Infineon Technologies IKY100N120CH7XKSA1

Overview

IKY100N120CH7XKSA1 from Infineon is a 1200 V, 100 A high-speed TRENCHSTOP™ IGBT 7 co-packed with a full-rated 100 A ultra-fast soft-commutating Rapid diode in a PG-TO247-4-PLUS package. It delivers V_CE(sat) = 1.7 V at 25°C, t_r = 18 ns, and Q_rr = 3.09 µC, enabling high-efficiency hard-switching in 3-level NPC/T-type inverters for industrial UPS and EV-charging systems.

For engineers reviewing the IKY100N120CH7XKSA1 datasheet, IKY100N120CH7XKSA1 pinout, IKY100N120CH7XKSA1 application, or IKY100N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, low E_off (2.65 mJ @ 25°C), and integrated diode's soft recovery (trr = 99 ns) - all critical for minimizing switching losses and EMI in high-frequency 1200 V power conversion.

Technical Context

This device implements Infineon's 7th-generation TRENCHSTOP IGBT process with field-stop trench gate structure and optimized carrier lifetime control, delivering reduced tail current and lower E_ts (5.02 mJ @ 25°C). Its co-packaged Rapid diode features emitter-controlled design and ultra-low Q_rr, ensuring soft reverse recovery and minimal voltage overshoot during commutation.

The 4-pin TO247-4-PLUS package separates the Kelvin emitter (pin 4) from the power emitter (pin 2), enabling precise gate drive referencing to reduce dynamic V_CE measurement error and improve switching consistency across temperature. Thermal resistance R_th(j-c) is 0.16 K/W for the IGBT and 0.3 K/W for the diode, supporting high-power density designs up to 175°C junction temperature.

Key Specifications

Pinout & Package

Package: PG-TO247-4-PLUS (4-pin variant with Kelvin emitter), RoHS-compliant, Pb-free lead plating. Dimensions per Infineon outline NN5.1; mounting hole M3, thermal pad area 10.2 × 15.7 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 1200 V IGBT + diode applications.

Compared with IXYN100N120C3 and STGY100H12DF3, IKY100N120CH7XKSA1 provides superior high-frequency efficiency via Kelvin emitter control, lowest Q_rr, and tighter thermal resistance - making it the only choice for space-constrained, >15 kHz, 175°C-rated applications like OBCs and modular UPS.

Availability

IKY100N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, EV on-board chargers, and solar string inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's qualified wafer fab and assembly lines.

Supply support for IKY100N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability 1200 V hard-switching power conversion in demanding industrial and transportation applications.

FAQ

What is the purpose of the Kelvin emitter (pin 4) on IKY100N120CH7XKSA1?

The Kelvin emitter provides a dedicated low-inductance reference path for the gate driver's source terminal, decoupling gate-loop voltage sensing from high di/dt power emitter voltage drops. This ensures accurate V_GE control during fast switching, reducing timing jitter and improving turn-off consistency-especially critical in parallel configurations and high-frequency ZVS designs.

Can IKY100N120CH7XKSA1 replace older TRENCHSTOP 5 or 6 IGBTs in existing designs?

Yes, with layout and gate drive adjustments: the Kelvin emitter requires separate routing from the power emitter, and gate resistor values may need reduction (e.g., from 10 Ω to 4 Ω) to achieve specified t_d(off). Thermal design benefits from lower R_th(j-c), but maximum junction temperature remains 175°C-no derating needed if original design operated below that limit.

How does the Rapid diode differ from standard FRDs in this co-packaged device?

The Rapid diode uses emitter-controlled doping and tailored carrier lifetime to achieve soft reverse recovery (trr = 99 ns, low Irrm) and ultra-low Q_rr (3.09 µC). Unlike standard fast recovery diodes, it avoids abrupt current collapse and voltage spikes, reducing snubber losses and EMI generation-key for meeting CISPR-22 Class B in compact EV charger enclosures.

Is IKY100N120CH7XKSA1 suitable for use in SiC hybrid configurations?

No-it is not designed as a SiC hybrid switch. Its gate threshold (V_GE(th) = 4.7–6.2 V) and transconductance (g_fs = 207 S) are optimized for 15 V gate drive with standard IGBT drivers. SiC hybrid use would require gate drive redesign, risk overvoltage during SiC turn-off, and forfeit the diode's soft-recovery advantage due to mismatched dynamics.