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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKWH50N65EH7XKSA1

Name: IKWH50N65EH7XKSA1
Brand: Infineon Technologies
SKU: IKWH50N65EH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKWH50N65EH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKWH50N65EH7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO247-3

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Product details

Overview

IKWH50N65EH7XKSA1 from Infineon is a 650 V, 50 A TRENCHSTOP™ IGBT7 co-packed with an emitter-controlled 7 diode in a PG-TO247-3-STD package. It delivers low V_CE(sat) (1.65 V typ. at 25 °C), fast switching (t_d(off) = 147 ns), and soft reverse recovery (t_rr = 76 ns), enabling high-efficiency hard-switching in industrial UPS and EV-charging inverters.

For engineers reviewing the IKWH50N65EH7XKSA1 datasheet, IKWH50N65EH7XKSA1 pinout, IKWH50N65EH7XKSA1 application, or IKWH50N65EH7XKSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.46 K/W), gate charge (102 nC), diode Q_rr (1.12 µC), and humidity robustness for long-term reliability in harsh environments.

Technical Context

This IGBT7 device uses field-stop trench gate technology to achieve simultaneous reduction in conduction and switching losses. Its integrated Emitter Controlled 7 diode features low reverse recovery charge and negative dI_rr/dt (−1480 A/µs), minimizing voltage overshoot and EMI during turn-off.

The device is optimized for two-level and three-level topologies operating up to 175 °C junction temperature. Its 13 nH internal emitter inductance and 0.6 K/W IGBT R_th(j-c) support stable paralleling and thermal management in high-power converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Maximum blocking voltage for 400–520 V DC-link applications like string inverters and industrial UPS.
I_C	50 A continuous - Rated output current at T_c = 100 °C, supporting 5–10 kW power stages without forced air cooling.
V_CE(sat)	1.65 V (typ., 25 °C) - Low conduction loss enables >98% efficiency in 16 kHz hard-switched PFC and inverter stages.
E_off	0.65 mJ (25 °C) - Reduced turn-off energy lowers heatsink requirements and improves system power density.
t_rr	76 ns (25 °C) - Fast, soft diode recovery minimizes voltage spikes and snubber losses in bidirectional switching.
R_th(j-c)	0.46 K/W - Enables direct mounting to heatsinks with predictable thermal performance in compact enclosures.
Q_G	102 nC - Gate drive requirement compatible with standard 2–4 A peak gate drivers (e.g., 1ED020I12FA).

Pinout & Package

Package: PG-TO247-3-STD (standard 3-pin TO-247 variant with isolated tab, JEDEC TO-247AC footprint, 4.8 mm creepage).

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC-link positive; handles full load current and short-circuit stress up to 200 A pulse.
Gate (G)	Control input for IGBT channel	Low-impedance MOS-driven terminal requiring <10 Ω external gate resistor for controlled dv/dt and EMI suppression.
Emiter (E)	Common emitter node for IGBT and diode	Reference point for gate drive and current sensing; shared cathode-anode return for co-pack diode conduction.

Key Features

Feature	Design Value
Low V_CE(sat) + soft diode	1.65 V / 2.0 V (V_F) at 50 A - Reduces total conduction loss by ~18% vs. IGBT5 counterparts in 10 kHz–20 kHz inverters.
TRENCHSTOP™ IGBT7 architecture	Optimized carrier lifetime and trench depth - Achieves 30% lower E_ts than IGBT4 while maintaining rugged short-circuit capability (10 µs @ 175 °C).
Humidity robustness	Qualified per JEDEC JESD22-A110 - Ensures stable parameter drift and no corrosion failure after 1000 h at 85 °C/85% RH.
Integrated diode with low Q_rr	1.12 µC (25 °C) - Enables zero-voltage switching (ZVS) assist in LLC resonant converters and reduces snubber sizing by 40%.

Applications

Industrial UPS

EV-Charging Station

Use Scenario: Three-phase 10–30 kVA online double-conversion UPS with IGBT-based inverter stage.

IC Role / Device Role / Timing Role: Main inverter switch handling 50 A RMS output current at 16 kHz PWM frequency.

Use Value: Low V_CE(sat) and soft diode reduce thermal stress on heatsink, enabling fanless operation up to 40 °C ambient.

Use Scenario: 11–22 kW AC Level 2 EV charger with active front-end rectifier and DC-DC isolation stage.

IC Role / Device Role / Timing Role: Bidirectional switch in interleaved boost PFC and isolated DC-DC converter half-bridge.

Use Value: Low Q_G and fast t_d(on)/t_d(off) allow precise phase-shift control and <1% THD under dynamic load.

String Inverter

IGBT-Based Welding Power Supply

Use Scenario: 5–10 kW photovoltaic string inverter with transformerless topology and 20 kHz switching.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage with unipolar PWM modulation.

Use Value: 13 nH internal emitter inductance suppresses parasitic oscillation, eliminating need for external RC snubbers.

Use Scenario: 150–300 A constant-current arc welding supply using hard-switched inverter topology.

IC Role / Device Role / Timing Role: Primary-side switch in full-bridge inverter driving high-frequency transformer at 12–25 kHz.

Use Value: 175 °C max T_vj and 200 A pulsed rating sustain 300% overload for 10 s without derating or thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed, low-V_CE(sat) IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N65ES7	Same IGBT7 die but no integrated diode; requires external antiparallel diode.	Higher design flexibility for custom diode selection, but increases PCB area and layout complexity.	Choose when optimizing for cost-sensitive designs where discrete diode selection improves system-level efficiency.
FGH50T65SQD	650 V, 50 A IGBT with SiC Schottky diode; higher V_CE(sat) (1.85 V), lower E_off (0.42 mJ).	Better suited for >50 kHz ZVS topologies; not rated for 175 °C continuous operation.	Prefer for ultra-high-frequency resonant converters where diode reverse recovery is eliminated entirely.

Compared with IKW50N65ES7 and FGH50T65SQD, IKWH50N65EH7XKSA1 uniquely combines integrated soft-recovery diode, 175 °C rating, and industry-leading V_CE(sat)/E_off trade-off-making it optimal for thermally constrained, hard-switched industrial inverters requiring minimal BOM count.

Availability

IKWH50N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging stations, and string inverters requiring stable component supply across multi-year production cycles.

Supply support for IKWH50N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-reliability hard-switching inverters in industrial motor drives, UPS, and solar power conversion systems.

FAQ

What is the maximum recommended gate-emitter voltage for reliable operation?

The absolute maximum V_GE is ±20 V DC, with transient rating of ±30 V for pulses ≤10 µs. For long-term reliability, Infineon recommends limiting V_GE to +15 V during turn-on and −8 V during turn-off. Exceeding +15 V increases leakage current and accelerates gate oxide degradation, especially above 175 °C junction temperature.

Does this device support parallel operation, and what layout considerations apply?

Yes-its low V_CE(sat) temperature coefficient (+1.2 mV/°C) and matched dynamic parameters enable stable current sharing. Critical layout practices include symmetrical gate drive paths with matched trace length and impedance, Kelvin emitter connections to avoid common-source inductance, and uniform heatsink pressure across all devices to maintain thermal balance.

How does the integrated diode differ from standard FRD or SiC Schottky diodes?

This emitter-controlled 7 diode offers soft reverse recovery (low dI_rr/dt) and low Q_rr, unlike fast recovery diodes that generate high EMI, and unlike SiC Schottky diodes that lack reverse blocking capability. It provides 650 V reverse voltage rating and operates reliably up to 175 °C-matching the IGBT's thermal envelope without derating.

Is humidity robustness verified per industry standards, and what test conditions were used?

Yes-qualified per JEDEC JESD22-A110 (Highly Accelerated Temperature and Humidity Stress Test). Devices underwent 1000 hours at 85 °C/85% RH with electrical monitoring; no parameter shift exceeded 10% of initial values, and no corrosion or delamination was observed on bond wires or mold compound interfaces.

IKWH50N65EH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 50A

Power - Max:: 249 W

Switching Energy:: 1.27mJ (on), 650µJ (off)

Input Type:: Standard

Gate Charge:: 102 nC

Td (on/off) @ 25°C:: 19ns/147ns

Test Condition:: 400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr):: 76 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-32

IKWH50N65EH7XKSA1 FAQ

1.How can I place an order for IKWH50N65EH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKWH50N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH50N65EH7XKSA1 reliable?

The price and inventory of IKWH50N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH50N65EH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH50N65EH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH50N65EH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKWH50N65EH7XKSA1?

IKWH50N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH50N65EH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH50N65EH7XKSA1?

For technical support, including IKWH50N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH50N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKWH50N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH50N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH50N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH50N65EH7XKSA1?

All IKWH50N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH50N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH50N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKWH50N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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