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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZ75N65EH5XKSA1

Name: IKZ75N65EH5XKSA1
Brand: Infineon Technologies
SKU: IKZ75N65EH5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKZ75N65EH5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZ75N65EH5XKSA1.pdf

Description:: IGBT 650V 90A W/DIO TO247-4

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Product details

Overview

IKZ75N65EH5XKSA1 from Infineon is a 650V, 75A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in PG-TO247-4 package. It features Kelvin emitter pin, 1.65V V_CE(sat) at 25°C, 166 nC gate charge, and 175°C max junction temperature. Used in solar string inverters and welding converters requiring low-loss hard-switching operation.

For engineers reviewing the IKZ75N65EH5XKSA1 datasheet, IKZ75N65EH5XKSA1 pinout, IKZ75N65EH5XKSA1 application, or IKZ75N65EH5XKSA1 equivalent, key selection criteria include V_CE(sat) vs. temperature stability, E_off energy at 150°C, diode Q_rr and trr performance, and Kelvin emitter layout compatibility for gate drive loop optimization.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop structure with integrated Kelvin emitter terminal to minimize Miller-induced voltage spikes and enable precise gate control. Its dynamic characteristics-347 ns t_d(off), 15 ns t_f, and 0.43 mJ E_off at 25°C-are optimized for resonant and hard-switching topologies up to 30 kHz.

The copacked RAPID 1 diode delivers soft reverse recovery (trr = 58 ns, Q_rr = 1.02 µC at 25°C) and low Irrm (29 A), reducing switching losses and EMI in bidirectional power stages. Thermal resistance R_th(j–c) is 0.38 K/W for the IGBT and 0.46 K/W for the diode, enabling high-power density designs with forced-air cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Supports DC bus voltages up to 450 V in 3-phase inverters with 30% safety margin.
I_C	75 A - Continuous collector current rating at T_C = 100°C, defining thermal design baseline for heatsink sizing.
V_CE(sat)	1.65 V @ 25°C - Low conduction loss enables >98% efficiency in 10–20 kW solar inverters at rated load.
Q_G	166 nC - Gate charge value determines required gate driver peak current (≥10 A) and RC time constant for <100 ns switching.
E_off	0.43 mJ @ 25°C - Measured under standardized inductive test conditions; scales with V_CC and I_C for system-level loss modeling.
trr	58 ns @ 25°C - Diode reverse recovery time directly impacts turn-on loss of complementary switch and snubber sizing.
T_vj(max)	175°C - Enables operation at elevated ambient temperatures without derating in industrial enclosures.

Pinout & Package

IKZ75N65EH5XKSA1 uses the PG-TO247-4 package, featuring isolated collector (backside and Pin C), emitter (Pin E), Kelvin emitter (Pin K), and gate (Pin G). The Kelvin emitter provides low-inductance sensing for accurate gate voltage control independent of power emitter path.

Pin/Terminal	Circuit Role	Design Meaning
Pin C	Collector	Main high-side power terminal; electrically tied to backside metal for low-inductance mounting.
Backside	Collector	Primary heat-sinking surface and current return path; must be mounted to heatsink with thermal interface material.
Pin E	Power Emitter	Carries full load current to external circuit; connects to low-side switching node or DC link capacitor.
Pin K	Kelvin Emitter	Provides dedicated low-current emitter reference for gate driver feedback; must not be connected to Pin E or power ground.
Pin G	Gate	Controls IGBT channel; requires low-impedance gate resistor network (RG(on)/RG(off)) to manage dv/dt and switching speed.

Key Features

Feature	Design Value
Kelvin emitter configuration	Enables stable gate control under high di/dt by eliminating power loop inductance from gate drive reference path.
TRENCHSTOP™ 5 technology	Reduces switching losses by 25% vs. TRENCHSTOP™ 4 while maintaining comparable V_CE(sat) and ruggedness.
RAPID 1 antiparallel diode	Delivers soft reverse recovery with <1.1 µC Q_rr and <60 ns trr, minimizing commutation stress on complementary devices.
JEDEC-qualified reliability	Validated for industrial power applications per JESD47; supports 10-year field life at 175°C junction temperature.

Applications

Solar String Inverters

Welding Converters

Use Scenario: DC-to-AC conversion stage in 5–15 kW photovoltaic inverters operating at 16–25 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side IGBT switch in three-phase bridge; RAPID 1 diode handles freewheeling current during dead-time intervals.

Use Value: 0.43 mJ E_off and 1.02 µC Q_rr reduce total switching loss by ~18% vs. prior-generation IGBTs, improving inverter efficiency from 97.2% to 97.8% at 50% load.

Use Scenario: Primary inverter stage in IGBT-based arc welding machines delivering 200–400 A output with variable-frequency modulation.

IC Role / Device Role / Timing Role: Main power switch in resonant LLC or phase-shifted full-bridge topology; operates with 50–100 µs pulse widths and high di/dt.

Use Value: 175°C T_vj(max) and 0.38 K/W R_th(j–c) allow sustained 300 A pulsed current without thermal shutdown, supporting duty cycles up to 60%.

Uninterruptible Power Supplies

Mid-Frequency Motor Drives

Use Scenario: Online double-conversion UPS systems (10–30 kVA) requiring zero-transfer-time backup and low THD output.

IC Role / Device Role / Timing Role: Output inverter switch; paired with SiC diodes in hybrid configuration to suppress third-harmonic distortion.

Use Value: Soft diode recovery (dirr/dt = −2800 A/µs) reduces voltage overshoot across DC-link capacitors, lowering snubber component stress and size by 35%.

Use Scenario: Variable-frequency drives for HVAC compressors and industrial pumps operating at 2–10 kHz carrier frequencies.

IC Role / Device Role / Timing Role: Half-bridge leg switch in 3-phase inverter; handles regenerative braking energy via RAPID 1 diode conduction.

Use Value: 1.65 V V_CE(sat) at 25°C and flat V_CE(sat) vs. temperature curve ensure consistent conduction loss across −25°C to +70°C ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW75N65ES5	Same 650V/75A rating but uses TRENCHSTOP™ 5 without Kelvin emitter; higher V_CE(sat) (1.75 V) and Q_G (185 nC).	Lacks Kelvin emitter; unsuitable for ultra-low-inductance gate drive layouts or high-di/dt (>5 kA/µs) applications.	Select when cost sensitivity outweighs need for precise gate control and minimal switching loss variation.
FGH75T65SHD	650V/75A IGBT with soft diode, but no Kelvin emitter; higher E_off (0.52 mJ) and slower t_d(off) (420 ns) at 150°C.	Designed for general-purpose industrial drives; less optimized for solar/welding where fast, low-loss switching is critical.	Prefer for legacy designs already using ON Semiconductor gate drivers and layout footprints.

Compared with IKW75N65ES5 and FGH75T65SHD, IKZ75N65EH5XKSA1 delivers superior switching efficiency in high-frequency hard-switching due to its Kelvin emitter and lower E_off/Q_rr, making it optimal for solar and welding where thermal headroom and efficiency margins are constrained.

Availability

IKZ75N65EH5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, welding converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKZ75N65EH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ 5 High Speed series targets high-efficiency power conversion in solar, UPS, and welding systems, emphasizing low conduction and switching losses with robust thermal and reliability performance.

FAQ

What is the purpose of the Kelvin emitter pin (Pin K) on IKZ75N65EH5XKSA1?

The Kelvin emitter pin provides a dedicated low-current reference path for the gate driver's emitter connection, decoupling gate control from high di/dt power current flow through Pin E. This eliminates voltage drop errors caused by emitter inductance (13 nH), ensuring accurate V_GE regulation and stable switching behavior-critical for high-frequency, high-reliability inverters.

Can IKZ75N65EH5XKSA1 replace IKZ75N65EH4 in existing designs?

Yes, IKZ75N65EH5XKSA1 is a plug-and-play replacement for IKZ75N65EH4 with identical PG-TO247-4 footprint and pinout. It improves E_off by ~12% and reduces V_CE(sat) by 0.05 V at 100°C, enabling higher efficiency without layout changes-provided gate driver strength meets the slightly higher Q_G (166 nC vs. 158 nC).

How does the RAPID 1 diode differ from standard FRD diodes in this DuoPack?

The RAPID 1 diode features tailored lifetime control and optimized doping profile to deliver soft reverse recovery (low dirr/dt), reduced Q_rr (1.02 µC), and low forward voltage (1.35 V). Unlike standard FRDs, it minimizes voltage overshoot and oscillation during commutation, reducing snubber losses and EMI generation in high-di/dt applications like welding and solar inverters.

What thermal interface material is recommended for mounting IKZ75N65EH5XKSA1?

A thermally conductive, electrically insulating interface material with ≤0.15 K·cm²/W thermal resistance is recommended-such as 100 µm thick silicone-based grease (e.g., Dow Corning TC-5122) or phase-change pad (e.g., Laird Tflex 400). Mounting torque must not exceed 0.6 Nm on M3 screws to avoid package deformation and ensure uniform thermal contact across the 0.38 K/W R_th(j–c) path.

IKZ75N65EH5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 90 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 2.1V @ 15V, 75A

Power - Max:: 395 W

Switching Energy:: 680µJ (on), 430µJ (off)

Input Type:: Standard

Gate Charge:: 166 nC

Td (on/off) @ 25°C:: 26ns/347ns

Test Condition:: 400V, 37.5A, 10Ohm, 15V

Reverse Recovery Time (trr):: 58 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IKZ75N65EH5XKSA1 FAQ

1.How can I place an order for IKZ75N65EH5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZ75N65EH5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZ75N65EH5XKSA1 reliable?

The price and inventory of IKZ75N65EH5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZ75N65EH5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZ75N65EH5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZ75N65EH5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZ75N65EH5XKSA1?

IKZ75N65EH5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZ75N65EH5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZ75N65EH5XKSA1?

For technical support, including IKZ75N65EH5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZ75N65EH5XKSA1 requirements.

6.How does Aetrix verify that IKZ75N65EH5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZ75N65EH5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZ75N65EH5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZ75N65EH5XKSA1?

All IKZ75N65EH5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZ75N65EH5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZ75N65EH5XKSA1 part is unused and in its original packaging.

Return procedure for IKZ75N65EH5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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