Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IKWH20N65WR6XKSA1

Part No.:
IKWH20N65WR6XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKWH20N65WR6XKSA1.pdf
Description:
IGBT TRENCH FS 650V 55A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:148

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IKWH20N65WR6 from Infineon is a 650 V, 20 A TRENCHSTOP™ 5 IGBT with monolithic anti-parallel diode in PG-TO247-3-STD package, optimized for PFC and welding inverters. It features 1.7 V typical VCE(sat) at 20 A/15 V, 0.2 mJ typical Eoff at 25 °C, and enhanced creepage (>4.8 mm) and clearance (>3.4 mm) for industrial isolation compliance.

For engineers reviewing the IKWH20N65WR6 datasheet, IKWH20N65WR6 pinout, IKWH20N65WR6 application, or IKWH20N65WR6 equivalent, this device supports high-reliability switching in high-voltage AC-DC conversion, arc-stable welding power stages, and zero-current-switching (ZCS) topologies where low conduction loss and stable thermal behavior are critical.

Technical Context

This IGBT employs TRENCHSTOP™ 5 WR6 silicon technology with a positive temperature coefficient of VCE(sat), enabling stable parallel operation without current-sharing resistors. Its monolithic diode exhibits soft reverse recovery (trr = 89 ns, Qrr = 1 µC at 25 °C) and low forward voltage (VF = 1.6 V typ. at 8.5 A).

The device is rated for 175 °C maximum junction temperature and delivers 1.1 K/W IGBT Rth(j–c) and 4.7 K/W diode Rth(j–c). Its gate charge (QG = 89 nC) and low Cres (9 pF) support efficient 20–100 kHz switching in hard- and soft-switched converters.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 650 V - Supports 400 VAC input PFC stages with ≥2× safety margin against line surges.
IC 20 A continuous - Delivers 3.2 kW output at 160 VDC bus with 100 °C case temperature.
VCE(sat) 1.7 V typ. @ 20 A/15 V/25 °C - Enables <1.5 W conduction loss per device in 10–20 kHz PFC designs.
Eoff 0.2 mJ typ. @ 400 V/20 A/25 °C - Reduces turn-off loss by ~35% vs. prior-generation TRENCHSTOP™ 4 devices.
trr 89 ns typ. @ 10 A/400 V/25 °C - Minimizes diode-induced voltage spikes and EMI in fast-switching welder H-bridges.
Rth(j–c) (IGBT) 1.1 K/W - Allows 140 W dissipation at 25 °C case, supporting compact heatsink integration in space-constrained welders.
Creepage distance >4.8 mm - Meets reinforced insulation requirements for industrial 600 V systems per IEC 61800-5-1.

Pinout & Package

PG-TO247-3-STD package with isolated mounting hole, 4.8 mm minimum pin-to-pin creepage, and 3.4 mm minimum pin-to-pin clearance. Standard three-terminal configuration: Collector (C), Gate (G), Emitter (E).

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main high-side power terminal Connected to DC bus (+) in half-bridge; carries full load current and withstands 650 V blocking.
Gate (G) Control input Receives 15 V logic-level drive; 89 nC total charge requires ≤24 Ω gate resistor for 100 ns switching transitions.
Emitter (E) Power return and reference node Serves as common source for IGBT and diode; internal emitter inductance limited to 13 nH (5 mm from case).

Key Features

Feature Design Value
Enhanced creepage & clearance Pin-to-pin creepage >4.8 mm and clearance >3.4 mm enable direct use in pollution degree 3 environments without conformal coating.
Monolithic diode Optimized soft-recovery diode integrated in same die reduces layout complexity and stray inductance in PFC boost diodes.
Positive VCE(sat) tempco Enables stable current sharing across paralleled devices without external ballasting resistors or active current sensing.
Low Esw temperature dependence Eon increases only 24% and Eoff increases 75% from 25 °C to 175 °C - simplifies thermal derating in welder duty cycles.
JEDEC47/20/22 qualified Validated for industrial applications including temperature cycling, humidity bias, and high-temperature operating life tests.

Applications

Industrial PFC Modules IGBT-Based Welding Inverters

Use Scenario: Three-phase active front-end rectifiers in servo drives and UPS systems requiring >98% efficiency and THD <5%.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost topology; operates at 20–50 kHz with synchronous gate control.

Use Value: Low VCE(sat) and stable Eoff reduce thermal stress during continuous 100% load, extending module lifetime beyond 100,000 hours.

Use Scenario: Primary-side inverter in 3–5 kVA IGBT welders with digital arc control and adaptive droop compensation.

IC Role / Device Role / Timing Role: Half-bridge switch driving transformer primary; commutates at 20–30 kHz with ZCS-assisted turn-on.

Use Value: Soft-recovery diode minimizes voltage overshoot during reverse recovery, preventing false triggering and improving arc stability.

ZCS Resonant Converters High-Voltage DC-DC Isolators

Use Scenario: Zero-current-switching LLC resonant converters in battery charging stations for EVs and energy storage.

IC Role / Device Role / Timing Role: Main switching element in asymmetric half-bridge; leverages natural current zero-crossing for lossless turn-on.

Use Value: Low Cres (9 pF) and predictable trr ensure precise timing of resonant current zero-crossing, reducing dead-time sensitivity.

Use Scenario: Isolated DC-DC converters in railway traction auxiliary power supplies (1500 VDC input).

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; blocks 650 V while handling 20 A peak currents.

Use Value: Reinforced creepage (>4.8 mm) satisfies EN 50124-1 for railway rolling stock, eliminating need for additional isolation barriers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKW20N65ES5 Same 650 V/20 A rating but TRENCHSTOP™ 5 ES5; lower VCE(sat) (1.55 V typ.) but higher Eoff (0.28 mJ) and no enhanced creepage. Lacks >4.8 mm creepage; unsuitable for pollution degree 3 industrial enclosures without additional spacing. Select when lowest conduction loss is prioritized over isolation robustness and board-level contamination resistance.
FGH20N60UF 600 V/20 A device with ultrafast diode; VCE(sat) = 1.8 V, Eoff = 0.22 mJ, but only 3.2 mm creepage and JEDEC JESD47 qualification only. Not qualified for industrial extended-life testing; limited to commercial-grade ambient conditions. Choose for cost-sensitive 400 VAC systems where full industrial reliability validation is not required.

Compared with IKW20N65ES5 and FGH20N60UF, IKWH20N65WR6 uniquely combines 650 V rating, enhanced creepage, JEDEC industrial qualification, and soft-recovery diode-making it the only option for high-isolation, long-lifetime PFC and welding applications demanding both electrical and environmental robustness.

Availability

IKWH20N65WR6 is available at Aetrix Electronics and suitable for industrial PFC modules, IGBT-based welding inverters, ZCS resonant converters, and high-voltage DC-DC isolators requiring stable component supply under extended temperature and contamination exposure.

Supply support for IKWH20N65WR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ 5 WR6 product line, engineered specifically for high-reliability industrial switching applications where enhanced isolation, thermal stability, and soft-recovery performance are mandatory in harsh environments.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 24 Ω for characterization. For 20 kHz operation with 15 V gate drive, a 15–27 Ω non-inductive resistor ensures td(on) ≤ 25 ns and td(off) ≤ 290 ns across –40 to 175 °C. Higher values increase switching losses and risk shoot-through in half-bridge configurations due to slower turn-off.

Can IKWH20N65WR6 be used in parallel without current-sharing components?

Yes. Its positive temperature coefficient of VCE(sat) ensures inherent current balancing: as one device heats up, its VCE(sat) rises, reducing its share of total current. Parallel operation has been validated with matched gate drive and symmetrical PCB layout-no external ballast resistors required.

Does the monolithic diode support bidirectional conduction in synchronous rectification?

No. The integrated diode is unidirectional and optimized for anti-parallel freewheeling-not synchronous rectification. Its soft recovery and low Qrr make it ideal for PFC boost diodes and welder inverter freewheel paths, but it lacks the fast turn-on characteristics needed for controlled rectification.

What thermal interface material is recommended for mounting?

Infineon recommends thermally conductive silicone grease (e.g., Dow Corning TC-5123) or phase-change pads (e.g., Henkel Gap Pad VT-100) with 0.6 Nm M3 screw torque. Avoid thermal tapes-they increase Rth(j–c) by >0.3 K/W and compromise long-term bond integrity under thermal cycling.

IKWH20N65WR6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
Trenchstop™ 5
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
55 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 20A
Power - Max:
136 W
Switching Energy:
-
Input Type:
Standard
Gate Charge:
97 nC
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-32

IKWH20N65WR6XKSA1 FAQ

1.How can I place an order for IKWH20N65WR6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKWH20N65WR6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH20N65WR6XKSA1 reliable?

The price and inventory of IKWH20N65WR6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH20N65WR6XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH20N65WR6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH20N65WR6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKWH20N65WR6XKSA1?

IKWH20N65WR6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH20N65WR6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH20N65WR6XKSA1?

For technical support, including IKWH20N65WR6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH20N65WR6XKSA1 requirements.

6.How does Aetrix verify that IKWH20N65WR6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH20N65WR6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH20N65WR6XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH20N65WR6XKSA1?

All IKWH20N65WR6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH20N65WR6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH20N65WR6XKSA1 part is unused and in its original packaging.

Return procedure for IKWH20N65WR6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKWH20N65WR6XKSA1 Tags

  • IKWH20N65WR6XKSA1
  • IKWH20N65WR6XKSA1 PDF
  • IKWH20N65WR6XKSA1 Datasheet
  • IKWH20N65WR6XKSA1 Specifications
  • IKWH20N65WR6XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IKWH20N65WR6XKSA1
  • Buy IKWH20N65WR6XKSA1
  • IKWH20N65WR6XKSA1 Price
  • IKWH20N65WR6XKSA1 Distributor
  • IKWH20N65WR6XKSA1 Supplier
  • IKWH20N65WR6XKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER