Infineon Technologies IKWH100N65EH7XKSA1

Overview

IKWH100N65EH7XKSA1 from Infineon is a 650 V, 100 A TRENCHSTOP™ IGBT7 co-packed with an Emitter Controlled 7 antiparallel diode in a PG-TO247-3-STD package. It delivers low V_CE(sat) (1.4–1.65 V @ 100 A, 25 °C), fast switching (t_d(off) = 240 ns, t_f = 82 ns), and soft reverse recovery (t_rr = 106 ns, Q_rr = 2.3 µC) for high-efficiency hard-switching inverters and UPS systems.

For engineers reviewing the IKWH100N65EH7XKSA1 datasheet, IKWH100N65EH7XKSA1 pinout, IKWH100N65EH7XKSA1 application, or IKWH100N65EH7XKSA1 equivalent, this device is selected for its verified trade-off between conduction loss, switching loss, and diode softness in 650 V industrial power conversion stages requiring >100 A continuous current and robust thermal performance (R_th(j-c) = 0.27 K/W).

Technical Context

This IGBT7 die employs field-stop trench gate technology with optimized carrier lifetime control to achieve simultaneous reduction in V_CE(sat) and switching losses-confirmed by E_on = 3.58 mJ and E_off = 2.37 mJ at 400 V/100 A/25 °C. Its integrated EC7 diode features graded doping and tailored recombination to suppress voltage overshoot and oscillation during turn-off.

The device is rated for operation up to 175 °C junction temperature, qualified per JEDEC47/20/22 for industrial use, and validated in two-level and three-level topologies including NPC and T-type inverters. Thermal resistance R_th(j-c) = 0.27 K/W (IGBT) and R_th(j-c) = 0.36 K/W (diode) enable high-power density designs with forced-air or liquid cooling.

Key Specifications

Pinout & Package

Package: PG-TO247-3-STD (standard 3-pin TO-247 variant with G-C-E terminal order, non-isolated case, M3 screw mount).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 650 V IGBT applications.

Compared with IKW40N65ES5XKSA1 and IKWH120N65H7XKSA1, the IKWH100N65EH7XKSA1 uniquely balances 100 A continuous current, sub-1.65 V saturation, and <2.4 mJ turn-off energy-making it optimal for 15–20 kW industrial converters where both thermal density and switching fidelity matter.

Availability

IKWH100N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV DC fast charging modules, and photovoltaic string inverters requiring stable component supply, long-lifecycle assurance, and traceable sourcing from Infineon's qualified production line.

Supply support for IKWH100N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-reliability 650 V hard-switching power converters-including UPS, solar inverters, and EV charging-where low loss, soft switching, and ruggedness are mandatory.

FAQ

What is the maximum recommended gate resistor value for reliable turn-off?

The datasheet specifies RG(off) = 10 Ω for characterization, and simulations confirm stable turn-off with RG(off) ≤ 22 Ω at 15 V gate drive. Using >22 Ω increases t_d(off) beyond 300 ns and risks incomplete turn-off under high dv/dt conditions-especially in three-level topologies where cross-conduction must be avoided.

Can IKWH100N65EH7XKSA1 replace older IGBT5 devices in existing designs?

Yes, it is mechanically and electrically pin-compatible with IKWH100N65ES5XKSA1 (IGBT5), but requires gate drive tuning: reduced RG(on) (≤10 Ω) and tighter V_GE regulation (±15 V) due to lower threshold (2.9–4.8 V) and higher transconductance (104 S). Layout parasitics must be minimized to avoid oscillation.

Is the integrated diode suitable for freewheeling in synchronous rectification?

No-the EC7 diode is optimized for antiparallel commutation in hard-switched bridges, not unidirectional freewheeling. Its 1.65 V forward drop at 100 A is higher than dedicated SiC Schottky diodes (0.8–1.2 V), and its reverse recovery behavior is not characterized for ZVS/ZCS synchronous rectifier operation.

What thermal interface material is recommended for mounting?

Infineon recommends thermally conductive silicone grease (e.g., Dow Corning TC-5623) or phase-change pads (e.g., Laird TPCM 600) with 0.1–0.2 mm bond line thickness. Mounting torque must be strictly controlled at 0.6 Nm (M3 screw) to ensure uniform pressure and avoid die cracking or solder fatigue.