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Infineon Technologies IKY120N65EH7XKSA1
- Part No.:
- IKY120N65EH7XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-4
- Datasheet:
-
IKY120N65EH7XKSA1.pdf
- Description:
- IGBT TRENCH FS 650V 160A TO247-4
- Quantity:
- Payment:
- Shipping:
Inventory:206
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Product details
Overview
IKY120N65EH7XKSA1 from Infineon is a 650 V, 120 A TRENCHSTOP™ IGBT7 co-packed with an emitter-controlled 7 diode in PG-TO247-4-U10 package. It delivers low VCE(sat) (1.4–1.65 V @ 120 A, 25 °C), fast switching (td(off) = 175 ns), and soft reverse recovery (trr = 64 ns @ 25 °C), enabling high-efficiency hard-switching inverters for industrial UPS and EV charging systems.
For engineers reviewing the IKY120N65EH7XKSA1 datasheet, IKY120N65EH7XKSA1 pinout, IKY120N65EH7XKSA1 application, or IKY120N65EH7XKSA1 equivalent, key selection criteria include VCE(sat) vs. temperature stability, diode Qrr and dIrr/dt performance, thermal resistance (Rth(j-c) = 0.23 K/W for IGBT), and gate charge (QG = 244 nC) for driver sizing.
Technical Context
This IGBT7 device uses field-stop trench gate technology to achieve simultaneous reduction in conduction and switching losses. Its integrated Emitter Controlled 7 diode features low forward voltage (VF = 1.65 V typ. @ 120 A, 25 °C) and controlled reverse recovery with minimal tail current and oscillation.
The 4-pin TO247-4 package separates the Kelvin emitter (pin 4) from the power emitter (pin 2), enabling precise gate drive control and minimizing gate loop inductance. This architecture supports stable operation up to 175 °C junction temperature under hard-switching conditions in two- and three-level topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 650 V - Maximum blocking voltage for use in 400–600 V DC-link applications like string inverters and industrial UPS. |
| IC | 120 A - Continuous collector current at Tc = 100 °C, defining thermal design margin for heatsink sizing. |
| VCE(sat) | 1.4–1.65 V @ 120 A, 15 V VGE, 25 °C - Low conduction loss enabling >98% efficiency in high-power converters. |
| td(off) + tf | 194 ns typ. @ 400 V, 120 A, 25 °C - Fast turn-off enables high-frequency operation (>20 kHz) without excessive switching loss penalty. |
| QG | 244 nC - Gate charge value used to calculate required peak gate driver current (e.g., 24.4 A for 10 ns rise time). |
| Rth(j-c) (IGBT) | 0.23–0.3 K/W - Junction-to-case thermal resistance directly determines maximum allowable case temperature for safe 175 °C operation. |
| trr | 64–159 ns @ 400 V, 120 A - Diode reverse recovery time impacts snubber design and EMI generation in bridge legs. |
Pinout & Package
Package: PG-TO247-4-U10 - 4-pin isolated tab package with Kelvin emitter configuration for accurate gate control and reduced Miller effect.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Collector) | Main power output terminal | Connects to DC-link positive in half-bridge; carries full load current and withstands 650 V blocking. |
| 2 (Emitter – Power) | Main emitter return path | Carries full load current to DC-link negative; must be low-inductance layout for switching stability. |
| 3 (Gate) | Control input | Drives IGBT channel; requires low-impedance gate driver due to 244 nC QG and 6525 pF Cies. |
| 4 (Emitter – Kelvin) | Sense/reference emitter | Provides gate drive reference point independent of power emitter voltage drop, enabling precise VGE control. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) with flat tempco | VCE(sat) increases only ~0.25 V from 25 °C to 175 °C - maintains efficiency across wide operating temperature range. |
| Soft, fast diode recovery | Qrr = 2.8 µC @ 25 °C, dIrr/dt = −2470 A/µs - reduces voltage overshoot and EMI during commutation. |
| Kelvin emitter configuration | Separate sense emitter (pin 4) eliminates gate drive error from emitter inductance - improves switching consistency and noise immunity. |
| Humidity robustness | Qualified per JEDEC J-STD-020 moisture sensitivity level 1 - enables standard SMT reflow without baking or special handling. |
| PSpice model availability | Verified SPICE model provided by Infineon - supports accurate loss simulation and gate driver design before prototyping. |
Applications
| Industrial UPS | EV Charging Stations |
|---|---|
Use Scenario: Three-phase IGBT-based inverter stage converting DC battery or rectified AC to clean 50/60 Hz sine wave output. IC Role / Device Role / Timing Role: Main switching device in output inverter leg; operates at 8–16 kHz with precise dead-time control. Use Value: Low VCE(sat) and soft diode reduce conduction and commutation losses, improving system efficiency from 94% to 96.5% at full load. |
Use Scenario: DC fast charger power stage using two-level or three-level NPC topology to convert AC grid to 200–1000 V DC for battery charging. IC Role / Device Role / Timing Role: High-side/low-side switch in active front-end or DC-DC isolation stage; switches at 10–25 kHz. Use Value: Optimized for hard switching with low Eoff (1.5 mJ @ 25 °C) and Kelvin emitter support enables reliable 100+ kW operation with <100 µs fault response. |
| String Solar Inverters | Industrial Welding Equipment |
Use Scenario: Single-phase or three-phase inverter converting PV array DC to grid-synchronized AC, often in transformerless topologies. IC Role / Device Role / Timing Role: Bridge-leg switch in H-bridge or NPC configuration; handles bidirectional reactive power flow. Use Value: Low leakage (ICES = 35 µA @ 25 °C) and high humidity robustness ensure long-term reliability in outdoor enclosures with wide ambient swings. |
Use Scenario: Inverter-based arc welding power supply delivering tightly regulated 100–500 A DC output with high dynamic response. IC Role / Device Role / Timing Role: Primary switching element in resonant or hard-switched inverter stage; subjected to repetitive short-circuit stress. Use Value: Turn-off SOA rated to 480 A at 650 V ensures robust short-circuit withstand (10 µs) without desaturation protection complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IKW40N65ES5 | 650 V, 40 A, TO247-3 package, no Kelvin emitter, higher VCE(sat) (1.75 V typ.) | Limited to lower-current (<60 A) designs; lacks separate emitter sensing for precision gate control. | Select when cost-sensitive, lower-power (<5 kW), and gate drive simplicity outweighs efficiency gains. |
| FGH40N60UFDTU | 600 V, 40 A, TO247-3, older IGBT4 process, higher switching loss (Eoff ≈ 2.8 mJ) | Not rated for 650 V DC-link; unsuitable for 1000 V-class EV chargers or string inverters above 800 V. | Consider only for legacy 400–500 V systems where qualification time is critical and 650 V margin is unnecessary. |
Compared with IKW40N65ES5 and FGH40N60UFDTU, IKY120N65EH7XKSA1 provides 3× current rating, Kelvin emitter accuracy, and 30% lower conduction loss - making it uniquely suited for next-generation 10–30 kW industrial and EV power stages requiring both density and thermal headroom.
Availability
IKY120N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV charging stations, and string solar inverters requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp-up.
Supply support for IKY120N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.
This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial motor drives, renewable energy, and electric vehicle infrastructure.
FAQ
What is the purpose of the Kelvin emitter (pin 4) on IKY120N65EH7XKSA1?
The Kelvin emitter provides a dedicated low-current reference path for the gate driver, decoupling gate control from voltage drop across the power emitter bond wires and PCB traces. This eliminates gate drive distortion caused by emitter inductance during fast switching, ensuring consistent VGE and reducing risk of shoot-through in bridge configurations.
Can IKY120N65EH7XKSA1 replace older IGBTs like IKW25N120H3 in existing designs?
No - IKY120N65EH7XKSA1 is not a drop-in replacement for 1200 V devices. It is rated for 650 V blocking and has different pinout (4-pin vs. 3-pin), gate threshold (2.9–4.8 V), and thermal characteristics. Direct substitution would require redesign of gate drive, snubbers, and thermal management for the lower voltage class and Kelvin configuration.
What is the maximum recommended gate resistor for reliable switching?
Based on datasheet test conditions (RG(on/off) = 10 Ω), and considering QG = 244 nC and typical driver capability, RG should be ≤15 Ω for turn-on and ≤22 Ω for turn-off to maintain td(on) < 30 ns and td(off) < 200 ns. Higher values increase switching loss and risk of cross-conduction in half-bridges.
Is IKY120N65EH7XKSA1 qualified for automotive underhood applications?
No - it is qualified for industrial applications per JEDEC47/20/22, but not AEC-Q101. It lacks automotive-specific stress testing (e.g., temperature cycling, humidity bias, ESD levels) and does not meet the extended temperature range (−40 °C to 150 °C case) or failure rate requirements for automotive power modules.
IKY120N65EH7XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TRENCHSTOP™
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 650 V
- Current - Collector (Ic) (Max):
- 160 A
- Current - Collector Pulsed (Icm):
- 480 A
- Vce(on) (Max) @ Vge, Ic:
- 1.65V @ 15V, 120A
- Power - Max:
- 498 W
- Switching Energy:
- 1.7mJ (on), 1.5mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 244 nC
- Td (on/off) @ 25°C:
- 25ns/175ns
- Test Condition:
- 400V, 120A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- 64 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4-2
IKY120N65EH7XKSA1 FAQ
1.How can I place an order for IKY120N65EH7XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKY120N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKY120N65EH7XKSA1 reliable?
The price and inventory of IKY120N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKY120N65EH7XKSA1 is usually 5 days.
3.What payment methods are accepted for IKY120N65EH7XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKY120N65EH7XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKY120N65EH7XKSA1?
IKY120N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKY120N65EH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKY120N65EH7XKSA1?
For technical support, including IKY120N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKY120N65EH7XKSA1 requirements.
6.How does Aetrix verify that IKY120N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?
All IKY120N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKY120N65EH7XKSA1 meets industry standards.
7.What is the process for return or replacement of IKY120N65EH7XKSA1?
All IKY120N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKY120N65EH7XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKY120N65EH7XKSA1 part is unused and in its original packaging.
Return procedure for IKY120N65EH7XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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