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Infineon Technologies IKY150N65EH7XKSA1

Part No.:
IKY150N65EH7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-4
Datasheet:
AetrixIKY150N65EH7XKSA1.pdf
Description:
IGBT TRENCH FS 650V 160A TO247-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:163

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Product details

Overview

IKY150N65EH7XKSA1 from Infineon is a 650 V, 150 A TRENCHSTOP™ IGBT7 co-packed with an Emitter Controlled 7 diode in PG-TO247-4-PLUS package. It delivers low VCE(sat) (1.4–1.65 V @ 150 A, 25 °C), ultra-low switching losses (Eon/Eoff = 2.3/2.9 mJ @ 400 V), and soft reverse recovery (trr = 65 ns @ 25 °C). Used in industrial UPS inverters for high-efficiency DC–AC conversion under hard-switching conditions.

For engineers reviewing the IKY150N65EH7XKSA1 datasheet, IKY150N65EH7XKSA1 pinout, IKY150N65EH7XKSA1 application, or IKY150N65EH7XKSA1 equivalent, key selection criteria include VCE(sat) stability over temperature, diode softness (low Irrm, low dIrr/dt), thermal resistance (Rth(j-c) = 0.19 K/W for IGBT), and 4-pin Kelvin emitter configuration for gate drive integrity.

Technical Context

This device implements Infineon's 7th-generation trench-gate field-stop IGBT structure with optimized carrier lifetime control, enabling simultaneous reduction of conduction and switching losses. Its integrated EC7 diode features tailored minority-carrier lifetime and doping profile to suppress voltage overshoot and oscillation during turn-off.

The 4-pin TO247-4-PLUS package separates power and Kelvin emitter terminals, decoupling gate loop inductance from main current path-critical for stable high-dI/dt switching (up to −2790 A/µs) and minimizing dynamic VCE spikes in two-level and three-level NPC topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VCE650 V - Supports DC bus voltages up to 600 V in industrial UPS and EV charging systems.
IC150 A continuous - Rated for sustained output current in 10–30 kW inverter stages.
VCE(sat)1.4–1.65 V @ 150 A, 25 °C - Reduces conduction loss by ~15% vs. IGBT6, lowering heatsink requirements.
Eoff2.9 mJ @ 400 V, 150 A, 25 °C - Enables >20 kHz hard-switching without excessive thermal stress.
trr65 ns @ 25 °C - Limits diode reverse recovery energy (Erec = 0.89 mJ), suppressing snubber losses.
Rth(j-c)0.19 K/W (IGBT) - Allows 307 W power dissipation at Tc = 100 °C, supporting compact thermal design.
QG300 nC - Matches standard 15 V gate drivers; enables precise timing control with 10 Ω gate resistors.

Pinout & Package

Package: PG-TO247-4-PLUS (4-pin variant with separate Kelvin emitter terminal), thermally enhanced epoxy-molded housing, isolated mounting base, RoHS-compliant lead finish.

Pin/TerminalCircuit RoleDesign Meaning
Collector (C)Main high-side current sinkConnected to DC+ bus; carries full load current and fault current up to 600 A pulse.
Gate (G)Control input for IGBT channelDrives trench-gate structure; requires low-inductance connection to avoid oscillation.
Emitter (E)Main emitter return pathCarries full load current; connects to DC− or phase-leg midpoint in bridge configurations.
Emitter Kelvin (EK)Sense/reference node for gate driveProvides feedback path for gate driver IC to compensate for emitter lead inductance, stabilizing VGE during fast switching.

Key Features

FeatureDesign Value
4-pin Kelvin emitter configurationEliminates gate loop voltage drop error, enabling accurate VGE control at dI/dt > 5 kA/µs.
TRENCHSTOP™ IGBT7 die architectureReduces total switching energy (Ets) by 22% vs. IGBT6 at same VCE/IC, improving efficiency in 16–25 kHz UPS operation.
Emitter Controlled 7 (EC7) diodeDelivers soft recovery with <100 A peak reverse current (Irrm) and low dIrr/dt, reducing EMI filter burden.
Humidity robustness qualificationValidated per JEDEC JESD22-A110 per industrial reliability standards, ensuring long-term stability in humid environments.
Optimized for 2-level & 3-level NPC topologiesEnables balanced voltage sharing and reduced dv/dt stress on clamping diodes in multi-level inverter legs.

Applications

Industrial UPS InvertersEV Charging Stations

Use Scenario: 15–30 kVA online double-conversion UPS delivering clean sine-wave AC output during grid failure.

IC Role / Device Role / Timing Role: Main switching device in 3-phase inverter leg; operates at 16–20 kHz with sinusoidal PWM modulation.

Use Value: Low VCE(sat) and soft diode reduce conduction + switching losses by 18%, extending battery runtime and lowering cooling fan noise.

Use Scenario: 11–22 kW AC-to-DC OBC or DC fast-charging front-end rectifier/inverter stage.

IC Role / Device Role / Timing Role: High-side switch in Vienna rectifier or two-level inverter; handles bidirectional power flow with 25 kHz switching.

Use Value: Stable VCE(sat) across −40 to 175 °C ensures consistent efficiency during cold-start and thermal soak conditions.

String Solar InvertersIndustrial Welding Power Supplies

Use Scenario: 10–25 kW transformerless string inverter converting PV DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: Output stage switch in H-bridge or NPC topology; subjected to rapid load transients and partial shading-induced current ripple.

Use Value: Low internal emitter inductance (LE = 13 nH) minimizes voltage overshoot during turn-off, eliminating need for external RC snubbers.

Use Scenario: IGBT-based inverter in 15–30 kW arc welding equipment requiring precise current regulation and fast response.

IC Role / Device Role / Timing Role: Primary power switch in resonant or hard-switched inverter driving high-frequency transformer primary.

Use Value: Fast, soft diode recovery (trr = 65 ns) prevents parasitic turn-on of complementary IGBT during freewheeling, improving arc stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power IGBT switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N65ES5XKSA1650 V, 40 A, TO247-3L, IGBT5 + soft diode; higher VCE(sat) (1.75 V), no Kelvin emitter.Limited to ≤5 kW designs; unsuitable for high-dI/dt or multi-kW parallel operation due to lack of Kelvin sensing.Select when cost sensitivity outweighs efficiency and thermal margin requirements in lower-power systems.
IKZ150N65EH7XKSA1650 V, 150 A, TO247-4L, identical IGBT7 + EC7 die but with different marking and minor thermal resistance variation (Rth(j-c) = 0.20 K/W).Functionally interchangeable; validated in same industrial UPS reference designs as IKY150N65EH7XKSA1.Preferred for new designs where Infineon's latest revision and extended qualification history are prioritized.

Compared with IKW40N65ES5XKSA1, IKY150N65EH7XKSA1 enables 3.7× higher power density and superior gate control fidelity; versus IKZ150N65EH7XKSA1, it offers identical electrical performance with marginally better thermal resistance, making it optimal for space-constrained 20–30 kW inverter modules.

Availability

IKY150N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS inverters, EV charging stations, and string solar inverters requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IKY150N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial motor drives, UPS, and solar/welding inverters operating up to 175 °C junction temperature.

FAQ

What is the purpose of the fourth (Kelvin emitter) pin on IKY150N65EH7XKSA1?

The fourth pin is a dedicated Kelvin emitter terminal that provides a low-inductance reference path for the gate driver. It isolates gate-loop sensing from high-current emitter paths, preventing voltage drop errors across emitter bondwires during fast switching. This ensures accurate VGE control and eliminates false turn-off under high dI/dt, critical for stable operation above 20 kHz.

How does the EC7 diode differ from standard FRDs in terms of system-level benefits?

The EC7 diode features precisely controlled carrier lifetime and tailored doping to achieve soft, low-overshoot reverse recovery. Measured trr = 65 ns and Irrm = 100 A at 25 °C reduce Erec to 0.89 mJ-42% lower than typical FRDs. This directly lowers snubber losses, eases EMI filtering, and prevents cross-conduction in bridge legs, improving inverter efficiency and reliability.

Can IKY150N65EH7XKSA1 be paralleled for higher current capacity?

Yes-its positive VCE(sat) temperature coefficient (VCE(sat) increases with junction temperature) enables inherent current sharing. Combined with matched gate drive and symmetrical layout, parallel operation is validated in Infineon's 30 kW UPS reference design. Thermal resistance matching (Rth(j-c) = 0.19 K/W) and Kelvin emitter routing are mandatory for stable current division.

What JEDEC qualifications confirm its suitability for industrial environments?

IKY150N65EH7XKSA1 is qualified per JEDEC JESD22-A108 (temperature cycling), JESD22-A110 (highly accelerated stress test-humidity), and JESD22-A104 (high-temperature storage). These tests verify robustness against thermal shock, moisture ingress, and long-term bias stress-ensuring ≥10-year field life in industrial UPS and welding equipment operating at 100 °C case temperature.

IKY150N65EH7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TRENCHSTOP™
Package/Case:
TO-247-4
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
160 A
Current - Collector Pulsed (Icm):
600 A
Vce(on) (Max) @ Vge, Ic:
1.65V @ 15V, 150A
Power - Max:
621 W
Switching Energy:
2.3mJ (on), 2.9mJ (off)
Input Type:
Standard
Gate Charge:
300 nC
Td (on/off) @ 25°C:
44ns/343ns
Test Condition:
400V, 150A, 10Ohm, 15V
Reverse Recovery Time (trr):
65 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-4-2

IKY150N65EH7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKY150N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKY150N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKY150N65EH7XKSA1 is usually 5 days.

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IKY150N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKY150N65EH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKY150N65EH7XKSA1?

For technical support, including IKY150N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKY150N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKY150N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKY150N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKY150N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKY150N65EH7XKSA1?

All IKY150N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKY150N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKY150N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKY150N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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