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Infineon Technologies IKY75N120CS6XKSA1
- Part No.:
- IKY75N120CS6XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- TO-247-4
- Datasheet:
-
IKY75N120CS6XKSA1.pdf
- Description:
- IGBT TRENCH FS 1200V 150A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:116
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Product details
Overview
IKY75N120CS6XKSA1 from Infineon is a 1200 V, 75 A TRENCHSTOP™ IGBT6 with integrated soft-recovery anti-parallel diode in PG-TO247-4-2 package. It delivers high-efficiency hard-switching and resonant operation, features low gate charge (530 nC), 1.85 V VCE(sat) at 25°C, and supports 175°C junction temperature-enabling compact, high-power industrial UPS and solar string inverters.
For engineers reviewing the IKY75N120CS6XKSA1 datasheet, IKY75N120CS6XKSA1 pinout, IKY75N120CS6XKSA1 application, or IKY75N120CS6XKSA1 equivalent, key selection criteria include its 300 A pulsed collector current rating, 205 ns diode reverse recovery time at 25°C, positive VCE(sat) temperature coefficient for stable paralleling, and co-packaged diode with 76 A peak reverse recovery current.
Technical Context
This IGBT employs sixth-generation Trench and Fieldstop technology optimized for high-speed soft switching. Its architecture enables low EMI through controlled turn-off tail current and reduced voltage overshoot, while the integrated diode exhibits very soft reverse recovery with <10.6 µC Qrr at 175°C.
The device operates across –40°C to +175°C junction range and uses a 4-pin TO247 package with Kelvin emitter configuration-separating power and signal emitter paths to minimize gate loop inductance and improve switching controllability under high di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE | 1200 V - Supports DC bus voltages up to 1000 V in three-level solar inverters and industrial UPS systems. |
| IC | 75 A continuous - Rated for sustained conduction at Tc = 100°C, enabling high-power density converter designs. |
| VCE(sat) | 1.85 V at 25°C - Low conduction loss reduces thermal stress and improves system efficiency at rated load. |
| QG | 530 nC - Enables fast, low-loss switching with moderate gate drive strength (e.g., 4 Ω RG). |
| tr/tf | 32 ns / 31 ns at 25°C - Short switching transitions reduce overlap losses in hard-switched topologies. |
| trr / Qrr | 205 ns / 4.7 µC at 25°C - Soft, fast diode recovery minimizes voltage spikes and EMI during commutation. |
| Rth(j-c) | 0.17 K/W (IGBT) - Enables direct heatsink mounting with predictable thermal resistance for thermal design. |
Pinout & Package
Package: PG-TO247-4-2 - 4-pin variant with separate Kelvin emitter (pin 4) for precise gate control and reduced Miller effect.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Collector) | Main power output terminal | Connects to high-side DC bus node; carries full load current and switching transients. |
| 2 (Gate) | Control input | Drives IGBT channel; requires low-inductance path to gate driver due to 530 nC QG. |
| 3 (Emitter) | Power return path | Carries full load current; connects to main power ground plane or low-side switch node. |
| 4 (Kelvin Emitter) | Sense/reference for gate drive | Provides dedicated low-noise emitter reference to gate driver IC, decoupling gate loop from power loop. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed soft switching | Optimized IGBT/diode pairing achieves <300 ns td(off) and <340 ns trr at 175°C, reducing switching loss and EMI in resonant converters. |
| Positive VCE(sat) tempco | Enables stable current sharing in parallel configurations without external current-balancing resistors or active control. |
| Integrated anti-parallel diode | Co-packaged soft-recovery diode eliminates discrete diode layout complexity and parasitic inductance in half-bridge legs. |
| 175°C maximum junction temperature | Supports higher ambient operating temperatures and tighter thermal margins in enclosed industrial enclosures. |
| Pb-free RoHS-compliant plating | Meets global environmental compliance requirements for industrial and energy infrastructure applications. |
Applications
| Industrial UPS | Three-Level Solar String Inverter |
|---|---|
|
Use Scenario: Bidirectional DC/AC conversion in online double-conversion UPS systems handling 10–50 kVA loads. IC Role / Device Role: High-side IGBT in three-phase inverter leg, switching at 8–16 kHz with sinusoidal PWM. Use Value: Low 1.85 V VCE(sat) and 530 nC QG reduce conduction and switching losses, improving system efficiency above 96%. |
Use Scenario: Active neutral-point clamping (ANPC) topology in 1500 V DC-input solar inverters. IC Role / Device Role: Upper-leg IGBT in NPC sub-module, managing 600–900 V blocking and 75 A RMS current. Use Value: 1200 V rating and soft diode recovery enable reliable clamping function and reduce snubber requirements. |
| Energy Storage System (ESS) Bi-Directional Converter | Industrial Battery Charger |
|
Use Scenario: Grid-tied DC/DC stage converting between 800 V battery stack and 1500 V DC link in megawatt-scale ESS. IC Role / Device Role: Primary switching device in dual-active-bridge (DAB) isolated DC/DC converter primary side. Use Value: 300 A pulsed current rating and 0.17 K/W Rth(j-c) support high peak power transfer during transient load steps. |
Use Scenario: High-current AC/DC rectification and charging control for 400–800 V lithium-ion battery banks. IC Role / Device Role: Switching element in phase-shifted full-bridge topology operating at 50–100 kHz. Use Value: Very soft diode recovery (205 ns trr, 4.7 µC Qrr) prevents voltage overshoot during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXYN75N120C3 | 1200 V, 75 A; higher VCE(sat) (2.2 V), no Kelvin emitter, TO-247-3 package | Lacks separate emitter sense pin; requires external gate resistor tuning for paralleling stability | Lower cost where Kelvin control is not required and thermal margin allows higher conduction loss. |
| STMicroelectronics STGY75H120DF2 | 1200 V, 75 A; integrated diode with slower trr (320 ns), same 4-pin TO247 package | Higher diode recovery charge (7.2 µC) increases switching loss in high-frequency ZVS designs | Better suited for lower-frequency (<10 kHz) industrial motor drives than high-efficiency solar inverters. |
Compared with IXYN75N120C3 and STGY75H120DF2, IKY75N120CS6XKSA1 provides superior switching efficiency via lower QG and softer diode recovery, while its Kelvin emitter enables more robust gate control in high-di/dt multi-kW systems.
Availability
IKY75N120CS6XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, three-level solar string inverters, and energy storage bi-directional converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IKY75N120CS6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
The TRENCHSTOP™ IGBT6 series targets high-efficiency, high-reliability power conversion in renewable energy, uninterruptible power, and industrial motor control-emphasizing soft switching, thermal robustness, and system-level EMI reduction.
FAQ
What is the purpose of the Kelvin emitter pin (Pin 4) on IKY75N120CS6XKSA1?
The Kelvin emitter pin provides a dedicated low-inductance reference path for the gate driver, isolating the gate control loop from high di/dt power current flow. This reduces Miller-induced false turn-on risk and improves switching consistency, especially in parallel configurations or high-frequency hard-switched converters where gate loop inductance critically affects timing accuracy.
Can IKY75N120CS6XKSA1 replace older IGBTs like IKW75N60T in existing designs?
No-IKY75N120CS6XKSA1 has a 1200 V rating and TO247-4 package, whereas IKW75N60T is a 600 V, TO247-3 device. Voltage, package pinout, and internal Kelvin structure differ fundamentally. Direct replacement would require PCB redesign, gate drive revalidation, and thermal reassessment due to different VCE(sat), QG, and thermal resistance values.
How does the integrated diode's reverse recovery performance impact system-level EMI?
The diode's soft recovery (205 ns trr, 4.7 µC Qrr at 25°C) limits di/dt during turn-off, suppressing high-frequency ringing caused by stray inductance. This directly reduces conducted and radiated EMI in the 30–300 MHz band, easing compliance with EN 55011 Class A and reducing need for ferrite beads or RC snubbers in inverter leg layouts.
Is IKY75N120CS6XKSA1 qualified for automotive applications?
No-it is qualified per JEDEC47/20/22 for industrial applications only. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond –40°C to +175°C. For automotive traction or onboard charger use, Infineon's Automotive IGBT portfolio (e.g., AIK75N120CT6) must be selected instead.
IKY75N120CS6XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- TrenchStop™
- Package/Case:
- TO-247-4
- Packaging:
- Tube
- Product Status:
- Active
- IGBT Type:
- Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 150 A
- Current - Collector Pulsed (Icm):
- 300 A
- Vce(on) (Max) @ Vge, Ic:
- 2.15V @ 15V, 75A
- Power - Max:
- 880 W
- Switching Energy:
- 2.2mJ (on), 2.95mJ (off)
- Input Type:
- Standard
- Gate Charge:
- 530 nC
- Td (on/off) @ 25°C:
- 32ns/300ns
- Test Condition:
- 600V, 75A, 4Ohm, 15V
- Reverse Recovery Time (trr):
- 205 ns
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-4-2
IKY75N120CS6XKSA1 FAQ
1.How can I place an order for IKY75N120CS6XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IKY75N120CS6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IKY75N120CS6XKSA1 reliable?
The price and inventory of IKY75N120CS6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKY75N120CS6XKSA1 is usually 5 days.
3.What payment methods are accepted for IKY75N120CS6XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKY75N120CS6XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IKY75N120CS6XKSA1?
IKY75N120CS6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IKY75N120CS6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IKY75N120CS6XKSA1?
For technical support, including IKY75N120CS6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKY75N120CS6XKSA1 requirements.
6.How does Aetrix verify that IKY75N120CS6XKSA1 is sourced from the original manufacturer or authorized distributors?
All IKY75N120CS6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKY75N120CS6XKSA1 meets industry standards.
7.What is the process for return or replacement of IKY75N120CS6XKSA1?
All IKY75N120CS6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKY75N120CS6XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IKY75N120CS6XKSA1 part is unused and in its original packaging.
Return procedure for IKY75N120CS6XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IKY75N120CS6XKSA1 Tags
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