Infineon Technologies IKY50N120CH7XKSA1

Overview

IKY50N120CH7XKSA1 from Infineon is a high-speed 1200 V TRENCHSTOP™ IGBT 7 co-packed with a full-rated 50 A ultra-fast recovery emitter-controlled diode in a PG-TO247-4-PLUS package. It delivers V_CE(sat) = 1.7 V at 25°C, t_fall = 42 ns, and Q_rr = 1.71 µC, enabling efficient hard-switching in industrial UPS and EV-charging inverters.

For engineers reviewing the IKY50N120CH7XKSA1 datasheet, IKY50N120CH7XKSA1 pinout, IKY50N120CH7XKSA1 application, or IKY50N120CH7XKSA1 equivalent, key selection criteria include its 175°C max junction temperature, positive V_CE(sat) temperature coefficient for stable paralleling, and integrated diode's soft commutation for reduced EMI in 3-level NPC/T-type topologies.

Technical Context

This device implements Infineon's 7th-generation TRENCHSTOP™ IGBT cell architecture with optimized carrier lifetime control and field-stop design to achieve low conduction loss and fast switching simultaneously. Its co-packaged 7 Rapid diode features tailored carrier lifetime and emitter control to minimize Q_rr and ensure soft reverse recovery.

The 4-pin TO247-4-PLUS package separates the Kelvin emitter (E_K) from the power emitter (E), enabling gate drive loop decoupling and precise V_CE(sat)-based overcurrent protection. Thermal resistance R_th(j-c) is 0.29 K/W for the IGBT and 0.51 K/W for the diode, supporting high-power density designs up to 175°C junction operation.

Key Specifications

Pinout & Package

Package: PG-TO247-4-PLUS (4-pin variant with Kelvin emitter), RoHS-compliant, Pb-free lead plating. Outline per Infineon document 02_00151.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode module applications.

Compared with IKW50N120H7 and FF50R12ME4, IKY50N120CH7XKSA1 uniquely combines Kelvin-emitter accuracy, ultra-low Q_rr, and industry-leading 0.29 K/W IGBT thermal resistance-making it optimal for high-efficiency, high-reliability single-device inverter stages where layout compactness and real-time fault detection are critical.

Availability

IKY50N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging infrastructure, and string inverter designs requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IKY50N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-frequency hard-switching applications in renewable energy, e-mobility, and industrial power conversion where low loss, soft switching, and thermal robustness are mandatory.

FAQ

What is the purpose of the Kelvin emitter (E_K) pin on IKY50N120CH7XKSA1?

The Kelvin emitter pin provides a dedicated low-inductance path for gate driver feedback, isolating the sensing loop from high-current power return paths. This enables accurate V_CE(sat) measurement during turn-on for reliable short-circuit protection without false triggering caused by emitter inductance voltage drop.

How does the 7 Rapid diode differ from standard FRDs in this co-packaged device?

The 7 Rapid diode uses emitter-controlled carrier lifetime tailoring and optimized doping profiles to achieve Q_rr = 1.71 µC and soft recovery (low dirr/dt), reducing voltage overshoot and EMI. Unlike standard FRDs, it maintains low forward voltage (V_F = 2.5 V) while minimizing reverse recovery energy (E_rec = 0.64 mJ) at 25°C.

Can IKY50N120CH7XKSA1 be paralleled reliably in high-current designs?

Yes-its positive temperature coefficient of V_CE(sat) ensures inherent current balancing across paralleled units. At 175°C, V_CE(sat) rises to 2.0 V, increasing conduction loss in hotter devices and naturally redistributing current. No external emitter resistors are required for stable operation up to 200 A total current.

What thermal interface material and heatsink requirements apply for 100% continuous 50 A operation?

At T_c = 100°C, the IGBT dissipates 199 W. With R_th(j-c) = 0.29 K/W, junction temperature reaches 175°C only if case-to-heatsink thermal resistance (including TIM) is ≤ 0.25 K/W. A 0.1 mm thick, 1.5 W/m·K thermal pad or phase-change material paired with a finned aluminum heatsink (≥ 400 cm² surface area, 2 m/s airflow) meets this requirement.