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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKWH75N65EH7XKSA1

Name: IKWH75N65EH7XKSA1
Brand: Infineon Technologies
SKU: IKWH75N65EH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKWH75N65EH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-3

Datasheet:: IKWH75N65EH7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO247-3

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Product details

Overview

IKWH75N65EH7XKSA1 from Infineon is a 650 V, 75 A TRENCHSTOP™ IGBT7 co-packed with an emitter-controlled 7 diode in a PG-TO247-3-STD package. It delivers low V_CE(sat) (1.65 V typ. @ 25 °C), fast switching (t_d(off) = 195 ns), and soft reverse recovery (t_rr = 89 ns), enabling high-efficiency hard-switching in industrial UPS and EV-charging inverters.

For engineers reviewing the IKWH75N65EH7XKSA1 datasheet, IKWH75N65EH7XKSA1 pinout, IKWH75N65EH7XKSA1 application, or IKWH75N65EH7XKSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.34 K/W), gate charge (150 nC), diode Q_rr (1.62 µC), and humidity robustness per JEDEC22-A110.

Technical Context

This IGBT employs TRENCHSTOP™ IGBT7 silicon with optimized carrier lifetime control and field-stop design to achieve simultaneous low conduction loss and reduced switching energy. Its integrated Emitter Controlled 7 diode features tailored minority-carrier lifetime for low Q_rr and controlled dI_rr/dt (−1510 A/µs).

The device is characterized for two- and three-level topologies under hard-switching conditions at V_CC = 400 V, R_G(on/off) = 10 Ω, and T_vj up to 175 °C. Dynamic test circuit includes L_σ = 8 nH and C_σ = 30 pF, with energy losses including tail current and diode recovery components.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Maximum blocking voltage for 600 V-class DC bus applications with margin.
I_C	75 A - Continuous collector current rating at T_c = 100 °C, defining usable output power in inverters.
V_CE(sat)	1.65 V (typ., 25 °C) - Low saturation voltage reduces conduction loss and heatsink sizing.
E_off	1.4 mJ (25 °C) - Low turn-off energy enables higher switching frequencies without excessive loss.
t_rr	89 ns (25 °C) - Fast, soft diode recovery minimizes voltage overshoot and EMI in bridge legs.
R_th(j-c)	0.34 K/W - Low junction-to-case thermal resistance supports high-power density thermal design.
Q_G	150 nC - Gate charge value determines required driver peak current and gate resistor selection.

Pinout & Package

Package: PG-TO247-3-STD (standard through-hole, 3-pin, isolated mounting flange). Pin assignment confirmed per Infineon package outline PG-TO247-3-STD-NN4.8.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side current path terminal	Connected to DC+ bus in half-bridge; carries full load current and withstands 650 V blocking.
Gate (G)	Control input for IGBT channel	Requires ±20 V-rated drive; 150 nC total charge defines driver strength requirement.
Emitter (E)	Current return path and reference node	Shared emitter node for IGBT and antiparallel diode; low-inductance layout critical for switching stability.

Key Features

Feature	Design Value
Low V_CE(sat) + low E_off	Enables >98% efficiency in 10–30 kW industrial UPS at 16 kHz switching frequency.
Soft, fast-recovery diode	Q_rr = 1.62 µC and t_rr = 89 ns reduce snubber stress and dv/dt-induced shoot-through risk.
Humidity robustness	Qualified per JEDEC22-A110 - ensures long-term reliability in humid environments without conformal coating.
Optimized for multi-level topologies	Controlled tail current and symmetric switching behavior support stable operation in NPC and T-type inverters.

Applications

Industrial UPS

EV-Charging Stations

Use Scenario: Three-phase 15–30 kVA online double-conversion UPS with battery backup and active PFC.

IC Role / Device Role / Timing Role: Main inverter switch in output stage, operating at 12–16 kHz with sinusoidal PWM.

Use Value: Low V_CE(sat) and soft diode reduce conduction and recovery losses, improving system efficiency by ≥0.8% vs. IGBT5.

Use Scenario: 22 kW AC Level 2 and 150 kW DC fast-charging power conversion module.

IC Role / Device Role / Timing Role: Switching element in interleaved boost and inverter stages, handling bidirectional power flow.

Use Value: 175 °C max T_vj rating and low R_th(j-c) allow compact heatsink design under continuous 75 A load.

String Inverters

Industrial Welding Equipment

Use Scenario: 10–25 kW photovoltaic string inverter with transformerless topology and leakage current suppression.

IC Role / Device Role / Timing Role: High-side switch in H-bridge output stage, switching at 18–22 kHz for low-audio-noise operation.

Use Value: Very low switching energy (E_ts = 3.8 mJ @ 25 °C) enables higher frequency without thermal derating.

Use Scenario: IGBT-based inverter welding power supply with 300 A pulsed output and arc stabilization feedback.

IC Role / Device Role / Timing Role: Primary switching device in resonant DC-DC stage, subjected to repetitive 300 A pulse currents.

Use Value: 300 A pulsed current rating and robust short-circuit withstand time (>1 µs at 650 V) ensure arc stability under fault transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES5	Lower I_C (40 A), higher V_CE(sat) (1.75 V), same 650 V rating and TO247-3 package.	Suitable for ≤15 kW designs where lower cost and reduced thermal mass are prioritized over peak power density.	Select when system peak current stays below 40 A and board space allows larger heatsink for higher V_CE(sat).
IKWH50N65EH7	Same IGBT7 die and diode, but rated for 50 A continuous (T_c = 100 °C); identical V_CE(sat), E_off, and package.	Better suited for thermally constrained layouts where 75 A rating causes excessive case temperature rise.	Choose when thermal interface resistance or ambient temperature limits junction temperature below 175 °C at 75 A.

Compared with IKW40N65ES5 and IKWH50N65EH7, IKWH75N65EH7XKSA1 provides highest continuous current capability in the same footprint, enabling single-device scalability from 15 kW to 30 kW without changing PCB layout or heatsink interface.

Availability

IKWH75N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging infrastructure, and string inverter designs requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKWH75N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-power-density hard-switching inverters in industrial and grid-connected applications.

FAQ

What is the maximum allowable gate-emitter voltage for continuous operation?

The absolute maximum continuous gate-emitter voltage is ±20 V. Transient excursions up to ±30 V are permitted for ≤10 µs with duty cycle <1%. Exceeding ±20 V continuously risks oxide degradation and threshold voltage shift, especially at elevated temperatures above 125 °C.

Does IKWH75N65EH7XKSA1 require negative gate drive for reliable turn-off?

No. The device is fully compatible with 0 V to +15 V gate drive. However, applying −5 V to −8 V during turn-off reduces Miller-induced false triggering in high-dv/dt environments and improves noise immunity in multi-module parallel configurations.

How does the integrated diode differ from standard FRD counterparts?

The emitter-controlled 7 diode uses tailored lifetime control and optimized doping to achieve lower Q_rr (1.62 µC) and softer recovery (dI_rr/dt = −1510 A/µs) than conventional fast recovery diodes. This reduces voltage overshoot and EMI without external snubbers in bridge-leg configurations.

Is this part qualified for use in outdoor EV-charging enclosures?

Yes. It is humidity robust per JEDEC22-A110 and rated for T_stg = −55 °C to +150 °C. When mounted with appropriate conformal coating and thermal interface material, it meets IP65-rated outdoor charging station requirements per IEC 62196 and UL 2231.

IKWH75N65EH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 75A

Power - Max:: 341 W

Switching Energy:: 2.42mJ (on), 1.4mJ (off)

Input Type:: Standard

Gate Charge:: 150 nC

Td (on/off) @ 25°C:: 25ns/45ns

Test Condition:: 400V, 75A, 10Ohm, 15V

Reverse Recovery Time (trr):: 89 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-32

IKWH75N65EH7XKSA1 FAQ

1.How can I place an order for IKWH75N65EH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKWH75N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKWH75N65EH7XKSA1 reliable?

The price and inventory of IKWH75N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKWH75N65EH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKWH75N65EH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKWH75N65EH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKWH75N65EH7XKSA1?

IKWH75N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKWH75N65EH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKWH75N65EH7XKSA1?

For technical support, including IKWH75N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKWH75N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKWH75N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKWH75N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKWH75N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKWH75N65EH7XKSA1?

All IKWH75N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKWH75N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKWH75N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKWH75N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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