technologies
SKU: IKW75N65ET7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKW75N65ET7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKW75N65ET7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO247-3

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Product details

Overview

IKW75N65ET7XKSA1 from Infineon is a 650 V, 75 A low-loss IGBT7 Duopack with integrated ultra-soft fast-recovery anti-parallel diode, designed for high-efficiency industrial power conversion stages in servo drives, solar string inverters, and UPS systems. It features trench-and-fieldstop IGBT technology, 1.65 V typical V_CE(sat) at 75 A/15 V, 175 °C max junction temperature, and JEDEC-qualified industrial reliability.

For engineers reviewing the IKW75N65ET7XKSA1 datasheet, IKW75N65ET7XKSA1 pinout, IKW75N65ET7XKSA1 application, or IKW75N65ET7XKSA1 equivalent, key selection criteria include turn-off energy (1.23 mJ @ 25 °C), reverse recovery charge (1.5 µC), thermal resistance (R_th(j-c) = 0.45 K/W for IGBT), and gate charge (435 nC) under standardized 400 V/75 A switching conditions.

Technical Context

This device integrates a 650 V IGBT and a matched 650 V ultra-soft fast-recovery diode in a single PG-TO247-3 package. The IGBT employs Trench & Fieldstop 7 (IGBT7) process to minimize conduction loss (V_CE(sat)) and tail current, while the diode delivers low Q_rr (1.5 µC typ.) and soft recovery (I_rrm = 22 A, dirr/dt = 480 A/µs) to reduce EMI and voltage overshoot.

It operates across -40 °C to +175 °C junction temperature, supports ±20 V gate drive, and is qualified per JEDEC47/20/22 for industrial applications. Short-circuit withstand time is 5 µs at 330 V and 100 °C, enabling robust protection in motor drive and SMPS designs without external desaturation sensing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Maximum blocking voltage for use in 400 V AC input systems with safety margin.
I_C	75 A - Continuous collector current rating at T_c = 25 °C, defining thermal design baseline.
V_CE(sat)	1.65 V typ. @ 75 A/15 V/25 °C - Directly determines conduction loss and heatsink sizing.
E_off	1.23 mJ @ 400 V/75 A/25 °C - Critical for calculating switching loss and selecting gate driver peak current.
Q_G	435 nC - Determines required gate driver output charge capability and RG optimization.
R_th(j-c) (IGBT)	0.45 K/W - Enables precise junction-to-case thermal modeling for mounting interface design.
T_vj(max)	175 °C - Allows higher ambient operation and derating flexibility in compact enclosures.

Pinout & Package

Package: PG-TO247-3, isolated mounting base, through-hole, RoHS-compliant lead plating. Pin assignment verified per Infineon datasheet Rev. 1.10 (2023-01-26).

Pin/Terminal	Circuit Role	Design Meaning
C (Pin & backside)	Collector	High-side power terminal; backside metal serves as primary heat path and high-current return.
E	Emitter	Low-side reference node for IGBT and cathode connection for integrated diode.
G	Gate	Control input requiring <±20 V rating; sensitive to ESD and layout-induced ringing.

Key Features

Feature	Design Value
Very low V_CE(sat)	1.65 V typ. @ 75 A reduces conduction loss by >15% vs. prior IGBT6 generation at same current.
Short tail current	Negligible tail charge enables faster turn-off and lower E_off, critical for >20 kHz PWM operation.
Ultra-soft diode recovery	Q_rr = 1.5 µC and softness factor (I_rrm/di_r/dt) minimizes voltage spikes and snubber stress.
JEDEC industrial qualification	Validated per JESD47 stress tests and JESD22-A108 temperature cycling, ensuring field reliability.
Integrated Duopack	Single-package co-location of IGBT + diode eliminates parasitic inductance between devices and simplifies PCB layout.

Applications

Servo Drives

Solar String Inverters

Use Scenario: High-bandwidth current control loop in permanent magnet synchronous motor (PMSM) drives with 10–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter bridge, handling bidirectional reactive power and regenerative braking.

Use Value: Low V_CE(sat) and fast soft recovery reduce thermal load and eliminate need for active snubbers in compact motor controllers.

Use Scenario: DC-AC stage in distributed photovoltaic string inverters operating at 600–1000 V DC input.

IC Role / Device Role / Timing Role: High-side switch in unipolar or bipolar modulation topologies, managing MPPT tracking and grid synchronization.

Use Value: 175 °C T_vj(max) and low E_off enable >98.5% efficiency at partial load while maintaining lifetime in outdoor enclosures.

Industrial UPS

Industrial SMPS

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz sine wave output during mains failure.

IC Role / Device Role / Timing Role: Inverter-stage switch handling full-rated kVA load with zero-transfer-time switchover.

Use Value: Short-circuit withstand time (5 µs) and robust gate threshold (4.3–5.7 V) support reliable overcurrent protection without false triggering.

Use Scenario: Primary-side switch in high-power (>3 kW) resonant LLC or phase-shifted full-bridge SMPS for factory automation equipment.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main power transistor, operating at fixed or variable frequency up to 150 kHz.

Use Value: Low C_ies (4460 pF) and optimized Q_G/E_ts ratio improve gate drive efficiency and reduce dead-time sensitivity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT+diode power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5XKSA1	Lower current rating (40 A), reduced E_off (0.72 mJ), same 650 V/175 °C rating and TO247-3 package.	Better suited for <2 kW SMPS or auxiliary inverters where thermal margin exceeds requirement.	Select when system peak current stays below 50 A and board space allows smaller heatsink.
IKW75N65H5XKSA1	Same 75 A/650 V rating but uses older H5 (IGBT5) technology: higher V_CE(sat) (1.85 V typ.), larger E_off (1.85 mJ), no soft diode.	Acceptable for cost-sensitive 10–15 kHz GPD applications where EMI filtering is already present.	Choose only if legacy design reuse or BOM consolidation outweighs 8–12% efficiency gain from ET7.

Compared with IKW40N65ES5XKSA1 and IKW75N65H5XKSA1, the IKW75N65ET7XKSA1 delivers superior conduction–switching trade-off, lower thermal resistance, and integrated soft diode-making it optimal for new high-efficiency industrial inverters where size, efficiency, and reliability are prioritized.

Availability

IKW75N65ET7XKSA1 is available at Aetrix Electronics and suitable for servo drives, solar string inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for IKW75N65ET7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The IGBT7 Duopack product line targets high-efficiency, high-reliability power conversion in industrial motor drives and solar inverters, emphasizing reduced system-level losses and simplified thermal/mechanical design.

FAQ

What is the maximum allowable gate-emitter voltage for IKW75N65ET7XKSA1?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient rating of ±30 V for pulses ≤10 µs. Exceeding ±20 V continuously risks oxide breakdown and irreversible gate damage. Gate drive circuits must include clamping (e.g., Zener diodes) and low-inductance layout to prevent ringing-induced overvoltage.

Does IKW75N65ET7XKSA1 require an external freewheeling diode?

No. The device integrates a matched ultra-soft fast-recovery anti-parallel diode rated for 650 V V_RRM and 75 A continuous forward current. Its low Q_rr (1.5 µC typ.) and soft recovery eliminate need for external diodes in standard inverter bridge configurations.

How does the short-circuit withstand time vary with bus voltage and temperature?

At V_CC ≤ 330 V and T_vj = 100 °C, t_SC is 5 µs; at V_CC ≤ 400 V and T_vj = 150 °C, it drops to 3 µs. This reflects increased power dissipation under fault conditions-protection circuitry must detect and disable gate drive within these limits to prevent destructive failure.

Is the backside collector electrically isolated from the case mounting surface?

Yes. The PG-TO247-3 package uses an electrically isolated copper baseplate. The collector (C) connects to both pin 2 and the entire backside metal surface, which serves as the primary thermal path but remains at collector potential-requiring insulated mounting hardware and dielectric thermal interface material.

IKW75N65ET7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 225 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 75A

Power - Max:: 333 W

Switching Energy:: 2.17mJ (on), 1.23mJ (off)

Input Type:: Standard

Gate Charge:: 435 nC

Td (on/off) @ 25°C:: 28ns/310ns

Test Condition:: 400V, 75A, 4.7Ohm, 15V

Reverse Recovery Time (trr):: 100 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IKW75N65ET7XKSA1 FAQ

1.How can I place an order for IKW75N65ET7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKW75N65ET7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKW75N65ET7XKSA1 reliable?

The price and inventory of IKW75N65ET7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW75N65ET7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKW75N65ET7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW75N65ET7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKW75N65ET7XKSA1?

IKW75N65ET7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKW75N65ET7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKW75N65ET7XKSA1?

For technical support, including IKW75N65ET7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW75N65ET7XKSA1 requirements.

6.How does Aetrix verify that IKW75N65ET7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKW75N65ET7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW75N65ET7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKW75N65ET7XKSA1?

All IKW75N65ET7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW75N65ET7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKW75N65ET7XKSA1 part is unused and in its original packaging.

Return procedure for IKW75N65ET7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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