Infineon Technologies IKY40N120CH3XKSA1

Overview

IKY40N120CH3 from Infineon is a 1200 V, 40 A high-speed IGBT co-packed with a full-current-rated emitter-controlled diode in PG-TO247-4-2 package, featuring Kelvin emitter pin for ultra-low switching losses, 10 µs short-circuit withstand time at 175 °C, and soft fast-recovery diode optimized for three-level solar string inverters and industrial UPS systems.

For engineers reviewing the IKY40N120CH3 datasheet, IKY40N120CH3 pinout, IKY40N120CH3 application, or IKY40N120CH3 equivalent, key selection criteria include V_CE(sat) = 2.35 V @ 40 A/25 °C, Q_G = 190 nC, t_SC = 10 µs, diode t_rr = 350 ns @ 25 °C, and thermal resistance R_th(j-c) = 0.3 K/W (IGBT), enabling high-efficiency hard-switching and resonant topologies.

Technical Context

This device implements Infineon's Highspeed3 IGBT technology with Kelvin emitter configuration to decouple gate drive from power current path-reducing Miller effect and improving switching controllability. Its positive V_CE(sat) temperature coefficient ensures stable parallel operation across temperature ranges.

The integrated antiparallel diode uses emitter-controlled structure for very soft recovery (t_rr = 350–550 ns, Q_rr = 3–7.5 µC), minimizing voltage overshoot and EMI in high-dV/dt applications. Both IGBT and diode share a common 175 °C maximum junction temperature rating and are qualified per JEDEC47/20/22 for industrial use.

Key Specifications

Pinout & Package

Package: PG-TO247-4-2 - 4-pin through-hole package with separate Kelvin emitter (pin 4) for precise gate control and reduced switching losses.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT with integrated diode applications.

Compared with IXGN40N120B3 and STGW40H12DF2, IKY40N120CH3 delivers the lowest combined conduction and switching loss (E_ts = 3.5 mJ @ 25 °C), highest short-circuit ruggedness (10 µs), and most EMI-optimized diode recovery-making it optimal for space-constrained, high-efficiency solar and UPS designs.

Availability

IKY40N120CH3 is available at Aetrix Electronics and suitable for three-level solar string inverters, industrial uninterruptible power supplies, and energy storage system bi-directional converters requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IKY40N120CH3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The IKY40N120CH3 belongs to Infineon's Highspeed3 IGBT product line, engineered specifically for high-efficiency, high-reliability switching in 10–50 kHz industrial power conversion systems with stringent EMI and thermal constraints.

FAQ

What is the purpose of the Kelvin emitter pin (Pin 4) on the IKY40N120CH3?

The Kelvin emitter pin provides a dedicated low-impedance return path for the gate drive loop, isolating it from main power current flow. This eliminates voltage drop across emitter bond wires during switching transients, ensuring accurate gate voltage control and reducing Miller-induced false turn-on. It is essential for stable operation at high dV/dt rates and in paralleled configurations.

Can the IKY40N120CH3 replace standard TO-247-3 IGBTs in existing designs?

No direct drop-in replacement is possible due to the fourth Kelvin emitter pin and altered pinout. Layout redesign is required to route the Kelvin emitter separately from the main emitter. Gate driver impedance and PCB trace inductance must also be re-optimized to leverage the Kelvin advantage-otherwise, no performance gain is realized and risk of oscillation increases.

How does the integrated diode differ from standard FRDs in this device?

This is an emitter-controlled diode-not a standard fast recovery diode-with tailored carrier lifetime and doping to achieve very soft reverse recovery (low I_rrm, controlled dirr/dt). Unlike FRDs, it avoids abrupt current collapse, reducing voltage spikes and EMI. Its forward voltage (1.9–2.3 V) and recovery charge (3–7.5 µC) are co-optimized with the IGBT die for balanced switching behavior.

What thermal derating guidance applies for continuous operation at 134 °C case temperature?

At T_c = 134 °C, the device supports 40 A continuous collector current with junction temperature limited to 175 °C. Derating is linear between T_c = 25 °C (80 A) and T_c = 134 °C (40 A). Thermal interface material quality and heatsink baseplate flatness critically affect R_th(j-c) performance-Infineon specifies 0.3 K/W only with <0.1 mm thermal pad compression and <0.5 µm surface roughness.