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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZ50N65NH5XKSA1

Name: IKZ50N65NH5XKSA1
Brand: Infineon Technologies
SKU: IKZ50N65NH5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKZ50N65NH5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZ50N65NH5XKSA1.pdf

Description:: IGBT 650V 50A CO-PACK TO-247-4

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Product details

Overview

IKZ50N65NH5XKSA1 from Infineon is a 650V, 50A high-speed TRENCHSTOP™ 5 IGBT copacked with RAPID 2 antiparallel diode in PG-TO247-4 package, featuring Kelvin emitter pin, 1.65V V_CE(sat) at 25°C, 109 nC gate charge, and 175°C max junction temperature. It enables ultra-low-loss switching in hard-switching and resonant topologies for industrial power converters.

For engineers reviewing the IKZ50N65NH5XKSA1 datasheet, IKZ50N65NH5XKSA1 pinout, IKZ50N65NH5XKSA1 application, or IKZ50N65NH5XKSA1 equivalent, key selection criteria include its Kelvin-emitter–enabled gate control, 46 ns diode trr at 25°C, 0.55 K/W IGBT thermal resistance, and compatibility with 200 A pulsed collector current in UPS and solar inverter designs.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure with integrated Kelvin emitter terminal to minimize Miller effect and enable precise gate drive control. Its RAPID 2 diode delivers soft reverse recovery (46 ns trr, 0.49 µC Qrr at 25°C) and low Irrm (22 A), reducing voltage overshoot and EMI in bidirectional energy transfer.

The device operates across –40°C to +175°C junction range with JEDEC-qualified reliability and RoHS-compliant Pb-free plating. Its 0.55 K/W R_th(j–c) and 13 nH internal emitter inductance support high-frequency switching up to 100 kHz in mid-to-high-frequency converters without external emitter sensing compensation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in solar inverters and UPS systems.
I_C	50 A continuous - Rated for 50 A collector current at T_C = 25°C, derating to 54 A at T_C = 100°C.
V_CE(sat)	1.65 V at 25°C - Low conduction loss enabling >98% efficiency in 10–50 kHz hard-switching PFC stages.
Q_G	109 nC - Enables fast, low-loss turn-on with standard 15 Ω gate resistors and 15 V drive.
t_r/t_f	8 ns / 23 ns - Supports <100 ns total switching transitions for reduced switching loss at 50 kHz.
trr (diode)	46 ns at 25°C - Soft, low-overshoot recovery minimizes snubber stress and dv/dt-induced shoot-through risk.
R_th(j–c)	0.55 K/W - Allows direct heatsink mounting with ≤110 W dissipation at ΔT = 60 K under forced air cooling.

Pinout & Package

PG-TO247-4 package with isolated collector tab (backside), four leads: C (collector), E (emitter), K (Kelvin emitter), G (gate). Emitter and Kelvin emitter pins are functionally distinct and non-interchangeable - misrouting causes gate control instability.

Pin/Terminal	Circuit Role	Design Meaning
C & backside	Collector	Main high-side power path; backside metal serves as primary thermal interface and high-current return.
E	Power emitter	Carries full load current to ground or low-side switch; connects to main PCB power plane.
K	Kelvin emitter	Provides dedicated low-inductance sense path for gate driver feedback-bypasses power loop inductance.
G	Gate	Controls IGBT channel; requires stable 15 V ±10% drive referenced to Kelvin emitter for optimal switching.

Key Features

Feature	Design Value
Kelvin emitter configuration	Eliminates power loop inductance impact on gate control, enabling stable 100+ kHz operation without external gate sensing.
TRENCHSTOP™ 5 technology	Reduces switching losses by 25% vs. TRENCHSTOP™ 4 while maintaining same 650 V blocking capability.
RAPID 2 antiparallel diode	Delivers 46 ns trr and 22 A peak reverse recovery current-optimized for zero-voltage switching (ZVS) in phase-shifted full-bridge topologies.
JEDEC qualification	Validated for industrial power applications per JESD47 stress testing, supporting 15+ year field life in solar and UPS deployments.

Applications

Solar String Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: DC–AC conversion stage in 3–10 kW string inverters operating at 16–50 kHz with transformerless topology.

IC Role / Device Role / Timing Role: High-side IGBT switch in H-bridge output stage; RAPID 2 diode handles freewheeling during dead-time.

Use Value: 1.65 V V_CE(sat) and 46 ns diode trr reduce conduction + recovery losses by 18% vs. prior-gen devices, improving system efficiency from 97.2% to 97.8%.

Use Scenario: Online double-conversion UPS with 6–10 kVA rating, requiring high reliability and low THD under nonlinear loads.

IC Role / Device Role / Timing Role: Inverter leg switch in three-phase IGBT bridge; Kelvin emitter ensures consistent gate timing across load transients.

Use Value: 175°C T_vj(max) and 0.55 K/W R_th(j–c) allow sustained 100% load operation at 40°C ambient without derating-meeting UL 1778 thermal compliance.

Welding Converters

Mid-Frequency Induction Heaters

Use Scenario: Inverter-based arc welding power supplies operating at 20–100 kHz with high di/dt demands (>500 A/µs).

IC Role / Device Role / Timing Role: Primary switching element in resonant LLC or phase-shifted ZVS topology; RAPID 2 diode absorbs reverse recovery energy.

Use Value: 22 A Irrm and –4330 A/µs dirr/dt rating prevent diode snap-off failure during rapid current reversal, extending mean time between failures (MTBF) by 3×.

Use Scenario: 20–80 kHz induction heating inverters for industrial metal processing with tight thermal constraints.

IC Role / Device Role / Timing Role: Half-bridge switch handling 50–100 A RMS current; Kelvin emitter enables accurate gate voltage regulation despite PCB trace inductance.

Use Value: 13 nH internal emitter inductance-measured 5 mm from case-is fully compensated by Kelvin connection, eliminating gate oscillation and false turn-on events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N65ES5	Same 650 V/50 A rating but uses TRENCHSTOP™ IGBT + RAPID 1 diode; higher V_CE(sat) (1.75 V), no Kelvin emitter.	Lacks Kelvin emitter-requires external emitter sensing for high-frequency stability; lower efficiency in >30 kHz designs.	Select when cost sensitivity outweighs switching performance; not recommended for new 50+ kHz designs.
FGH50T65SQD	ON Semiconductor 650 V/50 A IGBT with soft-recovery diode; 1.85 V V_CE(sat), 125 nC Q_G, no Kelvin emitter.	Higher gate charge increases driver loss; lacks Kelvin pin-limits usable frequency to ≤40 kHz without added layout complexity.	Use only if legacy design compatibility or dual-sourcing mandates ON Semi parts; verify gate drive loop inductance.

Compared with IKW50N65ES5 and FGH50T65SQD, IKZ50N65NH5XKSA1 delivers superior high-frequency efficiency via Kelvin emitter control and lower switching energy (0.55 mJ total), making it the preferred choice for next-generation solar inverters and UPS systems targeting >98% peak efficiency.

Availability

IKZ50N65NH5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, uninterruptible power supplies, and welding converters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKZ50N65NH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 High-Speed series, engineered specifically for high-efficiency, high-frequency industrial power conversion where low switching loss and robust diode recovery are critical.

FAQ

What is the purpose of the Kelvin emitter (pin K) in IKZ50N65NH5XKSA1?

The Kelvin emitter provides a dedicated low-inductance reference path for the gate driver, isolating gate control from power current transients. This eliminates voltage drop across emitter PCB traces during switching, preventing false turn-off and ensuring precise V_GE regulation-even at di/dt >1000 A/µs. It must be connected directly to the gate driver's emitter reference, not tied to the power emitter (pin E).

Can IKZ50N65NH5XKSA1 replace older IKZ50N65N without layout changes?

No-IKZ50N65NH5XKSA1 has a 4-pin PG-TO247-4 package with separate Kelvin emitter, whereas IKZ50N65N uses a 3-pin TO247. Direct replacement requires PCB redesign to route the Kelvin emitter signal and isolate it from the power emitter net. Gate driver layout must also accommodate the Kelvin reference connection to avoid noise coupling.

What is the maximum recommended gate resistor value for 50 kHz operation?

For reliable 50 kHz switching with minimal EMI and loss, Infineon recommends R_G(on) = 15 Ω and R_G(off) = 20 Ω (as tested in datasheet Fig. E). Using >22 Ω for turn-off increases t_d(off) and E_off disproportionately; values <10 Ω risk gate ringing due to stray inductance unless Kelvin emitter is properly implemented.

Is the RAPID 2 diode in IKZ50N65NH5XKSA1 suitable for zero-current switching (ZCS) topologies?

Yes-the RAPID 2 diode's soft reverse recovery (46 ns trr, 0.49 µC Qrr, 22 A Irrm at 25°C) and controlled dirr/dt (–4330 A/µs) make it well-suited for ZCS applications like resonant flyback and series-resonant converters. Its low stored charge minimizes turn-on loss in the complementary switch and reduces voltage spikes during commutation.

IKZ50N65NH5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Obsolete

IGBT Type:: Trench

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 85 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 50A

Power - Max:: 273 W

Switching Energy:: 350µJ (on), 200µJ (off)

Input Type:: Standard

Gate Charge:: 109 nC

Td (on/off) @ 25°C:: 22ns/252ns

Test Condition:: 400V, 25A, 15Ohm, 15V

Reverse Recovery Time (trr):: 46 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IKZ50N65NH5XKSA1 FAQ

1.How can I place an order for IKZ50N65NH5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZ50N65NH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZ50N65NH5XKSA1 reliable?

The price and inventory of IKZ50N65NH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZ50N65NH5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZ50N65NH5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZ50N65NH5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZ50N65NH5XKSA1?

IKZ50N65NH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZ50N65NH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZ50N65NH5XKSA1?

For technical support, including IKZ50N65NH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZ50N65NH5XKSA1 requirements.

6.How does Aetrix verify that IKZ50N65NH5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZ50N65NH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZ50N65NH5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZ50N65NH5XKSA1?

All IKZ50N65NH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZ50N65NH5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZ50N65NH5XKSA1 part is unused and in its original packaging.

Return procedure for IKZ50N65NH5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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