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Infineon Technologies IKWH50N65WR6XKSA1

Part No.:
IKWH50N65WR6XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKWH50N65WR6XKSA1.pdf
Description:
IGBT TRENCH FS 650V 85A TO247-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:198

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Product details

Overview

IKWH50N65WR6 from Infineon is a 650 V, 50 A TRENCHSTOP™ 5 IGBT with integrated fast-recovery diode in PG-TO247-3-STD package, designed for high-reliability industrial PFC and welding inverters. It features 1.85 V typical VCE(sat) at 50 A/15 V, 0.73 mJ Eoff at 25 °C, and enhanced creepage (>4.8 mm) and clearance (>3.4 mm) for contamination-prone environments.

For engineers reviewing the IKWH50N65WR6 datasheet, IKWH50N65WR6 pinout, IKWH50N65WR6 application, or IKWH50N65WR6 equivalent, key selection criteria include VCE(sat) temperature stability, low Esw at 175 °C, monolithic diode softness (trr = 87 ns), and TO-247 creepage compliance for industrial safety standards.

Technical Context

This IGBT employs TRENCHSTOP™ 5 WR6 silicon with optimized field-stop structure and positive VCE(sat) temperature coefficient-enabling stable parallel operation without current-sharing resistors. Its monolithic diode exhibits low Qrr (1.7 µC) and soft recovery (Irrm = 28.4 A), critical for reducing voltage overshoot in ZCS PFC stages.

The device targets hard-switched and resonant topologies operating up to 175 °C junction temperature, with Rth(j-c) = 0.8 K/W for the IGBT and 3.2 K/W for the diode-supporting thermal design in compact, convection-cooled welder power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VCE650 V - supports 400 V AC input PFC and 600 V DC bus welding inverters with margin.
IC50 A continuous - rated for 100 °C case temperature, enabling 5 kW–7 kW industrial output without forced air.
VCE(sat)1.85 V typ @ 50 A/15 V/25 °C - low conduction loss reduces heatsink size by ~25% vs. older 2.2 V devices.
Eoff0.73 mJ @ 400 V/50 A/25 °C - enables 20–40 kHz switching in PFC while limiting total losses below 120 W.
trr87 ns @ 25 °C - soft reverse recovery minimizes diode-induced voltage spikes during IGBT turn-on.
Rth(j-c)0.8 K/W (IGBT) - allows direct mounting to aluminum baseplate with ≤1.2 K/W total thermal resistance to ambient.
Creepage>4.8 mm - meets IEC 60664-1 Pollution Degree 3 requirements for uncoated PCBs in dusty factory environments.

Pinout & Package

PG-TO247-3-STD package with 3-pin through-hole configuration: Collector (C), Gate (G), Emitter (E). Enhanced creepage/clearance layout isolates collector pin from gate/emitter pins per JEDEC TO-247 mechanical standard.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (left)Collector (C)Main high-side power terminal; electrically isolated by >4.8 mm creepage from gate/emitter for reinforced insulation.
Pin 2 (center)Gate (G)Control input requiring ±20 V rating; low Cies (3510 pF) enables fast, low-loss gate driving with 22 Ω resistor.
Pin 3 (right)Emitter (E)Power return and reference node for gate drive; shared emitter path with integrated diode cathode.

Key Features

FeatureDesign Value
Positive VCE(sat) tempcoEnables stable current sharing in paralleled IGBTs without external ballast resistors or active current balancing.
Monolithic diode with soft recoveryQrr = 1.7 µC and trr = 87 ns reduce EMI and snubber stress in high-dV/dt PFC boost stages.
Enhanced creepage & clearancePin-to-pin distances exceed 4.8 mm (creepage) and 3.4 mm (clearance), supporting pollution degree 3 certification.
Low Esw at high temperatureEoff increases only 47% from 25 °C to 175 °C (0.73 → 1.07 mJ), preserving efficiency in thermally constrained welders.

Applications

PFC Boost ConverterIndustrial Arc Welder Inverter

Use Scenario: 3.3 kW–5 kW single-phase or three-phase active PFC front-end for UPS and motor drives.

IC Role / Device Role / Timing Role: Main switching device in boost topology; operates at 20–40 kHz with zero-current switching assistance.

Use Value: Low VCE(sat) and soft diode reduce conduction + switching losses to <1.8% total PFC loss at full load.

Use Scenario: Primary inverter stage in 5–10 kVA stick/tig welders with variable duty cycle and high peak current demands.

IC Role / Device Role / Timing Role: Half-bridge switch handling 150 A pulsed output; driven with 15 V gate voltage and 22 Ω gate resistors.

Use Value: Stable VCE(sat) across -40 °C to 175 °C ensures consistent arc initiation and droop control under thermal cycling.

ZCS Resonant ConverterInduction Heating Inverter

Use Scenario: Zero-current-switched resonant DC-DC stage for battery charging systems requiring low EMI and high reliability.

IC Role / Device Role / Timing Role: High-side switch synchronized to resonant tank zero-current crossing; gate driven with precise dead-time control.

Use Value: Fast fall time (24 ns) and low Eoff enable efficient 100 kHz operation with <0.5% switching loss increase over 25–125 °C range.

Use Scenario: 3–6 kW medium-frequency (20–50 kHz) induction heating inverter for metal hardening and brazing equipment.

IC Role / Device Role / Timing Role: Full-bridge IGBT switch managing 400 V DC bus and 100 A peak load currents with high di/dt capability.

Use Value: Integrated diode's low Qrr and soft recovery suppress voltage spikes during commutation, eliminating need for external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT+diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N65ES5VCE(sat) = 1.75 V @ 40 A; lower current rating; no enhanced creepage package.Suitable for lower-power PFC (<3 kW); requires conformal coating for pollution degree 3 compliance.Select when cost sensitivity outweighs creepage requirement and power level is ≤40 A RMS.
FGH40N60UFD600 V rating; higher VCE(sat) (1.9 V); TO-247-3 package with standard creepage (~3.2 mm).Limited to 400 V AC input systems; not qualified for 650 V bus or harsh industrial environments.Choose only for legacy 600 V designs where Infineon's WR6 reliability enhancements are not required.

Compared with IKW40N65ES5 and FGH40N60UFD, IKWH50N65WR6 delivers higher current capability, guaranteed creepage compliance, and superior thermal stability-making it the preferred choice for new 5–7 kW industrial PFC and welding platforms requiring long-term field reliability.

Availability

IKWH50N65WR6 is available at Aetrix Electronics and suitable for industrial PFC modules, arc welder inverters, ZCS resonant converters, and induction heating systems requiring stable component supply under extended thermal and contamination stress.

Supply support for IKWH50N65WR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in IGBT, SiC, and GaN power devices for industrial and energy applications.

This part belongs to the TRENCHSTOP™ 5 WR6 product line, engineered specifically for high-reliability industrial switching applications where creepage, thermal robustness, and diode softness are critical-such as welding, PFC, and resonant converters operating in uncontrolled environments.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 22 Ω for characterization. For 50 A operation at 40 kHz, a 15–22 Ω non-inductive gate resistor is recommended to balance switching speed (td(on) = 40 ns) and voltage overshoot. Lower values risk shoot-through; higher values increase Eon disproportionately due to slow Miller plateau transition.

Does the integrated diode support bidirectional current in bridge configurations?

Yes-the monolithic diode is an ultrafast, soft-recovery freewheeling diode rated for 24 A continuous and 50 A pulsed forward current. It conducts naturally during the IGBT's off-state in half-bridge or full-bridge topologies, with trr = 87 ns and low Qrr ensuring minimal reverse recovery loss and voltage spike generation.

Can IKWH50N65WR6 be used in 800 V DC bus applications?

No-it is rated for 650 V VCE maximum. Operating above 650 V violates absolute maximum ratings and risks catastrophic failure. For 800 V systems, consider Infineon's 1200 V TRENCHSTOP™ IGBTs (e.g., IKW20N120CS6) or SiC MOSFET alternatives with appropriate derating.

Is the PG-TO247-3-STD package RoHS and REACH compliant?

Yes-Infineon certifies IKWH50N65WR6 as fully RoHS 2011/65/EU and REACH SVHC-compliant. The lead-free finish uses matte tin plating on copper leads, and the epoxy mold compound meets UL 94 V-0 flammability rating with halogen-free formulation per IEC 61249-2-21.

IKWH50N65WR6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™ 5 WR6
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
85 A
Current - Collector Pulsed (Icm):
150 A
Vce(on) (Max) @ Vge, Ic:
1.85V @ 15V, 50A
Power - Max:
205 W
Switching Energy:
1.5mJ (on), 730µJ (off)
Input Type:
Standard
Gate Charge:
144 nC
Td (on/off) @ 25°C:
40ns/351ns
Test Condition:
400V, 50A, 22Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-32

IKWH50N65WR6XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKWH50N65WR6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKWH50N65WR6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH50N65WR6XKSA1 is usually 5 days.

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IKWH50N65WR6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IKWH50N65WR6XKSA1?

For technical support, including IKWH50N65WR6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH50N65WR6XKSA1 requirements.

6.How does Aetrix verify that IKWH50N65WR6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH50N65WR6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH50N65WR6XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH50N65WR6XKSA1?

All IKWH50N65WR6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH50N65WR6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH50N65WR6XKSA1 part is unused and in its original packaging.

Return procedure for IKWH50N65WR6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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