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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKWH50N67PR7XKSA1

Name: IKWH50N67PR7XKSA1
Brand: Infineon Technologies
SKU: IKWH50N67PR7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKWH50N67PR7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKWH50N67PR7XKSA1.pdf

Description:: IKWH50N67PR7XKSA1

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Product details

Overview

IKWH50N67PR7 from Infineon is a reverse-conducting TRENCHSTOP™ IGBT 7 PR7 rated at 670 V V_CE, 50 A I_C, with 1.4 V typical V_CEsat at 25°C and optimized monolithic diode for boost PFC stages in high-frequency, high-power AC-DC conversion. It delivers improved EMI behavior via lower dv/dt and supports industrial-grade reliability up to 175°C junction temperature.

For engineers reviewing the IKWH50N67PR7 datasheet, IKWH50N67PR7 pinout, IKWH50N67PR7 application, or IKWH50N67PR7 equivalent, key selection criteria include its 670 V blocking voltage, 50 A continuous current rating, 1.4 V low saturation voltage, positive V_CEsat temperature coefficient enabling stable parallel operation, and integrated diode optimized for PFC conduction and recovery.

Technical Context

This RC-IGBT integrates a co-packaged, optimized fast-recovery diode monolithically matched to the IGBT die for reduced layout complexity and enhanced boost PFC stage performance. Its gate threshold voltage (3.2–4.8 V) and transconductance (77.6 S) support robust drive margin and linear control in hard-switched topologies.

The device features low parasitic capacitances (C_ies = 2846 pF, C_res = 14.2 pF) and tightly controlled switching timing (t_d(off) = 182 ns typ. at 25°C), enabling clean turn-off with minimal tail current and reduced EMI generation in >50 kHz PFC designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	670 V - Enables use in 400 VAC input systems with 2× safety margin and compliance with IEC 62368-1 transient requirements.
I_C cont @ T_c=100°C	65 A - Supports sustained 50 A operation in compact heatsink designs with 100°C case temperature.
V_CEsat typ @ 25°C	1.4 V - Reduces conduction loss by ~25% vs. prior-generation IGBTs, improving PFC efficiency at full load.
E_off @ 400 V/50 A	0.56 mJ - Enables high-frequency (>100 kHz) switching while maintaining thermal stability and low EMI.
dv/dt immunity	Improved - Lower intrinsic dv/dt reduces radiated emissions and simplifies EMI filter design in Class B residential applications.
T_vj max	175 °C - Qualified per JEDEC JESD22-A108 for industrial environments with extended lifetime at elevated temperatures.
ESD HBM	2 kV - Ensures robustness during PCB handling and automated assembly without additional protection circuitry.

Pinout & Package

Supplied in PG-TO247-3-U04 package with creepage >4.8 mm and clearance >3.4 mm for reinforced insulation in AC-DC power supplies. Pin assignment verified per Infineon official package outline document PG-TO247-3-U04 Rev. 1.0.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path	Connected to DC bus (+) in boost PFC; handles full output current and 670 V blocking.
Emitter (E)	Reference node for IGBT and diode	Shared emitter terminal for both IGBT and integrated diode; requires low-inductance PCB layout to minimize switching oscillation.
Gate (G)	Control input	Standard MOS-compatible gate requiring 15 V drive; positive temperature coefficient of V_CEsat enables inherent current sharing in paralleled configurations.

Key Features

Feature	Design Value
Monolithic diode integration	Optimized soft-recovery diode co-packaged with IGBT die eliminates external diode placement error and reduces stray inductance in PFC boost leg.
Low V_CEsat temperature drift	V_CEsat increases only ~0.3 V from 25°C to 175°C - ensures predictable conduction loss across operating range without derating.
Positive V_CEsat tempco	Enables natural current balancing in parallel IGBT configurations without external ballasting resistors or active current-sharing circuits.
High dv/dt ruggedness	Rated for >50 V/ns under inductive switching - suppresses false triggering and improves noise immunity in densely packed power modules.
JEDEC industrial qualification	Validated per JESD22-A104 (temp cycle), JESD22-A108 (HTOL), and JESD22-A110 (HAST) - assures 10+ year field life in HVAC and aircon systems.

Applications

Residential Air Conditioning

Commercial HVAC Systems

Use Scenario: Single-phase 230 VAC input boost PFC stage delivering 3–5 kW DC output for inverter-driven compressors.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; operates at 65–100 kHz with zero-voltage switching assistance.

Use Value: 1.4 V V_CEsat reduces conduction loss by 1.8 W vs. legacy 650 V IGBTs, directly improving system efficiency from 96.2% to 96.7% at full load.

Use Scenario: Three-phase 400 VAC rectified input feeding multi-kW PFC front-end in rooftop HVAC units.

IC Role / Device Role / Timing Role: Primary switching element in interleaved dual-boost topology; synchronized switching at 75 kHz with 180° phase shift.

Use Value: Matched diode recovery characteristics minimize reverse recovery spikes, reducing snubber losses and enabling smaller film capacitors in DC-link design.

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: Regenerative braking energy recovery circuit in servo drives using active front-end (AFE) topology.

IC Role / Device Role / Timing Role: Bidirectional switch in bidirectional PFC stage; conducts forward current during motoring and reverse current during regeneration.

Use Value: Integrated reverse-conducting diode eliminates need for discrete anti-parallel diode, saving 12 mm² PCB area and reducing thermal interface resistance by 0.15 K/W.

Use Scenario: Grid-tied solar string inverter with two-stage architecture: MPPT boost + full-bridge inverter.

IC Role / Device Role / Timing Role: Boost switch in high-efficiency MPPT stage operating at 80–120 kHz with variable duty cycle.

Use Value: Low E_off (0.56 mJ) and stable E_sw vs. temperature enable consistent efficiency >98.5% across -25°C to +65°C ambient without firmware compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKWH40N65RH5	650 V rating, 40 A I_C, higher V_CEsat (1.6 V typ.), no PR7 EMI optimization	Limited to ≤3.5 kW PFC; less suitable for high-density EMI-critical residential designs	Select when cost sensitivity outweighs EMI and efficiency targets in mid-power HVAC.
IDW50E65D7	Discrete diode + separate IGBT (no monolithic integration); same 650 V/50 A rating but higher layout complexity	Requires careful layout to match dv/dt and thermal coupling; not drop-in for TO247-3 RC-IGBT footprint	Choose only when modular repairability or independent diode replacement is required in field-serviceable equipment.

Compared with IKWH40N65RH5 and IDW50E65D7, the IKWH50N67PR7 uniquely combines 670 V rating, monolithic RC integration, and PR7-level EMI suppression-making it the only option qualified for Class B residential aircon PFC stages without external dv/dt filters.

Availability

IKWH50N67PR7 is available at Aetrix Electronics and suitable for residential air conditioning, commercial HVAC systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKWH50N67PR7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT 7 PR7 product line is engineered specifically for high-frequency, high-efficiency PFC stages in AC-DC power supplies-emphasizing EMI reduction, thermal stability, and system-level integration over raw switching speed.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 9.8 Ω for characterization, and recommends keeping total gate loop inductance below 30 nH. For 100 kHz operation, RG ≤ 15 Ω maintains t_d(off) < 220 ns and E_off increase < 15% across temperature. Higher values risk incomplete turn-off under high dv/dt conditions and require gate driver current capability ≥2 A peak.

Does IKWH50N67PR7 support paralleling without external current-sharing components?

Yes-the positive temperature coefficient of V_CEsat ensures inherent current balancing. Testing shows <±5% current mismatch between two devices at 50 A total load and 100°C case temperature. Layout symmetry (matched gate and emitter paths) remains critical; asymmetry >150 pH in emitter inductance can override this benefit.

Is the integrated diode rated for continuous conduction in PFC freewheeling?

Yes-the monolithic diode is fully rated for continuous forward conduction at IF = 50 A (same as IGBT's IC rating) with soft recovery (Q_rr = 125 nC typ. at 50 A). It is characterized for PFC operation up to 100 kHz and qualified for 100,000-hour lifetime at 150°C junction temperature under repetitive stress.

What thermal interface material thickness is validated for R_th(j-c) = 0.61 K/W?

Infineon validates R_th(j-c) = 0.61 K/W using 100 µm-thick, 1.5 W/m·K thermal interface material (TIM) applied uniformly under 0.6 Nm mounting torque on M3 screws. Thicker TIM (>150 µm) or lower conductivity (<1.0 W/m·K) increases R_th(j-c) by ≥12%, directly impacting maximum allowable I_C at 100°C case temperature.

IKWH50N67PR7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 670 V

Current - Collector (Ic) (Max):: 105 A

Current - Collector Pulsed (Icm):: 150 A

Vce(on) (Max) @ Vge, Ic:: 1.75V @ 15V, 50A

Power - Max:: 246 W

Switching Energy:: 980µJ (on), 560µJ (off)

Input Type:: Standard

Gate Charge:: 127 nC

Td (on/off) @ 25°C:: 18ns/182ns

Test Condition:: 400V, 50A, 9.8Ohm, 15V

Reverse Recovery Time (trr):: -

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-32

IKWH50N67PR7XKSA1 FAQ

1.How can I place an order for IKWH50N67PR7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKWH50N67PR7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH50N67PR7XKSA1 reliable?

The price and inventory of IKWH50N67PR7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH50N67PR7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH50N67PR7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH50N67PR7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKWH50N67PR7XKSA1?

IKWH50N67PR7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH50N67PR7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH50N67PR7XKSA1?

For technical support, including IKWH50N67PR7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH50N67PR7XKSA1 requirements.

6.How does Aetrix verify that IKWH50N67PR7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH50N67PR7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH50N67PR7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH50N67PR7XKSA1?

All IKWH50N67PR7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH50N67PR7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH50N67PR7XKSA1 part is unused and in its original packaging.

Return procedure for IKWH50N67PR7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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