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Infineon Technologies IKWH40N65WR6XKSA1

Part No.:
IKWH40N65WR6XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKWH40N65WR6XKSA1.pdf
Description:
IGBT TRENCH 650V 75A TO247-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:181

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Product details

Overview

IKWH40N65WR6 from Infineon is a 650 V, 40 A TRENCHSTOP™ 5 IGBT with integrated fast recovery diode in PG-TO247-3-STD package. It delivers low VCE(sat) (1.55–1.85 V at 40 A/15 V), very low Eoff (0.57–0.89 mJ), and enhanced creepage (>4.8 mm) and clearance (>3.4 mm) for industrial PFC and welding inverters operating up to 175 °C junction temperature.

For engineers reviewing the IKWH40N65WR6 datasheet, IKWH40N65WR6 pinout, IKWH40N65WR6 application, or IKWH40N65WR6 equivalent, this device supports high-reliability ZCS topologies, parallel switching via positive VCE(sat) temperature coefficient, and stable thermal behavior across wide temperature ranges - critical for industrial power conversion design validation.

Technical Context

This IGBT-diode co-packaged device implements TRENCHSTOP™ 5 WR6 technology with monolithic integration of a soft-recovery, low-Qrr diode optimized for PFC and welding applications. Its gate threshold voltage (3.2–4.8 V) and transconductance (89 S) support robust drive margin under high dv/dt noise conditions.

The device features low parasitic inductance (LE = 13 nH), high short-circuit withstand time, and JEDEC-qualified reliability for industrial environments. Thermal resistance Rth(j-c) is 0.9 K/W for the IGBT and 4.2 K/W for the diode, enabling efficient heatsink coupling in high-power modules.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 650 V - Maximum blocking voltage compatible with 400 V AC input PFC stages and 600 V DC bus systems.
IC 40 A continuous - Rated collector current at Tc = 100 °C, supporting compact heatsink designs in 3–5 kW converters.
VCE(sat) 1.55–1.85 V @ 40 A/15 V - Low conduction loss enables >98% efficiency in hard-switched PFC and welder output stages.
Eoff 0.57–0.89 mJ @ 400 V/40 A - Very low turn-off energy reduces switching losses and thermal stress during high-frequency operation.
Creepage/ Clearance >4.8 mm / >3.4 mm - Enhanced isolation meets reinforced insulation requirements for industrial safety standards (IEC 61800, UL 61800).
Tvj(max) 175 °C - Extended junction temperature rating allows derated operation in high-ambient environments without forced cooling.
QG 117 nC - Gate charge value informs gate driver selection (e.g., 2–3 A peak drive capability required for <35 ns td(on)).

Pinout & Package

Package: PG-TO247-3-STD - Standard 3-pin through-hole package with isolated mounting hole, optimized for mechanical stability and thermal transfer in high-vibration industrial enclosures.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main power output terminal of IGBT Connected to DC bus or transformer primary; carries full load current and must be routed with low-inductance layout.
Gate (G) Control input for IGBT switching Requires low-impedance gate driver path; sensitive to noise due to 3.2–4.8 V VGE(th) and 117 nC QG.
Emitter (E) Common emitter node for IGBT and diode Shared return path for both devices; internal emitter inductance (13 nH) impacts switching waveform fidelity.

Key Features

Feature Design Value
Positive VCE(sat) tempco Enables stable current sharing in parallel IGBT configurations without external current-balancing resistors.
Monolithic diode with low Qrr 1.4–2.5 µC reverse recovery charge minimizes diode-induced voltage spikes and EMI in PFC boost stages.
Enhanced creepage & clearance Pin-to-pin distances exceed 4.8 mm creepage and 3.4 mm clearance - eliminates need for conformal coating in Class II insulation designs.
Low Esw temperature dependence Turn-on/off energy variation <25% from 25 °C to 175 °C - ensures predictable thermal management across full operating range.
JEDEC-qualified reliability Validated per JEDEC47/20/22 for industrial use - supports 10+ year field life in unattended welding equipment and UPS systems.

Applications

Industrial PFC Rectifiers IGBT-Based Welding Inverters

Use Scenario: Three-phase active front-end rectifier in 5 kW servo drives requiring >97% efficiency and THD <5%.

IC Role / Device Role / Timing Role: High-side IGBT switch in interleaved boost topology, operating at 20–50 kHz with zero-current switching assistance.

Use Value: Low VCE(sat) and Eoff reduce conduction + switching losses by 18% vs. legacy TRENCHSTOP 4, enabling smaller heatsinks and fanless operation.

Use Scenario: Output inverter stage in 3-phase MIG/MAG welding machines delivering 200–400 A arc current.

IC Role / Device Role / Timing Role: Main switching device in full-bridge inverter driving resonant LC tank; handles repetitive 120 A pulsed currents.

Use Value: Stable VCE(sat) over temperature prevents current runaway during sustained arc duty cycles, improving weld consistency and electrode life.

ZCS Resonant Converters Uninterruptible Power Supplies

Use Scenario: Zero-current switching half-bridge in telecom rectifier modules operating at 100 kHz with 48 V/200 A output.

IC Role / Device Role / Timing Role: Resonant switch with soft-commutation; leverages low trr diode for natural turn-off zero-current detection.

Use Value: Diode trr of 79–104 ns and low dirr/dt (383–821 A/µs) suppresses voltage overshoot during resonant transitions, reducing snubber losses by 30%.

Use Scenario: Online double-conversion UPS with 10 kVA capacity and battery backup for data center servers.

IC Role / Device Role / Timing Role: Inverter-stage IGBT in H-bridge output stage; switches 60 Hz fundamental with PWM carrier up to 16 kHz.

Use Value: 175 °C Tvj(max) and 0.9 K/W Rth(j-c) allow reliable operation under 40 °C ambient with 15-minute overload capability, meeting UL 1778 hold-time requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT-diode co-packaged applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKW40N65ES6 Same 650 V/40 A rating but uses TRENCHSTOP™ 5 ES6 technology; higher VCE(sat) (1.75 V typ) and no enhanced creepage package. Lacks >4.8 mm creepage; unsuitable for reinforced insulation systems requiring extended air gaps. Select when cost sensitivity outweighs safety certification needs and board-level creepage can be managed externally.
FGH40N60UF 600 V rating, lower VCE(sat) (1.45 V), but only 150 °C Tvj(max) and no monolithic diode - requires external diode. Not suitable for space-constrained PFC where integrated diode saves PCB area and reduces parasitics. Prefer for 400 V AC input systems where 600 V blocking suffices and discrete diode placement is acceptable.

Compared with IKW40N65ES6 and FGH40N60UF, IKWH40N65WR6 uniquely combines reinforced insulation compliance, monolithic diode integration, and 175 °C operation - making it the only choice for certified industrial PFC and welding inverters demanding long-term reliability without external creepage enhancement.

Availability

IKWH40N65WR6 is available at Aetrix Electronics and suitable for industrial PFC rectifiers, IGBT-based welding inverters, and ZCS resonant converters requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKWH40N65WR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ 5 WR6 product line, engineered specifically for high-reliability industrial power conversion where reinforced insulation, parallel scalability, and thermal robustness are mandatory design requirements.

FAQ

What is the maximum recommended gate resistor for reliable switching?

The datasheet specifies RG(on)/RG(off) = 27 Ω for characterization. For 40 A operation at 175 °C, a 15–22 Ω gate resistor is recommended to balance switching speed (td(on) ≈ 34 ns) and voltage overshoot control. Lower values increase dv/dt stress; higher values raise Eon/Eoff and thermal load.

Can IKWH40N65WR6 be used in parallel without current-sharing resistors?

Yes - its positive temperature coefficient of VCE(sat) ensures inherent current balancing. At 175 °C, VCE(sat) rises to 1.8 V (vs. 1.55 V at 25 °C), causing hotter devices to conduct less. Parallel operation requires matched gate drive paths and symmetrical layout to avoid dynamic imbalance.

Does the integrated diode support soft recovery in PFC applications?

Yes - the monolithic diode exhibits soft reverse recovery with trr = 79 ns (25 °C) and low Irrm (24.7 A), minimizing voltage spikes and EMI. Its Qrr increases only moderately to 2.5 µC at 175 °C, preserving PFC efficiency across full thermal range without snubber redesign.

Is the PG-TO247-3-STD package RoHS and REACH compliant?

Yes - Infineon confirms full RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006 compliance for IKWH40N65WR6. The package uses lead-free matte tin plating and halogen-free molding compound, with full material declarations available via Infineon's Eco Reports portal.

IKWH40N65WR6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™ 5 WR6
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
75 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
1.85V @ 15V, 40A
Power - Max:
175 W
Switching Energy:
1.09mJ (on), 570µJ (off)
Input Type:
Standard
Gate Charge:
117 nC
Td (on/off) @ 25°C:
37ns/353ns
Test Condition:
400V, 40A, 27Ohm, 15V
Reverse Recovery Time (trr):
79 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-32

IKWH40N65WR6XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKWH40N65WR6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKWH40N65WR6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH40N65WR6XKSA1 is usually 5 days.

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IKWH40N65WR6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IKWH40N65WR6XKSA1?

For technical support, including IKWH40N65WR6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH40N65WR6XKSA1 requirements.

6.How does Aetrix verify that IKWH40N65WR6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH40N65WR6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH40N65WR6XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH40N65WR6XKSA1?

All IKWH40N65WR6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH40N65WR6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH40N65WR6XKSA1 part is unused and in its original packaging.

Return procedure for IKWH40N65WR6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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