Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IKWH60N67PR7XKSA1

Part No.:
IKWH60N67PR7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-3
Datasheet:
AetrixIKWH60N67PR7XKSA1.pdf
Description:
IKWH60N67PR7XKSA1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:240

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IKWH60N67PR7XKSA1 from Infineon is a reverse-conducting TRENCHSTOP™ IGBT 7 PR7 rated at 670 V VCE, 60 A IC, with 1.4 V typical VCE(sat) at 25°C and optimized monolithic diode for boost PFC stages in high-frequency, high-power AC-DC conversion. It delivers improved EMI behavior via lower dv/dt and supports industrial-grade operation up to 175°C junction temperature.

For engineers reviewing the IKWH60N67PR7XKSA1 datasheet, IKWH60N67PR7XKSA1 pinout, IKWH60N67PR7XKSA1 application, or IKWH60N67PR7XKSA1 equivalent, key selection criteria include its 0.53 K/W Rth(j-c), 148 nC gate charge, positive VCE(sat) temperature coefficient enabling stable parallel operation, and PG-TO247-3-U04 package with >4.8 mm creepage distance.

Technical Context

This RC-IGBT integrates a co-packaged, optimized fast-recovery diode with matched thermal and switching characteristics to eliminate external anti-parallel diode requirements in single-switch boost PFC topologies. Its 17.2 pF Cres and 3311 pF Cies support precise gate drive design for <100 kHz–300 kHz operation.

The device employs TRENCHSTOP™ 7 cell architecture with field-stop doping and PR7 (Pulse-optimized, Reverse-conducting) layout to achieve low conduction loss (1.4 V VCE(sat)) and reduced switching energy (Eon = 1.28 mJ, Eoff = 0.78 mJ at 25°C), while maintaining robust SOA and 2 kV HBM ESD rating.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 670 V - Maximum blocking voltage compatible with 400 VAC input rectified to ~560 VDC bus in industrial/commercial PFC designs.
IC 60 A - Continuous collector current at Tc = 25°C; derates to 75 A at Tc = 100°C, supporting high-power PFC stages up to ~15 kW.
VCE(sat) 1.4 V (typ.) at 25°C - Low conduction loss reduces thermal stress and improves efficiency in high-current boost inductors.
Eoff 0.78 mJ at 25°C - Enables higher switching frequencies without excessive heat generation in thermally constrained enclosures.
Rth(j-c) 0.53 K/W - Enables direct heatsink mounting with minimal thermal interface resistance for compact, high-power-density PFC modules.
Cres 17.2 pF - Low reverse transfer capacitance minimizes Miller-induced turn-on risk and simplifies gate driver design.
Tvj −40 to +175 °C - Industrial-grade junction temperature range ensures reliability across HVAC ambient extremes and sustained overload conditions.

Pinout & Package

Supplied in PG-TO247-3-U04 package with isolated tab, 3-pin through-hole configuration, and creepage/clearance distances exceeding 4.8 mm / 3.4 mm for reinforced insulation in 600 V systems.

Pin/Terminal Circuit Role Design Meaning
Collector (C) Main power output terminal Connected to boost inductor output and DC bus capacitor; carries full load current and withstands full VCE blocking stress.
Gate (G) Control input High-impedance MOS-controlled terminal requiring 15 V drive; 148 nC QG dictates gate driver peak current capability.
Emitter (E) Power return and reference node Serves as common reference for both IGBT and integrated diode; internal emitter inductance of 13 nH impacts high-di/dt switching stability.

Key Features

Feature Design Value
Integrated monolithic diode Optimized for PFC freewheeling with matched VF and recovery characteristics-eliminates discrete diode placement and layout parasitics.
Positive VCE(sat) tempco Enables inherent current sharing in paralleled configurations without external ballasting resistors or active current balancing circuits.
Low dv/dt EMI signature Reduces conducted EMI filter size and cost in Class B compliance designs for residential/commercial HVAC inverters and aircon units.
2 kV HBM ESD rating Supports robust handling during PCB assembly and field service without additional protection circuitry on gate inputs.
JEDEC47/20/22 qualified Validated for industrial applications including temperature cycling, humidity bias, and high-temperature operating life per industry reliability standards.

Applications

Residential Air Conditioning Commercial HVAC Systems

Use Scenario: Single-phase 230 VAC input boost PFC stage in inverter-driven split-system air conditioners.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost converter, operating at 60–100 kHz.

Use Value: 1.4 V VCE(sat) and low Eoff reduce thermal load on heatsink, enabling fanless or low-noise cooling in wall-mounted indoor units.

Use Scenario: Three-phase 400 VAC input front-end PFC in rooftop HVAC units with >10 kW output.

IC Role / Device Role / Timing Role: High-current switch in interleaved boost topology, leveraging parallel capability and 175°C Tvj rating.

Use Value: 0.53 K/W Rth(j-c) and stable VCE(sat) over temperature allow compact heatsink integration within space-constrained rooftop enclosures.

Industrial Motor Drives Renewable Energy Inverters

Use Scenario: Active front-end (AFE) rectifier in servo drives requiring regenerative braking and low-harmonic input current.

IC Role / Device Role / Timing Role: Bidirectional switch in Vienna rectifier configuration, using integrated diode for reverse conduction path.

Use Value: Monolithic diode with matched thermal tracking ensures balanced conduction losses between forward and reverse paths, improving THD performance.

Use Scenario: Boost stage in string-level solar inverters converting 200–1000 VDC PV input to stable 800 VDC bus.

IC Role / Device Role / Timing Role: High-voltage, high-efficiency switch in high-frequency boost converter with wide input voltage range.

Use Value: 670 V VCE rating and low Cres enable reliable operation at maximum system voltage with margin, reducing failure risk under transient overvoltage events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar reverse-conducting IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKW40N65ES5XKSA1 650 V VCE, 40 A IC, 1.65 V VCE(sat), TO247-3L package, no integrated diode Requires external anti-parallel diode; lower current rating limits use to ≤8 kW PFC Select when lower cost and proven legacy design compatibility outweigh need for monolithic integration and higher current headroom.
IDW60C65D1XKSA1 650 V VR(RM), 60 A IF, discrete SiC Schottky diode only, no IGBT No switching capability-used only as freewheeling element alongside separate IGBT Choose only for hybrid solutions where independent optimization of diode and IGBT is required, e.g., ultra-high-frequency PFC with SiC diode + Si IGBT.

Compared with IKW40N65ES5XKSA1 and IDW60C65D1XKSA1, IKWH60N67PR7XKSA1 uniquely combines 60 A current capability, 670 V rating, integrated diode, and low VCE(sat) in one package-reducing component count, layout area, and thermal mismatch risk in high-power PFC designs.

Availability

IKWH60N67PR7XKSA1 is available at Aetrix Electronics and suitable for residential air conditioning, commercial HVAC systems, and industrial motor drives requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKWH60N67PR7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-frequency PFC and soft-switching inverter applications where low conduction loss, controlled EMI, and thermal robustness are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG(on)/RG(off) = 9.8 Ω for characterization, yielding td(on) = 20 ns and td(off) = 208 ns at 25°C. For stable operation above 100 kHz, RG should not exceed 15 Ω to maintain adequate dv/dt control and avoid shoot-through risk; values below 5 Ω increase EMI but improve switching speed.

Does the integrated diode support bidirectional current in all operating modes?

Yes-the monolithic diode is rated for repetitive peak reverse voltage VRRM = 670 V and pulsed forward current IFpulse = 5 A. It conducts during IGBT off-time in boost PFC, providing the freewheeling path; its recovery behavior is co-optimized with the IGBT for minimal tail current and voltage overshoot.

Can IKWH60N67PR7XKSA1 be used in hard-switched ZVS resonant converters?

No-it is not designed for zero-voltage switching topologies. The device lacks the optimized tail current profile and low Coss required for ZVS; its 44 pF Coes and 17.2 pF Cres are tuned for hard-switched CCM boost PFC, not resonant tank interaction.

Is the PG-TO247-3-U04 package electrically isolated?

Yes-the "U04" suffix denotes an isolated tab variant: the collector is internally insulated from the mounting surface, enabling direct heatsink attachment without insulating pads in floating-ground configurations, provided creepage and clearance distances (>4.8 mm) are maintained in PCB layout.

IKWH60N67PR7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TRENCHSTOP™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
670 V
Current - Collector (Ic) (Max):
122 A
Current - Collector Pulsed (Icm):
180 A
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
283 W
Switching Energy:
1.28mJ (on), 780µJ (off)
Input Type:
Standard
Gate Charge:
148 nC
Td (on/off) @ 25°C:
20ns/208ns
Test Condition:
400V, 60A, 9.8Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-32

IKWH60N67PR7XKSA1 FAQ

1.How can I place an order for IKWH60N67PR7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKWH60N67PR7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH60N67PR7XKSA1 reliable?

The price and inventory of IKWH60N67PR7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH60N67PR7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH60N67PR7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH60N67PR7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKWH60N67PR7XKSA1?

IKWH60N67PR7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH60N67PR7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH60N67PR7XKSA1?

For technical support, including IKWH60N67PR7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH60N67PR7XKSA1 requirements.

6.How does Aetrix verify that IKWH60N67PR7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH60N67PR7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH60N67PR7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH60N67PR7XKSA1?

All IKWH60N67PR7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH60N67PR7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH60N67PR7XKSA1 part is unused and in its original packaging.

Return procedure for IKWH60N67PR7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKWH60N67PR7XKSA1 Tags

  • IKWH60N67PR7XKSA1
  • IKWH60N67PR7XKSA1 PDF
  • IKWH60N67PR7XKSA1 Datasheet
  • IKWH60N67PR7XKSA1 Specifications
  • IKWH60N67PR7XKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IKWH60N67PR7XKSA1
  • Buy IKWH60N67PR7XKSA1
  • IKWH60N67PR7XKSA1 Price
  • IKWH60N67PR7XKSA1 Distributor
  • IKWH60N67PR7XKSA1 Supplier
  • IKWH60N67PR7XKSA1 Wholesale
Related Products
STGD3NB60SDT4
STGD3NB60SDT4

STMicroelectronics

HGTD1N120BNS9A
HGTD1N120BNS9A

onsemi

STGF7NB60SL
STGF7NB60SL

STMicroelectronics

FGD5T120SH
FGD5T120SH

onsemi

STGB3NC120HDT4
STGB3NC120HDT4

STMicroelectronics

IKP20N60TXKSA1
IKP20N60TXKSA1

Infineon Technologies

STGW30H60DFB
STGW30H60DFB

STMicroelectronics

STGB30M65DF2
STGB30M65DF2

STMicroelectronics

IKB20N60TATMA1
IKB20N60TATMA1

Infineon Technologies

STGB30V60DF
STGB30V60DF

STMicroelectronics

IKW30N60DTPXKSA1
IKW30N60DTPXKSA1

Infineon Technologies

ISL9V3040P3
ISL9V3040P3

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER