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Infineon Technologies IKW75N65SS5XKSA1
- Part No.:
- IKW75N65SS5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-3
- Datasheet:
-
IKW75N65SS5XKSA1.pdf
- Description:
- IGBT TRENCH FS 650V 80A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:210
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Product details
Overview
IKW75N65SS5XKSA1 from Infineon is a CoolSiC™ Hybrid Discrete combining a 650 V, 75 A TRENCHSTOP™ 5 IGBT with a co-packed full-rated 6th-generation CoolSiC™ Schottky diode in a single PG-TO247-3 package. It delivers ultra-low switching losses, 1.65 V VCE(sat) at 175 °C, and 1.65 V diode forward voltage at 175 °C for high-efficiency hard-switching industrial power converters.
For engineers reviewing the IKW75N65SS5XKSA1 datasheet, IKW75N65SS5XKSA1 pinout, IKW75N65SS5XKSA1 application, or IKW75N65SS5XKSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.38 K/W IGBT, 0.68 K/W diode), gate charge (164 nC), turn-off energy (1.24 mJ at 150 °C/75 A), and JEDEC-qualified operation up to 175 °C junction temperature.
Technical Context
This hybrid discrete integrates two independently optimized semiconductor dies: a silicon IGBT with TRENCHSTOP™ 5 trench-gate structure for low conduction loss and a silicon carbide Schottky diode with zero reverse recovery charge. The co-packaging eliminates parasitic inductance between devices, enabling precise timing control and reduced EMI in bridge-leg configurations.
The device operates under hard-switching conditions with validated performance at 400 V DC-link, 75 A load current, and gate resistors of 5.6 Ω. Its thermal design supports case temperatures up to 100 °C while maintaining 175 °C maximum junction temperature, with Rth(j-c) values enabling direct heatsink mounting without isolation pads in many industrial layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE max | 650 V - Supports 400 V DC-link systems with 1.6× safety margin for transient overvoltage handling. |
| IC continuous | 75 A at Tc = 100 °C - Enables compact 10–15 kW industrial SMPS designs without forced air cooling. |
| VCE(sat) | 1.65 V at IC = 75 A, Tvj = 175 °C - Reduces conduction loss by ~25% vs. prior-gen silicon IGBTs at full load and high temperature. |
| Eoff | 1.24 mJ at 400 V, 75 A, Tvj = 150 °C - Enables 20–40 kHz hard-switching in UPS inverters with <1.5 W switching loss per device. |
| Rth(j-c) (IGBT) | 0.38 K/W - Allows direct-mount thermal interface to heatsink with ≤38 W dissipation before exceeding 175 °C junction limit. |
| QG | 164 nC - Matches standard 15 V gate drivers (e.g., 1ED020I12FA) without requiring oversized gate buffers. |
| Tvj(max) | 175 °C - Qualified per JEDEC JESD22-A108 for extended lifetime in solar string inverters and industrial UPS. |
Pinout & Package
Package: PG-TO247-3, thermally enhanced through-hole package with isolated collector tab (backside) and standardized lead pitch for industrial PCB layout compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | IGBT gate terminal | Accepts ±20 V gate drive; 164 nC total charge requires controlled dV/dt to avoid spurious turn-on during commutation. |
| C | IGBT collector / diode anode connection point | Electrically tied to backside collector tab; serves as high-side switching node and primary heat path to heatsink. |
| E | IGBT emitter / diode cathode connection point | Common emitter reference for gate drive; must be routed with low-inductance layout to minimize voltage overshoot during turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| Hybrid IGBT + SiC diode integration | Eliminates external anti-parallel diode and reduces layout parasitics, enabling faster switching with lower EMI in half-bridge topologies. |
| Ultra-low switching losses | Combined Eon + Eoff = 1.81 mJ at 150 °C/75 A - enables >98.5% efficiency in 10 kW solar string inverters at 25 kHz. |
| JEDEC-qualified reliability | Validated for industrial SMPS, UPS, and solar applications per JESD22-A108 - supports 15+ year field life under thermal cycling stress. |
| Plug-and-play silicon replacement | Same PG-TO247-3 footprint and gate drive requirements as legacy IGBTs - allows drop-in upgrade without PCB redesign. |
| High-temperature operation | Rated for continuous 175 °C junction temperature with derated current - simplifies thermal management in enclosed industrial enclosures. |
Applications
| Industrial SMPS | Solar String Inverter |
|---|---|
|
Use Scenario: 12 kW telecom rectifier operating at 25 kHz with 400 V DC output. IC Role / Device Role / Timing Role: Half-bridge IGBT switch with integrated anti-parallel diode for synchronous rectification and freewheeling. Use Value: 0.38 K/W IGBT Rth(j-c) enables passive heatsinking; 1.65 V VCE(sat) at 175 °C reduces conduction loss by 1.8 W vs. silicon-only alternatives. |
Use Scenario: Single-phase 8 kW photovoltaic string inverter with unipolar PWM modulation. IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, where SiC diode handles reverse recovery during dead-time. Use Value: Zero reverse recovery charge eliminates diode tail current, reducing switching loss by 0.75 mJ per cycle vs. fast recovery diodes. |
| Industrial UPS | Energy Storage System Charger |
|
Use Scenario: Online double-conversion 15 kVA UPS with 400 V DC-link and battery backup. IC Role / Device Role / Timing Role: Inverter leg switch delivering sinusoidal 230 V AC output with low THD. Use Value: 145 ns turn-off delay at 25 °C ensures tight dead-time control; 175 °C Tvj(max) supports fanless operation during overload events. |
Use Scenario: Bi-directional 10 kW Li-ion battery charger using interleaved LLC + phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge, conducting bidirectional current during regeneration. Use Value: Symmetrical 650 V rating on both IGBT and diode enables robust reverse conduction during regenerative braking without additional components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar hybrid IGBT + SiC diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW40N65ES5XKSA1 | 40 A rated current, lower QG (92 nC), same 650 V rating and CoolSiC™ diode. | Better suited for 5–7 kW designs with tighter gate drive constraints and lower thermal mass. | Select when system peak current ≤45 A and gate driver output <2 A is required. |
| FF600R12ME4_B11 | 1200 V, 600 A dual IGBT module with separate SiC diode; not hybrid-discrete; larger footprint (62 mm × 107 mm). | Targets medium-voltage traction and grid-tie inverters requiring >1000 V blocking and modular scalability. | Choose only when 1200 V rating, higher current, or press-fit packaging is mandatory - not a drop-in replacement. |
Compared with IKW40N65ES5XKSA1, this part delivers 87.5% higher current capability with only 78% higher gate charge; versus FF600R12ME4_B11, it offers TO-247 simplicity and cost advantage for sub-15 kW designs but lacks voltage scalability.
Availability
IKW75N65SS5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, and energy storage system chargers requiring stable component supply across multi-year production cycles.
Supply support for IKW75N65SS5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This part belongs to Infineon's CoolSiC™ Hybrid Discrete product line, engineered to replace silicon-only IGBTs in high-efficiency 650 V hard-switching applications while retaining existing gate drive and thermal infrastructure.
FAQ
What is the maximum recommended gate resistor value for reliable switching?
The datasheet specifies RGon = RGoff = 5.6 Ω for characterization. For reliable operation, Infineon recommends keeping RG ≤ 10 Ω to ensure sufficient gate drive strength and prevent oscillation during high-di/dt transitions. Higher values increase switching time and energy loss, especially at elevated junction temperatures.
Can IKW75N65SS5XKSA1 be used in parallel configurations?
Yes - its positive VCE(sat) temperature coefficient (1.55 V at 125 °C, 1.65 V at 175 °C) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to ensure balanced dynamic behavior across devices.
Is the CoolSiC™ diode in this hybrid discrete rated for reverse recovery?
No - the co-packed diode is a 6th-generation silicon carbide Schottky barrier diode with no minority-carrier injection, resulting in zero reverse recovery charge (Qrr = 0). This eliminates reverse recovery losses and associated EMI, confirmed by measured diode reverse recovery waveforms in the official datasheet Figure 12.
Does this part require negative gate voltage for safe turn-off?
No - the device is fully compatible with 0 V / +15 V gate drive. Its VGE(th) range (3.2–4.8 V) and low IGES (100 nA) ensure robust noise immunity without negative bias. However, applying –5 V during off-state improves dv/dt immunity in high-noise environments like motor drives.
IKW75N65SS5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™ 5
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 80 A
- Current - Collector Pulsed (Icm):
- 300 A
- Vce(on) (Max) @ Vge, Ic:
- 1.7V @ 15V, 75A
- Power - Max:
- 395 W
- Switching Energy:
- 450µJ (on), 750µJ (off)
- Input Type:
- Standard
- Gate Charge:
- 164 nC
- Td (on/off) @ 25°C:
- 22ns/145ns
- Test Condition:
- 400V, 75A, 5.6Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3
IKW75N65SS5XKSA1 FAQ
1.How can I place an order for IKW75N65SS5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKW75N65SS5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKW75N65SS5XKSA1 reliable?
The price and inventory of IKW75N65SS5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKW75N65SS5XKSA1 is usually 5 days.
3.What payment methods are accepted for IKW75N65SS5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKW75N65SS5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKW75N65SS5XKSA1?
IKW75N65SS5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKW75N65SS5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKW75N65SS5XKSA1?
For technical support, including IKW75N65SS5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKW75N65SS5XKSA1 requirements.
6.How does Aetrix verify that IKW75N65SS5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IKW75N65SS5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKW75N65SS5XKSA1 meets industry standards.
7.What is the process for return or replacement of IKW75N65SS5XKSA1?
All IKW75N65SS5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKW75N65SS5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKW75N65SS5XKSA1 part is unused and in its original packaging.
Return procedure for IKW75N65SS5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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