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Infineon Technologies IKWH60N65WR6XKSA1

Part No.:
IKWH60N65WR6XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKWH60N65WR6XKSA1.pdf
Description:
IGBT TRENCH FS 650V 100A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:106

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Product details

Overview

IKWH60N65WR6 from Infineon is a 650 V, 60 A TRENCHSTOP™ 5 IGBT with integrated fast-recovery diode in PG-TO247-3-STD package, designed for high-efficiency PFC and welding inverters. It features 1.85 V typical VCE(sat) at 60 A/15 V, 0.85 mJ Eoff at 25 °C, and enhanced creepage (>4.8 mm) and clearance (>3.4 mm) for industrial isolation compliance.

For engineers reviewing the IKWH60N65WR6 datasheet, IKWH60N65WR6 pinout, IKWH60N65WR6 application, or IKWH60N65WR6 equivalent, this device supports high-current ZCS switching, parallel operation via positive VCE(sat) temperature coefficient, and stable thermal behavior up to 175 °C junction temperature.

Technical Context

This IGBT employs TRENCHSTOP™ 5 WR6 silicon technology with monolithic co-packaged diode optimized for low-loss PFC stages and high-duty-cycle welding output stages. Its gate charge (174 nC) and low Cres (19 pF) enable fast, controllable switching with reduced Miller effect.

The device integrates thermally decoupled IGBT and diode dies in a single TO-247-3 package, delivering 0.6 K/W IGBT Rth(j-c) and 2.3 K/W diode Rth(j-c), supporting high-power density designs where thermal management and layout simplicity are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VCE650 V - Supports 400 V AC input PFC and 600 V DC bus systems with margin for voltage transients.
IC60 A continuous - Rated for sustained conduction in 5–15 kW industrial power converters.
VCE(sat)1.85 V typ. @ 60 A/15 V/25 °C - Enables <110 W conduction loss at full load, reducing heatsink requirements.
Eoff0.85 mJ @ 400 V/60 A/25 °C - Low turn-off energy minimizes switching loss in hard-switched PFC and inverter legs.
Creepage/ Clearance>4.8 mm / >3.4 mm - Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 for industrial mains-connected equipment.
Tvj(max)175 °C - Allows operation in high-ambient environments (e.g., enclosed welders) without derating below 100 °C case temperature.
QG174 nC - Compatible with standard 2–4 A gate drivers; enables precise timing control in ZCS topologies.

Pinout & Package

Package: PG-TO247-3-STD (standard 3-pin TO-247), lead-free, RoHS-compliant, with enhanced creepage/clearance design. Pin-to-pin spacing meets industrial safety standards for 650 V applications.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current pathConnected to DC bus (+) in half-bridge; requires low-inductance layout due to 13 nH internal emitter inductance.
Gate (G)Control terminal for IGBT channelAccepts ±20 V max drive; 174 nC total gate charge demands robust gate resistor selection (e.g., 15 Ω recommended).
Emitter (E)Reference node for IGBT and diodeShared emitter for IGBT/diode; must be low-impedance return path to minimize shoot-through risk and voltage spikes.

Key Features

FeatureDesign Value
Positive VCE(sat) tempcoEnables stable current sharing in paralleled IGBT configurations without external current-balancing resistors.
Monolithic diode with low Qrr2.3 µC Qrr @ 25 °C reduces reverse recovery loss and EMI in PFC boost diodes and freewheeling paths.
Low Esw temperature dependenceTurn-off energy increases only ~38% from 25 °C to 175 °C, enabling predictable loss budgeting across operating range.
Enhanced package isolation4.8 mm creepage distance eliminates need for conformal coating or slotting in PCB for 650 V working voltage designs.

Applications

PFC Boost ConverterIGBT Welding Inverter

Use Scenario: Active front-end rectifier in 10–15 kW industrial UPS or motor drives.

IC Role / Device Role / Timing Role: High-frequency (20–100 kHz) switching IGBT in continuous conduction mode (CCM) boost stage.

Use Value: 1.85 V VCE(sat) and 0.85 mJ Eoff reduce total losses by ~18% vs. prior-gen 650 V IGBTs, improving system efficiency to >98.2%.

Use Scenario: Primary-side inverter in 5–8 kVA arc welding machines with soft-switching ZCS topology.

IC Role / Device Role / Timing Role: Main switching device in asymmetrical half-bridge with resonant turn-on and controlled turn-off.

Use Value: Stable VCE(sat) over temperature and low Eoff allow consistent arc stability and duty cycle extension to 60% at 175 °C junction.

ZCS Resonant ConverterIndustrial Motor Drive Output Stage

Use Scenario: Zero-current-switching inverter for induction heating or high-reliability SMPS.

IC Role / Device Role / Timing Role: Hard-commutated switch with controlled di/dt during turn-off and zero-current turn-on assisted by resonant tank.

Use Value: 92 ns trr and 34 A IRRM at 25 °C ensure clean current zero-crossing detection and minimal tail current interference.

Use Scenario: Output bridge in 7.5 kW HVAC inverter with field-oriented control.

IC Role / Device Role / Timing Role: High-current, high-repetition-rate switching element in 3-phase inverter leg.

Use Value: 175 °C Tvj(max) and 0.6 K/W Rth(j-c) support compact heatsink design while maintaining >10-year lifetime under 45 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT + diode module applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N65ES5Lower IC (40 A), higher VCE(sat) (1.95 V), same 650 V rating and TO-247-3 package.Suitable for ≤8 kW PFC but lacks parallel capability due to weaker VCE(sat) tempco.Select when cost sensitivity outweighs power density and thermal margin requirements.
FGH60N60SMD600 V rating, 60 A, lower Eoff (0.72 mJ), but no enhanced creepage; standard TO-247-3 package.Not rated for 650 V DC bus; requires additional PCB isolation measures for industrial mains input.Choose only for 400 V AC input systems where creepage >4.8 mm is not mandated.

Compared with IKW40N65ES5 and FGH60N60SMD, IKWH60N65WR6 uniquely combines 650 V rating, 60 A current, enhanced isolation, and parallel-ready VCE(sat) behavior-making it the only option qualified for high-reliability, high-power PFC and welding applications requiring reinforced insulation.

Availability

IKWH60N65WR6 is available at Aetrix Electronics and suitable for PFC boost converters, IGBT welding inverters, ZCS resonant converters, and industrial motor drive output stages requiring stable component supply and long-term industrial qualification.

Supply support for IKWH60N65WR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ 5 WR6 product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where enhanced creepage, low switching loss, and thermal robustness are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for IKWH60N65WR6?

The absolute maximum gate-emitter voltage is ±20 V DC, with transient tolerance up to ±30 V for pulses ≤10 µs and duty cycle <1%. Exceeding ±20 V continuously risks permanent gate oxide damage; gate driver circuits must include clamping or active regulation to maintain safe operating limits.

Does IKWH60N65WR6 require a negative gate voltage for reliable turn-off?

No, reliable turn-off is achieved with 0 V gate drive; however, applying –5 V to –10 V improves noise immunity and reduces risk of spurious turn-on in high-dV/dt environments. The device's VGE(th) (3.2–4.8 V) provides sufficient margin against false triggering without mandatory negative bias.

Can IKWH60N65WR6 be used in parallel configurations?

Yes-its positive temperature coefficient of VCE(sat) ensures inherent current balancing across paralleled units. Successful implementation requires matched gate drive loop inductance, symmetrical PCB layout, and identical thermal mounting to avoid thermal runaway; no external emitter resistors are needed.

What is the diode's reverse recovery behavior under high-temperature conditions?

At 175 °C, the diode's trr increases to 121 ns and Qrr rises to 3.8 µC versus 92 ns and 2.3 µC at 25 °C. This results in ~65% higher reverse recovery loss, necessitating gate resistor tuning and snubber optimization in high-temperature PFC designs to maintain EMI compliance.

IKWH60N65WR6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™ 5 WR6
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
100 A
Current - Collector Pulsed (Icm):
180 A
Vce(on) (Max) @ Vge, Ic:
1.85V @ 15V, 60A
Power - Max:
240 W
Switching Energy:
1.82mJ (on), 850µJ (off)
Input Type:
Standard
Gate Charge:
174 nC
Td (on/off) @ 25°C:
35ns/311ns
Test Condition:
400V, 60A, 15Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-32

IKWH60N65WR6XKSA1 FAQ

1.How can I place an order for IKWH60N65WR6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKWH60N65WR6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH60N65WR6XKSA1 reliable?

The price and inventory of IKWH60N65WR6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH60N65WR6XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH60N65WR6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH60N65WR6XKSA1 transactions.

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IKWH60N65WR6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH60N65WR6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH60N65WR6XKSA1?

For technical support, including IKWH60N65WR6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH60N65WR6XKSA1 requirements.

6.How does Aetrix verify that IKWH60N65WR6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH60N65WR6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH60N65WR6XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH60N65WR6XKSA1?

All IKWH60N65WR6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH60N65WR6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH60N65WR6XKSA1 part is unused and in its original packaging.

Return procedure for IKWH60N65WR6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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