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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZ50N65ES5XKSA1

Name: IKZ50N65ES5XKSA1
Brand: Infineon Technologies
SKU: IKZ50N65ES5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKZ50N65ES5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZ50N65ES5XKSA1.pdf

Description:: IGBT TRENCH 650V 80A TO247-4

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Product details

Overview

IKZ50N65ES5XKSA1 from Infineon is a 650 V, 50 A TRENCHSTOP™ 5 high-speed soft-switching IGBT with integrated full-current-rated RAPID 1 antiparallel diode in PG-TO247-4 package. It delivers 1.35 V V_CE(sat) at 25°C and 50 A, supports 175°C maximum junction temperature, and features Kelvin emitter for precise gate control-used in industrial UPS inverters requiring low conduction loss and fast, soft switching.

For engineers reviewing the IKZ50N65ES5XKSA1 datasheet, IKZ50N65ES5XKSA1 pinout, IKZ50N65ES5XKSA1 application, or IKZ50N65ES5XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, diode Q_rr and t_rr performance at 25/150°C, gate charge (120 nC), and Kelvin emitter implementation for gate loop inductance reduction.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure optimized for hard and soft-switching topologies. Its low Q_G (120 nC) and low C_res (12 pF) enable fast, controllable turn-on/turn-off with minimal E_on/E_off trade-off-0.77 mJ/0.88 mJ at 50 A, 400 V, 25°C.

The co-packed RAPID 1 diode provides soft reverse recovery (t_rr = 62 ns, Q_rr = 1.40 µC at 50 A, 25°C) and high di/dt tolerance (–1100 A/µs), reducing voltage overshoot and EMI in bridge-leg configurations where synchronous commutation occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - withstands DC bus voltages up to 650 V in industrial SMPS and UPS designs
I_C	50 A continuous - rated collector current at T_C = 25°C; derates to 60.5 A at T_C = 100°C
V_CE(sat)	1.35 V @ 50 A, 25°C - enables <1.5 W conduction loss per device at nominal load
Q_G	120 nC - determines gate drive power and influences switching speed under fixed R_G
t_rr (diode)	62 ns @ 50 A, 25°C - ensures low reverse recovery energy and reduced shoot-through risk in half-bridge operation
T_vj(max)	175°C - allows higher thermal margin and extended lifetime in forced-air-cooled industrial enclosures
R_th(j–C)	0.55 K/W - enables 274 W power dissipation at T_C = 25°C, critical for thermal design of compact heatsinks

Pinout & Package

PG-TO247-4 package with isolated collector tab (backside), four leads: Collector (C), Emitter (E), Kelvin Emitter (K), and Gate (G). The Kelvin emitter provides separate low-inductance sensing path for gate control, decoupling power and signal loops.

Pin/Terminal	Circuit Role	Design Meaning
C / Backside	Collector	Main high-side power terminal; backside metal pad serves as primary heat sink interface and current return path
E	Power Emitter	Carries full load current to low-side circuit; connects to main emitter rail and heatsink ground
K	Kelvin Emitter	Provides gate driver feedback reference point-must be routed separately from E to avoid voltage drop interference
G	Gate	Controls IGBT channel; requires low-inductance gate loop and stable ±20 V drive capability

Key Features

Feature	Design Value
Soft-switching optimized IGBT	Low tail current and controlled dV/dt reduce snubber losses and EMI in resonant and phase-shifted topologies
RAPID 1 antiparallel diode	Full-rated 80 A diode with soft recovery (Q_rr = 1.40 µC) minimizes commutation stress on complementary switch
Kelvin emitter configuration	Separates gate reference from power return, enabling accurate V_GE control and improved short-circuit ruggedness
JEDEC-qualified reliability	Validated per JEDEC JESD22-A108 for industrial UPS and welding applications with 175°C operation
Pb-free & RoHS compliant	Meets EU RoHS Directive 2011/65/EU; lead plating free for environmentally compliant manufacturing

Applications

Industrial UPS Inverter

High-Frequency SMPS

Use Scenario: Three-phase 400 V AC output in-line UPS systems with bidirectional power flow and battery backup.

IC Role / Device Role / Timing Role: High-side IGBT in six-pack inverter stage; switches at 16–20 kHz with soft commutation during zero-voltage transitions.

Use Value: Low V_CE(sat) reduces conduction loss by ~12% vs. prior-gen IGBTs; Kelvin emitter improves gate control fidelity under high di/dt load transients.

Use Scenario: 10–25 kW telecom rectifier with LLC resonant converter front-end and active PFC stage.

IC Role / Device Role / Timing Role: Primary-side switching device in asymmetric half-bridge PFC; operates in discontinuous conduction mode with 50–100 kHz switching.

Use Value: Fast t_rr and low Q_rr of co-packed diode suppress reverse recovery spikes, enabling reliable operation without external snubbers.

Energy Storage System (ESS) Bi-Directional Converter

IGBT-Based Welding Inverter

Use Scenario: 500 V DC bus bi-directional DC/AC converter for grid-tied battery storage with reactive power support.

IC Role / Device Role / Timing Role: IGBT module building block in 3L-NPC topology; handles both charging (rectification) and discharging (inversion) modes.

Use Value: 175°C T_vj(max) and robust SOA allow sustained 150% overload for 10 s during fault ride-through events.

Use Scenario: 30–50 kHz arc welding inverter with digital current regulation and short-circuit protection.

IC Role / Device Role / Timing Role: Main switching element in full-bridge inverter driving step-down transformer; subjected to repetitive short-circuit pulses.

Use Value: Low internal emitter inductance (13 nH) and high short-circuit withstand time (>3 µs @ 150°C) ensure stable current limiting during arc ignition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed soft-switching IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N65ES5	Same die, PG-TO247-3 package; no Kelvin emitter terminal	Lacks dedicated Kelvin emitter-requires careful PCB layout to minimize gate loop inductance	Select when cost sensitivity outweighs need for precision gate control in lower-power (<30 kW) designs
FGH50T65SQD	650 V, 50 A; uses Field Stop IV process; Q_G = 135 nC; no Kelvin emitter; RAPID diode with t_rr = 75 ns	Higher Q_G and slower diode recovery increase switching loss in high-frequency soft-switching	Preferable only if legacy gate driver compatibility with higher Q_G is required and thermal margin permits

Compared with IKW50N65ES5 and FGH50T65SQD, IKZ50N65ES5XKSA1 uniquely combines Kelvin emitter architecture, lowest V_CE(sat) (1.35 V), and fastest diode recovery (62 ns), making it optimal for high-efficiency, high-reliability industrial inverters where gate control fidelity and commutation softness are critical.

Availability

IKZ50N65ES5XKSA1 is available at Aetrix Electronics and suitable for industrial UPS inverters, high-frequency SMPS, energy storage system converters, and IGBT-based welding inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IKZ50N65ES5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 product line targets high-efficiency power conversion in industrial motor drives, UPS, and renewable energy inverters-designed specifically for soft-switching topologies demanding low conduction loss, fast switching, and robust diode integration.

FAQ

What is the purpose of the Kelvin emitter (pin K) in IKZ50N65ES5XKSA1?

The Kelvin emitter provides a dedicated low-inductance reference path for the gate driver, isolating the gate control loop from high di/dt power emitter current. This prevents voltage drop-induced gate underdrive during fast switching, improving turn-on consistency and short-circuit ruggedness-critical in high-power bridge-leg configurations.

How does the RAPID 1 diode differ from standard fast recovery diodes in this IGBT?

The RAPID 1 diode is co-packaged and fully rated at 80 A, with soft reverse recovery (t_rr = 62 ns, Q_rr = 1.40 µC at 50 A, 25°C) and high di/dt tolerance (–1100 A/µs). Unlike discrete diodes, its parameters are tightly matched to the IGBT die, ensuring predictable commutation behavior and eliminating mismatch-related voltage spikes in half-bridge operation.

Can IKZ50N65ES5XKSA1 replace IKW50N65ES5 in an existing design?

Yes-but only with PCB layout revision. IKZ50N65ES5XKSA1 adds a Kelvin emitter pin (K), requiring separate routing from the power emitter (E). Direct socket replacement is not possible; the gate driver must connect to K instead of E, and the power E must carry full load current without referencing gate control. Layout changes are mandatory to realize the performance benefit.

What thermal derating applies above 100°C case temperature?

At T_C = 100°C, continuous collector current drops to 60.5 A (from 80 A at 25°C), and total power dissipation falls to 137 W (from 274 W). Thermal resistance R_th(j–C) remains 0.55 K/W, so junction temperature rise is linear: ΔT_vj = P_tot × 0.55. Operation beyond 175°C junction is prohibited per datasheet absolute maximum ratings.

IKZ50N65ES5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-4

Packaging:: Bulk

Product Status:: Active

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 1.7V @ 15V, 50A

Power - Max:: 274 W

Switching Energy:: 770µJ (on), 880µJ (off)

Input Type:: Standard

Gate Charge:: 120 nC

Td (on/off) @ 25°C:: 36ns/294ns

Test Condition:: 400V, 25A, 23.1Ohm, 15V

Reverse Recovery Time (trr):: 62 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IKZ50N65ES5XKSA1 FAQ

1.How can I place an order for IKZ50N65ES5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZ50N65ES5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZ50N65ES5XKSA1 reliable?

The price and inventory of IKZ50N65ES5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZ50N65ES5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZ50N65ES5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZ50N65ES5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZ50N65ES5XKSA1?

IKZ50N65ES5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZ50N65ES5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZ50N65ES5XKSA1?

For technical support, including IKZ50N65ES5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZ50N65ES5XKSA1 requirements.

6.How does Aetrix verify that IKZ50N65ES5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZ50N65ES5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZ50N65ES5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZ50N65ES5XKSA1?

All IKZ50N65ES5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZ50N65ES5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZ50N65ES5XKSA1 part is unused and in its original packaging.

Return procedure for IKZ50N65ES5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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