Infineon Technologies IKY75N120CH3XKSA1

Overview

IKY75N120CH3XKSA1 from Infineon is a 1200 V, 75 A third-generation high-speed IGBT in PG-TO247-4-2 package with Kelvin emitter configuration, co-packed with a soft, fast-recovery anti-parallel diode. It delivers 2.0 V V_CE(sat) at T_vj = 25°C, 10 µs short-circuit withstand time at 175°C, and 370 nC total gate charge-enabling high-efficiency hard-switching and resonant topologies in industrial UPS and solar string inverters.

For engineers reviewing the IKY75N120CH3XKSA1 datasheet, IKY75N120CH3XKSA1 pinout, IKY75N120CH3XKSA1 application, or IKY75N120CH3XKSA1 equivalent, key selection criteria include its Kelvin-emitter–enabled low switching losses, positive V_CE(sat) temperature coefficient for stable paralleling, and integrated full-current-rated diode with 292 ns trr at 25°C.

Technical Context

This IGBT employs Infineon's Highspeed3 (H3) technology with a dedicated Kelvin emitter terminal to decouple gate drive from power current path-reducing Miller-induced turn-off delay and enabling precise gate control under high di/dt. Its internal emitter inductance is specified at 13.0 nH, and it supports gate drive voltages up to ±30 V transient.

The co-packaged Emitter Controlled diode features soft reverse recovery (Q_rr = 4.90 µC, I_rrm = 41.0 A at 25°C), minimizing voltage overshoot and EMI. Thermal design is supported by R_th(j-c) = 0.16 K/W (IGBT) and 0.28 K/W (diode), enabling high-power density layouts in constrained thermal environments.

Key Specifications

Pinout & Package

PG-TO247-4-2 package with 4 terminals: main collector (C), main emitter (E), gate (G), and Kelvin emitter (K). The Kelvin emitter pin isolates gate loop inductance from power current path, eliminating dynamic V_CE feedback during switching transitions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Compared with IXGN75N120B3 and STGW75H12DF, IKY75N120CH3XKSA1 uniquely combines Kelvin emitter architecture, 10 µs short-circuit rating, and lowest Q_G in its class-making it optimal for high-frequency, high-reliability industrial inverters where gate drive fidelity and fault robustness are critical.

Availability

IKY75N120CH3XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV charger, and three-level solar string inverter designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for IKY75N120CH3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The Highspeed3 IGBT product line targets high-efficiency, high-frequency power conversion systems-including solar inverters, UPS, and industrial motor drives-where low switching loss, thermal robustness, and integration of optimized diodes are essential.

FAQ

What is the purpose of the Kelvin emitter pin in IKY75N120CH3XKSA1?

The Kelvin emitter pin provides a dedicated low-current reference path for the gate driver, isolating gate loop inductance from the high-current main emitter path. This eliminates dynamic voltage drop interference during switching, stabilizes gate control under high di/dt, and prevents spurious turn-on caused by Miller coupling-critical for reliable operation above 50 kHz.

Can IKY75N120CH3XKSA1 replace older H2-series IGBTs without layout changes?

No-IKY75N120CH3XKSA1 uses PG-TO247-4-2 with four pins, whereas legacy H2 devices like IKW75N120H2 use PG-TO247-3. The fourth Kelvin emitter pin requires updated PCB footprint and separate gate driver routing. Direct replacement would cause gate instability and potential shoot-through due to missing Kelvin connection.

What gate resistor value is recommended for 175°C operation?

Infineon specifies RG(on) = RG(off) = 6.0 Ω for characterization at Tvj = 175°C. This value balances switching speed (td(off) ≈ 400 ns) and gate oscillation suppression. For higher reliability in noisy environments, 8–10 Ω may be used-but increases Eoff by ~15%, requiring thermal recalculations per application conditions.

Is the anti-parallel diode fully rated for 75 A continuous current?

Yes-the integrated Emitter Controlled diode is rated for IF = 75 A continuous at Tc = 100°C, matching the IGBT's current rating. Its soft recovery (trr = 292 ns, Qrr = 4.90 µC at 25°C) and low forward voltage (VF = 1.90 V) ensure symmetrical conduction capability without derating, enabling true bidirectional switching in half-bridge configurations.