Infineon Technologies IKY75N120CH7XKSA1

Overview

IKY75N120CH7XKSA1 from Infineon is a 1200 V, 75 A high-speed TRENCHSTOP™ IGBT 7 co-packed with a full-rated 75 A ultra-fast soft-commutating Rapid diode in a PG-TO247-4-PLUS package. It delivers V_CE(sat) = 1.7 V at 25°C, t_rr = 90 ns, and Q_rr = 2.55 µC, enabling high-efficiency hard-switching in 2-level inverters and 3-level NPC/T-type topologies for industrial UPS and EV-charging systems.

For engineers reviewing the IKY75N120CH7XKSA1 datasheet, IKY75N120CH7XKSA1 pinout, IKY75N120CH7XKSA1 application, or IKY75N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, low switching losses (E_on = 1.81 mJ, E_off = 2.02 mJ at 25°C), and integrated diode with soft recovery and <170 ns trr at 175°C.

Technical Context

This device implements Infineon's 7th-generation TRENCHSTOP IGBT cell architecture with field-stop design and optimized carrier lifetime control to achieve simultaneous low conduction loss and fast switching. Its co-packaged 7 Rapid diode features emitter-controlled doping and tailored minority-carrier lifetime for ultra-low Q_rr and soft reverse recovery.

The 4-pin TO247-4-PLUS package separates the Kelvin emitter (pin 4) from the power emitter (pin 2), enabling gate drive loop decoupling and precise V_CE sensing-critical for minimizing dynamic losses and improving short-circuit robustness in high-frequency inverter stages.

Key Specifications

Pinout & Package

Package: PG-TO247-4-PLUS (4-pin variant with Kelvin emitter), RoHS-compliant, Pb-free lead plating. Dimensions per Infineon outline NN5.1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode module applications.

Compared with IKW75N120H7 and FF75R12RT4, IKY75N120CH7XKSA1 uniquely combines Kelvin-emitter precision, lowest Q_rr, and highest thermal efficiency-making it optimal for high-frequency, high-reliability industrial inverters where gate drive fidelity and diode softness are non-negotiable.

Availability

IKY75N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, EV-charging infrastructure, photovoltaic string inverters, and industrial welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IKY75N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching inverters in industrial and renewable energy applications demanding 1200 V blocking capability and sub-100 ns diode recovery.

FAQ

What is the purpose of the 4th pin (Kelvin emitter) on IKY75N120CH7XKSA1?

The 4th pin is a dedicated Kelvin emitter connection that provides a low-inductance, noise-immune reference for the gate driver. It eliminates voltage drop errors caused by power emitter inductance (13 nH) during high-di/dt switching, ensuring accurate V_GE control and stable turn-on behavior-critical for minimizing dynamic losses and avoiding false turn-off.

How does the 7 Rapid diode differ from standard FRDs in this device?

The co-packed 7 Rapid diode uses emitter-controlled doping and optimized carrier lifetime to achieve ultra-low Q_rr (2.55 µC), soft reverse recovery (I_rrm = 84 A, dirr/dt = −3200 A/µs), and fast t_rr (90 ns). Unlike standard FRDs, it avoids abrupt current collapse, reducing voltage overshoot, EMI, and snubber stress in high-frequency hard-switching topologies.

Can IKY75N120CH7XKSA1 be paralleled reliably without external gate resistors?

Yes-its positive temperature coefficient of V_CE(sat) ensures inherent current balancing across parallel devices. At 175°C, V_CE(sat) rises to 2.0 V (vs. 1.7 V at 25°C), causing hotter devices to self-limit current. This enables stable paralleling with matched gate drive and layout, eliminating need for individual gate resistors in most industrial inverter designs.

What is the maximum recommended gate resistor value for 20 kHz switching?

For 20 kHz hard switching with 75 A load, Infineon recommends R_G(on) = 5.3 Ω and R_G(off) = 5.3 Ω (per datasheet test conditions). Increasing R_G beyond 10 Ω significantly extends td(off) (to >500 ns at 175°C) and increases E_off - degrading efficiency. Use active Miller clamp and low-inductance gate loops to maintain timing integrity.