Infineon Technologies IKY120N120CH7XKSA1

Overview

IKY120N120CH7XKSA1 from Infineon is a 1200 V, 100 A high-speed TRENCHSTOP™ IGBT 7 co-packed with a full-rated 100 A ultra-fast recovery emitter-controlled 7 Rapid diode in PG-TO247-4-PLUS package. It delivers V_CE(sat) = 1.7 V at 25°C, t_r = 18 ns, and Q_rr = 3.09 µC, enabling high-efficiency hard-switching in 2-level inverters and 3-level NPC/T-type topologies for industrial UPS and EV charging systems.

For engineers reviewing the IKY120N120CH7XKSA1 datasheet, IKY120N120CH7XKSA1 pinout, IKY120N120CH7XKSA1 application, or IKY120N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, soft-commutating diode behavior, low E_off (2.65 mJ @ 25°C), and JEDEC-qualified industrial reliability up to 175°C junction temperature.

Technical Context

This device implements Infineon's 7th-generation TRENCHSTOP IGBT process with field-stop trench gate structure and optimized carrier lifetime control, delivering reduced switching losses while maintaining low conduction loss. Its integrated 7 Rapid diode features ultra-low Q_rr, soft reverse recovery (I_rrm = 98 A, dirr/dt = –2500 A/µs), and matched thermal characteristics to the IGBT die.

The PG-TO247-4-PLUS package provides four terminals - including separate Kelvin emitter (E_K) - enabling precise gate drive control and minimizing dynamic voltage overshoot during turn-off. The internal emitter inductance is specified at 13 nH (measured 5 mm from case), supporting high dv/dt robustness in fast-switching applications.

Key Specifications

Pinout & Package

IKY120N120CH7XKSA1 uses the PG-TO247-4-PLUS package (also designated TO247-4L), featuring four leads: Collector (C), Gate (G), Emitter (E), and Kelvin Emitter (E_K). The Kelvin emitter provides low-inductance gate loop return path for accurate V_GE control and improved switching stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT+diode module applications.

Compared with IKW40N120H3, IKY120N120CH7XKSA1 offers 2.5× higher current rating, Kelvin emitter for stable high-frequency switching, and 30% lower E_off; versus FF600R12ME4, it provides discrete flexibility, lower gate drive complexity, and TO247 compatibility for prototyping and medium-power designs.

Availability

IKY120N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, EV charging stations, and string solar inverters requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IKY120N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial inverters, UPS, and EV infrastructure where low conduction loss, soft switching behavior, and 175°C operation are critical.

FAQ

What is the purpose of the Kelvin emitter (E_K) pin on IKY120N120CH7XKSA1?

The Kelvin emitter (E_K) provides a dedicated low-inductance return path for the gate driver circuit, isolating gate loop current from main power current. This eliminates voltage drop across emitter lead inductance during switching transitions, ensuring accurate V_GE control and reducing dynamic overshoot-critical for stable operation at high dv/dt and in parallel configurations.

How does the 7 Rapid diode differ from standard FRDs in this co-packaged device?

The 7 Rapid diode features ultra-low Q_rr (3.09 µC), soft reverse recovery (I_rrm = 98 A, dirr/dt = –2500 A/µs), and matched thermal characteristics with the IGBT die. Unlike standard fast recovery diodes, it minimizes turn-on loss in complementary switches and suppresses voltage spikes during commutation-enabling reliable operation in 3-level NPC and T-type inverter topologies without snubbers.

Can IKY120N120CH7XKSA1 be paralleled directly without external balancing components?

Yes-its positive temperature coefficient of V_CE(sat) ensures inherent current sharing across paralleled devices as junction temperature rises. Testing confirms stable load distribution up to four devices in parallel under balanced layout and gate drive conditions. However, matched gate resistors, symmetrical PCB routing, and identical heatsink contact pressure remain essential for optimal performance.

What thermal interface materials are recommended for mounting IKY120N120CH7XKSA1?

Infineon recommends thermally conductive silicone-based pastes (e.g., Dow Corning TC-5623) or phase-change pads (e.g., Laird TPCM 600) with thermal conductivity ≥3.0 W/m·K. Mounting torque must be 1.5–2.0 N·m on M3 screws, and flatness tolerance of the heatsink surface should be ≤30 µm over the TO247 footprint to ensure uniform thermal resistance (R_th(j-c) = 0.16–0.21 K/W) and avoid localized hot spots.