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Infineon Technologies IKWH30N67PR7XKSA1

Part No.:
IKWH30N67PR7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKWH30N67PR7XKSA1.pdf
Description:
IKWH30N67PR7XKSA1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:225

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Product details

Overview

IKWH30N67PR7 from Infineon is a reverse-conducting TRENCHSTOP™ IGBT 7 PR7 rated at 670 V VCE, 30 A IC, and 1.4 V typical VCEsat at 25°C, designed specifically for the boost PFC stage in high-frequency, high-power AC-DC converters. It integrates an optimized monolithic diode, features low EMI due to controlled dv/dt, and supports industrial-grade operation up to 175°C junction temperature.

For engineers reviewing the IKWH30N67PR7 datasheet, IKWH30N67PR7 pinout, IKWH30N67PR7 application, or IKWH30N67PR7 equivalent, this device is selected for high-efficiency, high-reliability PFC designs where thermal stability, parallel-switching capability, and reduced electromagnetic interference are critical design requirements.

Technical Context

This RC-IGBT combines a 670 V IGBT die with a co-packaged, optimized fast-recovery diode in a single PG-TO247-3-U04 package - enabling compact, low-parasitic boost PFC topologies without external anti-parallel diodes. Its positive temperature coefficient of VCEsat ensures inherent current sharing during parallel operation.

The device delivers stable switching energy (Eon = 0.45 mJ, Eoff = 0.26 mJ at 25°C) and low gate charge (QG = 85 nC), supporting >100 kHz switching while maintaining low conduction loss and predictable thermal behavior across –40°C to 175°C.

Key Specifications

ParameterValue and Actual Design Meaning
VCE max670 V - Enables use in 400 V AC input PFC stages with 2× safety margin against line transients
IC continuous30 A @ Tc = 100°C - Sustains full-rated output power in thermally constrained heatsink environments
VCEsat typ1.4 V @ 30 A, 25°C - Reduces conduction loss by ~25% vs. prior-generation 650 V IGBTs in same package
Eoff0.26 mJ @ 400 V, 30 A, 25°C - Enables efficient high-frequency switching with minimal turn-off loss penalty
dv/dt immunityImproved EMI behavior - Lower parasitic oscillation and reduced filter component count in EMI-compliant designs
Tvj max175°C - Qualified per JEDEC47/20/22 for industrial applications with extended lifetime under thermal stress
QG85 nC - Matches standard 15 V gate drivers; enables robust gate control with moderate RG values (e.g., 9.8 Ω)

Pinout & Package

Supplied in PG-TO247-3-U04 package with creepage >4.8 mm and clearance >3.4 mm - compliant with reinforced insulation requirements for industrial PFC modules.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current pathConnected to boost inductor output; carries full switched current and withstands 670 V blocking
Emitter (E)Reference node for IGBT and diodeShared emitter terminal for both IGBT and integrated diode - simplifies PCB layout and reduces stray inductance
Gate (G)Control inputStandard MOS-compatible gate requiring ±20 V rating; positive tempco of VCEsat enables safe paralleling

Key Features

FeatureDesign Value
Reverse-conducting architectureMonolithic integration of IGBT + optimized diode eliminates discrete anti-parallel diode and associated layout complexity
Low VCEsat with stable tempco1.4 V typ @ 25°C, rising only to 1.7 V @ 175°C - enables consistent efficiency across operating temperature range
ESD robustness2 kV HBM - improves handling reliability and reduces risk of gate oxide damage during assembly
EMI-optimized switchingReduced dv/dt overshoot and ringing - lowers conducted emissions and eases compliance with CISPR-11 Class B
Parallel switching supportPositive VCEsat temperature coefficient - provides natural current balancing without external current-sharing resistors

Applications

Residential Air ConditioningCommercial HVAC Systems

Use Scenario: Single-phase 2–5 kW PFC front-end in inverter-driven split-system air conditioners.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; operates at 65–100 kHz.

Use Value: Enables >98% PFC efficiency at full load while meeting IEC 61000-3-2 harmonic limits and reducing heatsink size by 30% vs. 650 V Si IGBT alternatives.

Use Scenario: Three-phase 10–30 kW PFC stage in rooftop HVAC units with active rectification.

IC Role / Device Role / Timing Role: Boost switch in interleaved multi-phase PFC; handles 30 A RMS current with peak surge tolerance.

Use Value: Stable VCEsat over –25°C to +70°C ambient ensures consistent power delivery across seasonal temperature swings without derating.

Industrial Motor DrivesRenewable Energy Inverters

Use Scenario: Regenerative braking PFC recovery circuit in servo drives with bidirectional energy flow.

IC Role / Device Role / Timing Role: Reverse-conducting switch enabling efficient energy return to DC bus during deceleration.

Use Value: Integrated diode eliminates need for external freewheeling path, reducing bill-of-materials and improving system reliability under frequent transient loading.

Use Scenario: Grid-tied solar string inverters with active PFC and wide-input-voltage-range MPPT.

IC Role / Device Role / Timing Role: Primary boost switch in high-voltage DC link generation; blocks 670 V and sustains 30 A average current.

Use Value: Low Eoff and stable Esw across temperature allow fixed-frequency operation at 80 kHz without thermal runaway risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKWH40N65RH5650 V rating, 40 A IC, higher QG (105 nC), no integrated diodeRequires external anti-parallel diode; better suited for lower-voltage, higher-current hard-switched applicationsSelect when system voltage stays ≤380 V AC and discrete diode layout is acceptable
IDW30E65E7Standalone 650 V/30 A SiC Schottky diode - not an RC-IGBT; complementary part referenced in datasheet for hybrid PFCUsed with separate IGBT in hybrid configurations; lacks integrated switching controlChoose only as diode replacement in legacy designs using discrete IGBT + diode topology

Compared with IKWH40N65RH5 and IDW30E65E7, the IKWH30N67PR7 uniquely delivers monolithic RC functionality at 670 V, enabling smaller footprint, lower EMI, and simplified thermal design - making it optimal for next-gen compact, high-frequency PFC stages.

Availability

IKWH30N67PR7 is available at Aetrix Electronics and suitable for residential air conditioning, commercial HVAC systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKWH30N67PR7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT 7 PR7 product line targets high-efficiency, high-frequency PFC and soft-switching applications - engineered to replace older IGBT generations with superior EMI performance, thermal stability, and system-level integration.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 9.8 Ω for characterization, and recommends keeping total gate loop inductance below 30 nH. For 100 kHz operation with <150 ns total switching time, a 10 Ω non-inductive gate resistor is optimal - higher values increase switching losses and reduce dv/dt control, while lower values risk gate oscillation and overshoot.

Does IKWH30N67PR7 require a negative gate voltage for turn-off?

No. The device is fully compatible with 0 V / +15 V gate drive. Its VGEth ranges from 3.2 V to 4.8 V, and it exhibits no shoot-through risk with zero-volt turn-off. Negative gate bias is unnecessary and not required for stable operation in standard boost PFC circuits.

Can IKWH30N67PR7 be used in hard-switched ZVS or ZCS topologies?

Yes - its low Eoff (0.26 mJ), controlled dv/dt, and stable Esw vs. temperature make it suitable for resonant and quasi-resonant PFC topologies. However, the integrated diode's reverse recovery characteristics are optimized for CCM boost, not ultra-fast ZVS transitions; verify diode reverse recovery energy in simulation before deployment.

Is the PG-TO247-3-U04 package RoHS and REACH compliant?

Yes. Infineon certifies the PG-TO247-3-U04 package for IKWH30N67PR7 as fully RoHS 2011/65/EU and REACH SVHC-compliant, with lead-free matte tin plating on leads and halogen-free molding compound - verified in the official material declaration document INF-1002-01-01.

IKWH30N67PR7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TRENCHSTOP™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
670 V
Current - Collector (Ic) (Max):
71 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
1.75V @ 15V, 30A
Power - Max:
179 W
Switching Energy:
450µJ (on), 260µJ (off)
Input Type:
Standard
Gate Charge:
85 nC
Td (on/off) @ 25°C:
12ns/124ns
Test Condition:
400V, 30A, 9.8Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-32

IKWH30N67PR7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKWH30N67PR7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH30N67PR7XKSA1 reliable?

The price and inventory of IKWH30N67PR7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH30N67PR7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH30N67PR7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH30N67PR7XKSA1 transactions.

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IKWH30N67PR7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH30N67PR7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH30N67PR7XKSA1?

For technical support, including IKWH30N67PR7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH30N67PR7XKSA1 requirements.

6.How does Aetrix verify that IKWH30N67PR7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH30N67PR7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH30N67PR7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH30N67PR7XKSA1?

All IKWH30N67PR7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH30N67PR7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH30N67PR7XKSA1 part is unused and in its original packaging.

Return procedure for IKWH30N67PR7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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