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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKWH30N65WR5XKSA1

Name: IKWH30N65WR5XKSA1
Brand: Infineon Technologies
SKU: IKWH30N65WR5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKWH30N65WR5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKWH30N65WR5XKSA1.pdf

Description:: IGBT TRENCH FS 650V 75A TO247-3

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Product details

Overview

IKWH30N65WR5XKSA1 from Infineon is a 650 V, 30 A TRENCHSTOP™ 5 IGBT with monolithic anti-parallel diode in PG-TO247-3-STD-N4.8 package, featuring >4.8 mm pin-to-pin creepage and >3.4 mm clearance for contamination-resistant industrial PFC and welding inverters.

For engineers reviewing the IKWH30N65WR5XKSA1 datasheet, IKWH30N65WR5XKSA1 pinout, IKWH30N65WR5XKSA1 application, or IKWH30N65WR5XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature (1.4–1.65 V), low E_off (0.4–0.7 mJ), positive V_CE(sat) temperature coefficient for parallel operation, and integrated diode optimized for zero-current-switching (ZCS) topologies.

Technical Context

This IGBT employs TRENCHSTOP™ 5 WR5 silicon technology with enhanced field-stop structure, delivering low conduction loss (V_CE(sat) = 1.4 V typ. @ 25°C) and low switching energy (E_ts = 1.27 mJ @ 25°C). Its monolithic diode exhibits low Q_rr (1.9 µC) and soft recovery (I_rrm = 28.6 A), enabling high-efficiency ZCS and resonant converters.

The PG-TO247-3-STD-N4.8 package provides reinforced insulation via extended creepage (>4.8 mm) and clearance (>3.4 mm), meeting stringent industrial safety requirements. Thermal resistance R_th(j-c) is 0.8 K/W for the IGBT and 3.3 K/W for the diode, supporting high-power density designs up to 175°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V maximum blocking voltage - supports 400 V AC input PFC stages with 1.6× safety margin.
I_C	30 A continuous collector current at T_c = 100°C - enables compact heatsink sizing in 3–5 kW industrial welders.
V_CE(sat)	1.4–1.65 V across -40 to 175°C - ensures stable conduction loss and inherent current sharing in paralleled configurations.
E_off	0.4–0.7 mJ at 400 V, 30 A - reduces switching losses in high-frequency (>20 kHz) resonant welding inverters.
Q_rr	1.9–2.6 µC for anti-parallel diode - minimizes reverse recovery stress and EMI in ZCS-PFC circuits.
R_th(j-c)	0.8 K/W (IGBT), 3.3 K/W (diode) - allows direct thermal coupling to heatsink without interface material degradation risk.
C_ies	3230 pF at V_CE = 25 V - defines gate drive strength requirement (≥1.5 A peak) for <45 ns turn-on delay.

Pinout & Package

Package: PG-TO247-3-STD-N4.8 - enhanced creepage/clearance variant of standard TO-247, with 4.8 mm minimum distance between collector and emitter pins, rated for industrial pollution degree 3.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power switch terminal	Connected to DC bus (+); handles full load current and 650 V blocking; electrically isolated by >4.8 mm creepage path.
Gate (G)	Control input for IGBT channel	Receives 15 V logic-level drive; requires 133 nC total charge; sensitive to ESD (±30 V transient rating).
Emitter (E)	Power return and reference node	Serves as common source for IGBT and anti-parallel diode; carries bidirectional current; grounded to heatsink in most topologies.

Key Features

Feature	Design Value
Enhanced creepage & clearance	Pin-to-pin creepage >4.8 mm and clearance >3.4 mm - eliminates need for conformal coating in humid or dusty industrial environments.
Monolithic anti-parallel diode	Optimized soft-recovery diode with Q_rr = 1.9 µC and I_rrm = 28.6 A - enables efficient ZCS operation without external snubbers.
Positive V_CE(sat) tempco	V_CE(sat) increases with temperature (1.4 V → 1.65 V from 25°C to 175°C) - enables natural current balancing in paralleled IGBTs without external ballasting.
Low E_sw at high T_vj	E_off rises only 75% from 25°C to 175°C (0.4 → 0.7 mJ) - maintains efficiency in thermally constrained welding enclosures.
JEDEC-qualified reliability	Qualified per JEDEC47/20/22 for industrial applications - validated for 1000+ thermal cycles and 1000 h HTOL at 175°C.

Applications

Industrial PFC Rectifiers

IGBT-Based Welding Inverters

Use Scenario: Three-phase active front-end rectifier in 5 kW servo drives requiring >98% efficiency and THD <5%.

IC Role / Device Role / Timing Role: High-side switching element in Vienna or T-type PFC topology; operates at 20–50 kHz with unidirectional current flow.

Use Value: Low V_CE(sat) and soft diode recovery reduce conduction + switching losses by 18% vs. legacy TRENCHSTOP™ 4, enabling passive cooling.

Use Scenario: Primary-side inverter in 3.5 kW IGBT-based MIG welder with resonant ZCS transition.

IC Role / Device Role / Timing Role: Main switching device in half-bridge configuration; conducts during energy transfer phase and commutates via diode ZCS.

Use Value: Monolithic diode's low Q_rr and controlled I_rrm suppress voltage overshoot during turn-off, eliminating need for RC snubbers.

ZCS Resonant Converters

High-Voltage DC-DC Isolators

Use Scenario: 1 kW LLC resonant DC-DC stage in battery test equipment requiring zero-voltage/zero-current switching.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in secondary-side full-bridge; leverages diode for natural ZCS turn-on.

Use Value: Diode's soft recovery and low forward drop (1.3 V @ 12 A) cut conduction loss by 32% versus discrete SiC Schottky alternatives at 175°C.

Use Scenario: 650 V isolation barrier in photovoltaic string inverters with rapid shutdown compliance.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology; blocks 650 V DC while handling 30 A peak current.

Use Value: Extended creepage (>4.8 mm) meets IEC 62109 creepage requirements for PV system DC side without additional spacing hardware.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW30N65WR5	Same die, identical electrical specs, but in standard PG-TO247-3-STD (no enhanced creepage); R_th(j-c) = 0.8 K/W unchanged.	Lacks >4.8 mm creepage - unsuitable for pollution degree 3 environments or high-humidity welding enclosures.	Select when cost sensitivity outweighs contamination risk and board-level creepage control is feasible.
IKWH40N65WR5	Higher I_C rating (40 A), same V_CE, slightly higher V_CE(sat) (1.45–1.7 V), larger die area; R_th(j-c) = 0.65 K/W.	Enables derated 30 A operation with 20% lower thermal resistance - better for forced-air-cooled 5 kW welders.	Choose for higher power headroom or improved thermal margin; requires PCB layout revision due to larger footprint.

Compared with IKW30N65WR5, IKWH30N65WR5XKSA1 adds certified creepage for harsh environments without sacrificing switching performance; versus IKWH40N65WR5, it offers optimal cost–size balance for 3–4 kW industrial PFC where thermal margin is sufficient.

Availability

IKWH30N65WR5XKSA1 is available at Aetrix Electronics and suitable for industrial PFC rectifiers, IGBT-based welding inverters, ZCS resonant converters, and high-voltage DC-DC isolators requiring stable component supply under extended temperature and contamination stress.

Supply support for IKWH30N65WR5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ 5 WR5 product line, engineered specifically for high-reliability industrial switching applications demanding robustness against humidity, dust, and thermal cycling in PFC, welding, and resonant converter systems.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG_on = RG_off = 27 Ω for characterization. For 30 A operation at 20 kHz, a 15–33 Ω gate resistor balances switching speed (td_on ≈ 41 ns) and EMI suppression. Exceeding 47 Ω increases E_on by >25% and risks shoot-through in bridge configurations due to slowed turn-off.

Can this IGBT be paralleled without external current-sharing components?

Yes - its positive V_CE(sat) temperature coefficient (1.4 V @ 25°C → 1.65 V @ 175°C) enables inherent current balancing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling to ensure ΔT_vj < 10°C between devices; no ballast resistors needed.

Is the anti-parallel diode suitable for freewheeling in hard-switched topologies?

No - the diode is optimized for soft-recovery ZCS applications (Q_rr = 1.9 µC, I_rrm = 28.6 A), not hard-switched freewheeling. In non-resonant buck or flyback circuits, its recovery tail causes excessive voltage overshoot and EMI; use discrete ultrafast diodes instead.

What is the maximum allowable case temperature for continuous 30 A operation?

At I_C = 30 A, the datasheet limits case temperature to 100°C for continuous operation. This corresponds to a maximum junction temperature of 175°C given R_th(j-c) = 0.8 K/W. Derating is required above 100°C case - e.g., 25 A max at T_c = 115°C.

IKWH30N65WR5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5 WR5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 75 A

Current - Collector Pulsed (Icm):: 90 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 30A

Power - Max:: 190 W

Switching Energy:: 870µJ (on), 400µJ (off)

Input Type:: Standard

Gate Charge:: 133 nC

Td (on/off) @ 25°C:: 41ns/398ns

Test Condition:: 400V, 30A, 27Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-32

IKWH30N65WR5XKSA1 FAQ

1.How can I place an order for IKWH30N65WR5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKWH30N65WR5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH30N65WR5XKSA1 reliable?

The price and inventory of IKWH30N65WR5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH30N65WR5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH30N65WR5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH30N65WR5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKWH30N65WR5XKSA1?

IKWH30N65WR5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH30N65WR5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH30N65WR5XKSA1?

For technical support, including IKWH30N65WR5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH30N65WR5XKSA1 requirements.

6.How does Aetrix verify that IKWH30N65WR5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH30N65WR5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH30N65WR5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH30N65WR5XKSA1?

All IKWH30N65WR5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH30N65WR5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH30N65WR5XKSA1 part is unused and in its original packaging.

Return procedure for IKWH30N65WR5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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