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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKWH40N65EH7XKSA1

Name: IKWH40N65EH7XKSA1
Brand: Infineon Technologies
SKU: IKWH40N65EH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKWH40N65EH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKWH40N65EH7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO247-3

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Product details

Overview

IKWH40N65EH7XKSA1 from Infineon is a 650 V, 40 A TRENCHSTOP™ IGBT7 co-packed with an emitter-controlled 7 diode in PG-TO247-3-STD package. It delivers low V_CE(sat) (1.65 V typ. @ 25°C), fast switching (t_d(off) = 141 ns), and soft reverse recovery (t_rr = 74 ns), enabling high-efficiency hard-switching in industrial UPS and EV-charging inverters.

For engineers reviewing the IKWH40N65EH7XKSA1 datasheet, IKWH40N65EH7XKSA1 pinout, IKWH40N65EH7XKSA1 application, or IKWH40N65EH7XKSA1 equivalent, key selection criteria include V_CE(sat) vs. temperature stability, diode Q_rr and E_rec at 175°C, gate charge (81 nC), and thermal resistance (R_th(j-c) = 0.54 K/W for IGBT).

Technical Context

This IGBT7 device uses trench-gate field-stop technology optimized for 650 V hard-switching topologies, featuring a monolithic integration of the IGBT and a soft-recovery antiparallel diode on a single die. Its gate threshold voltage (V_GE(th) = 2.9–4.8 V) and transconductance (g_fs = 56 S) support robust gate drive design across -40°C to 175°C junction operation.

The integrated diode exhibits low forward voltage (V_F = 1.65 V typ. @ 25°C), controlled reverse recovery (Q_rr = 0.9 µC @ 25°C), and negative dI_rr/dt (-1070 A/µs), minimizing voltage overshoot and EMI in two-level and three-level converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - supports DC bus voltages up to 600 V in industrial and EV-charging applications
I_C continuous	40 A @ T_c = 100°C - enables compact heatsink sizing in high-power density designs
V_CE(sat)	1.65 V typ. @ I_C = 40 A, V_GE = 15 V, T_vj = 25°C - reduces conduction loss and thermal stress
E_off	0.42 mJ @ V_CC = 400 V, T_vj = 25°C - lowers switching loss in 16–20 kHz hard-switched inverters
t_rr	74 ns @ V_R = 400 V, I_F = 40 A, T_vj = 25°C - ensures clean commutation with minimal voltage spike
R_th(j-c) (IGBT)	0.54 K/W - allows direct mounting to heatsink with predictable thermal margin
Q_G	81 nC - defines gate driver current requirement (≥ ±2 A peak for <100 ns turn-on)

Pinout & Package

Package: PG-TO247-3-STD (standard through-hole, 3-pin, isolated mounting hole). Pin assignment verified per Infineon datasheet Rev. 1.20 (2023-11-13): Collector (C), Gate (G), Emitter (E) - arranged linearly with C at left, G center, E right when viewed with marking side up and leads down.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	High-side power output node	Connects to DC+ rail or bridge leg; carries full load current and withstands 650 V blocking
Gate (G)	Control input for IGBT channel	Requires 15 V drive (±20 V absolute max); sensitive to noise due to 2016 pF C_ies
Emitter (E)	Power return and reference node	Serves as common source for IGBT and diode; critical for low-inductance Kelvin sensing layout

Key Features

Feature	Design Value
TRENCHSTOP™ IGBT7 silicon	Enables lower V_CE(sat) and faster switching than IGBT4/5, reducing total losses by ≥15% in 10–20 kHz inverters
Emitter-Controlled 7 diode	Delivers soft, low-Q_rr recovery (0.9 µC) and low E_rec (0.16 mJ), suppressing snubber requirements
Humidity robustness	Qualified per JEDEC J-STD-020 moisture sensitivity level MSL 1 - supports lead-free reflow without popcorn failure
Optimized for two/three-level topologies	Stable switching behavior under unbalanced voltage sharing and high dv/dt (≥10 kV/µs)
PSpice models available	Includes validated behavioral models for loss estimation and thermal simulation in industrial design workflows

Applications

Industrial UPS

EV-Charging Station

Use Scenario: Online double-conversion UPS delivering clean 3-phase AC output during grid outage or sag.

IC Role / Device Role / Timing Role: IGBT switch in 3-level NPC inverter stage; diode handles freewheeling and regeneration.

Use Value: Low V_CE(sat) and soft diode recovery reduce system losses by ~8% vs. IGBT5, extending battery runtime.

Use Scenario: 11–22 kW AC charging module converting 3-phase grid to regulated DC for on-board charger input.

IC Role / Device Role / Timing Role: High-side switch in Vienna rectifier PFC stage; diode conducts during zero-crossing intervals.

Use Value: 74 ns t_rr and -1070 A/µs dI_rr/dt minimize voltage overshoot, eliminating need for RC snubbers.

String Inverter

Induction Welding Power Supply

Use Scenario: 10–30 kW photovoltaic string inverter feeding grid via transformerless topology.

IC Role / Device Role / Timing Role: Main switching device in H-bridge inverter leg; diode provides bidirectional current path during modulation.

Use Value: 0.54 K/W R_th(j-c) enables air-cooled design at 15 kHz switching, reducing fan count and acoustic noise.

Use Scenario: Medium-frequency (20–50 kHz) resonant inverter supplying 50–200 kW to welding transformer primary.

IC Role / Device Role / Timing Role: Half-bridge switch handling high di/dt (>5 kA/µs) during arc ignition and maintenance.

Use Value: Optimized gate charge (81 nC) and low C_res (8.6 pF) ensure precise timing control and reduced shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5	IGBT5 generation; higher V_CE(sat) (1.85 V typ.), slower t_d(off) (210 ns), no integrated Emitter-Controlled diode	Lower cost but requires external ultrafast diode; less suitable for >15 kHz hard switching	Select if cost-sensitive and operating ≤12 kHz with proven snubber design
FGH40N60UF	600 V rating; higher V_CE(sat) (1.9 V), larger Q_G (105 nC), TO-247-3 package with same footprint	Limited to 550 V DC bus; higher gate drive power and thermal demand at same current	Select only for legacy 600 V systems where 650 V margin is not required

Compared with IKW40N65ES5 and FGH40N60UF, IKWH40N65EH7XKSA1 offers superior efficiency at elevated temperature and frequency due to its IGBT7 cell design and integrated soft diode-critical for thermally constrained EV-charging and UPS modules.

Availability

IKWH40N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging stations, and string inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for IKWH40N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This part belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-reliability hard-switching in industrial and renewable energy systems operating up to 175°C junction temperature.

FAQ

What is the maximum recommended gate resistor for reliable turn-off?

The datasheet specifies R_G(off) = 12.5 Ω for characterization. For reliable turn-off with margin against Miller-induced false triggering, Infineon recommends R_G(off) between 10 Ω and 22 Ω, depending on layout parasitics and required t_d(off) control. Values below 8 Ω increase risk of oscillation; above 33 Ω may exceed safe SOA limits at high dv/dt.

Is this device suitable for use in a 3-level NPC inverter?

Yes-IKWH40N65EH7XKSA1 is explicitly qualified for two- and three-level topologies. Its low C_res (8.6 pF), stable V_GE(th) over temperature, and soft diode recovery enable balanced voltage sharing and low EMI in NPC configurations operating up to 20 kHz with 600 V DC link.

Does the integrated diode require separate gate control?

No-the antiparallel diode is a passive, emitter-controlled 7 structure monolithically integrated with the IGBT die. It operates automatically during freewheeling and reverse conduction without any additional control signals or external drivers.

What is the humidity sensitivity level (MSL) and reflow profile compliance?

IKWH40N65EH7XKSA1 is rated MSL 1 per JEDEC J-STD-020, meaning it is non-moisture-sensitive and can undergo unlimited floor life and standard lead-free reflow (peak 260°C for 10 s) without baking or special handling.

IKWH40N65EH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 40A

Power - Max:: 208 W

Switching Energy:: 970µJ (on), 420µJ (off)

Input Type:: Standard

Gate Charge:: 81 nC

Td (on/off) @ 25°C:: 18ns/141ns

Test Condition:: 400V, 40A, 12.5Ohm, 15V

Reverse Recovery Time (trr):: 74 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-32

IKWH40N65EH7XKSA1 FAQ

1.How can I place an order for IKWH40N65EH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKWH40N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH40N65EH7XKSA1 reliable?

The price and inventory of IKWH40N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH40N65EH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH40N65EH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH40N65EH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKWH40N65EH7XKSA1?

IKWH40N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH40N65EH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH40N65EH7XKSA1?

For technical support, including IKWH40N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH40N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKWH40N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH40N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH40N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH40N65EH7XKSA1?

All IKWH40N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH40N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH40N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKWH40N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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