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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZ75N65EL5XKSA1

Name: IKZ75N65EL5XKSA1
Brand: Infineon Technologies
SKU: IKZ75N65EL5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKZ75N65EL5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZ75N65EL5XKSA1.pdf

Description:: IGBT 650V 100A TO247-4

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Product details

Overview

IKZ75N65EL5XKSA1 from Infineon is a 650V, 75A low-V_CE(sat) TRENCHSTOP™ 5 IGBT copacked with a RAPID 1 fast/soft antiparallel diode in a PG-TO247-4 package. It delivers 1.1 V V_CE(sat) at 75 A and 25°C, supports 175°C maximum junction temperature, and features Kelvin emitter (pin K) for precise gate control and reduced Miller effect. It is engineered for high-efficiency industrial power conversion stages in solar inverters and UPS systems.

For engineers reviewing the IKZ75N65EL5XKSA1 datasheet, IKZ75N65EL5XKSA1 pinout, IKZ75N65EL5XKSA1 application, or IKZ75N65EL5XKSA1 equivalent, key selection criteria include V_CE(sat) stability across temperature, diode reverse recovery charge (Q_rr = 1.30 µC at 25°C), gate charge (Q_G = 436 nC), and Kelvin-emitter–enabled gate drive accuracy under high di/dt conditions.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology to achieve best-in-class conduction–switching loss tradeoff. Its integrated RAPID 1 diode provides soft, low-loss reverse recovery (trr = 59 ns, Q_rr = 1.30 µC at 25°C) and low forward voltage (V_F = 1.40 V at 75 A).

The PG-TO247-4 package includes a dedicated Kelvin emitter (pin K) electrically isolated from the main emitter (pin E), enabling accurate gate–emitter voltage sensing and minimizing dynamic gate voltage error during high-speed switching. The backside collector serves as primary thermal path and current return.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - Withstands DC bus voltages up to 650 V in hard-switched topologies without avalanche stress.
I_C	75 A continuous - Rated collector current at T_c = 25°C; derates to 100 A pulsed (t_p ≤ 1 µs) for short-circuit robustness.
V_CE(sat)	1.10 V @ 75 A, 25°C - Enables <1.5 W conduction loss per device at rated current, critical for thermal management in compact designs.
Q_G	436 nC - Determines gate driver power requirement and influences turn-on speed; optimized for 15 V gate drive with low Miller plateau energy.
T_vj(max)	175°C - Supports operation in high-ambient environments and enables higher power density via elevated thermal design limits.
R_th(j-c)	0.28 K/W - Junction-to-case thermal resistance enables direct heatsink mounting with predictable thermal drop for thermal modeling.
trr / Q_rr	59 ns / 1.30 µC @ 25°C - Fast, soft diode recovery minimizes voltage overshoot and EMI in bidirectional current paths like inverter legs.

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole package with isolated Kelvin emitter terminal, metalized backside collector for low-inductance, high-current thermal path, and screw-mount compatible footprint.

Pin/Terminal	Circuit Role	Design Meaning
C & backside	Collector	Main high-side current path and primary thermal interface; backside metallization ensures low R_th(j-c) and minimal stray inductance.
E	Main Emitter	Power return path for collector current; carries full load current and must be routed with low impedance.
K	Kelvin Emitter	Sense-only emitter connection for gate driver feedback; isolates gate loop from power loop to suppress Miller-induced false turn-on.
G	Gate	Control input for MOS-controlled IGBT; requires low-impedance drive due to Q_G = 436 nC and Miller capacitance.

Key Features

Feature	Design Value
Low V_CE(sat) TRENCHSTOP™ 5 technology	1.10 V @ 75 A, 25°C - Reduces conduction losses by ~15% vs. prior-generation 650 V IGBTs, directly improving system efficiency at partial load.
Dedicated Kelvin emitter (pin K)	Electrically isolated emitter sense terminal - Enables stable gate drive under >5 kA/µs di/dt, eliminating dynamic V_GE error and preventing spurious turn-on.
RAPID 1 antiparallel diode	trr = 59 ns, Q_rr = 1.30 µC @ 25°C - Delivers soft recovery with low peak reverse current (I_rrm = 37 A), reducing snubber stress and EMI generation.
JEDEC-qualified 175°C operation	Rated for continuous operation up to 175°C junction temperature - Allows smaller heatsinks and higher power density in space-constrained industrial enclosures.
Pb-free, RoHS-compliant plating	Lead-free matte tin plating on leads and backside - Meets global environmental compliance requirements without sacrificing solderability or thermal performance.

Applications

Solar Photovoltaic Inverters

Uninterruptible Power Supplies (UPS)

Use Scenario: Three-phase string or central inverters converting DC from PV arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 650 V DC link and 50/60 Hz fundamental + kHz PWM switching.

Use Value: Low V_CE(sat) and soft diode recovery reduce thermal stress and improve inverter efficiency above 98.5% at nominal load.

Use Scenario: Online double-conversion UPS systems providing seamless backup during utility outages.

IC Role / Device Role / Timing Role: Bidirectional power switch in inverter and rectifier stages; operates in hard-switched and resonant modes.

Use Value: Kelvin emitter support ensures reliable gate control during rapid load transients and fault conditions, improving system uptime.

Industrial Motor Drives

Welding Machines

Use Scenario: Variable-frequency drives (VFDs) controlling induction or PMSM motors in pumps, fans, and conveyors.

IC Role / Device Role / Timing Role: Output stage IGBT in 3-phase bridge; switches at 2–16 kHz with high dv/dt and di/dt demands.

Use Value: 175°C rating allows sustained overload capability and extended service life in harsh factory environments.

Use Scenario: Inverter-based arc welding equipment requiring high peak current (≥300 A pulsed) and fast response.

IC Role / Device Role / Timing Role: Primary power switch in inverter topology; manages high-current pulses with tight duty cycle control.

Use Value: Low switching energy (E_ts = 4.77 mJ @ 25°C) enables high-frequency modulation while maintaining thermal stability during repetitive weld cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW75N65ES5	Same 650 V/75 A rating but uses TRENCHSTOP™ 5 with enhanced softness; slightly higher V_CE(sat) (1.15 V) and lower Q_G (380 nC).	Optimized for ultra-low EMI in noise-sensitive environments; less suited for highest-efficiency continuous conduction mode.	Select when EMI compliance is prioritized over peak efficiency; verify gate drive strength for lower Q_G.
FGH75T65SHD	650 V/75 A, 3rd-gen Field Stop IGBT; higher V_CE(sat) (1.35 V), no Kelvin emitter, higher Q_rr (2.1 µC).	Lacks Kelvin emitter and soft diode; requires larger snubbers and more conservative gate drive design.	Consider only for cost-sensitive legacy designs where layout cannot accommodate Kelvin routing or soft recovery is noncritical.

Compared with IKW75N65ES5 and FGH75T65SHD, IKZ75N65EL5XKSA1 uniquely balances lowest conduction loss, Kelvin-emitter precision, and soft diode recovery-making it optimal for new high-efficiency, high-reliability inverter platforms where thermal margin and EMI control are co-constrained.

Availability

IKZ75N65EL5XKSA1 is available at Aetrix Electronics and suitable for solar photovoltaic inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for IKZ75N65EL5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 Low V_CE(sat) IGBT product line, designed specifically for high-efficiency, high-power-density industrial inverters and converters operating at 650 V class with demanding thermal and reliability requirements.

FAQ

What is the purpose of the Kelvin emitter (pin K) on IKZ75N65EL5XKSA1?

The Kelvin emitter provides a dedicated, low-current sense path for the gate driver's emitter reference, decoupling the gate control loop from high-di/dt power current flow. This prevents voltage drop across emitter stray inductance from distorting V_GE, thereby eliminating false turn-on during hard commutation-critical for reliable operation in 3-phase inverter bridges.

Can IKZ75N65EL5XKSA1 replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes, it is a direct drop-in replacement for IKZ75N65EH5 in most cases, offering identical pinout, voltage/current ratings, and improved V_CE(sat) and switching loss. However, gate drive impedance and snubber values may require minor optimization due to lower Q_G and faster diode recovery; thermal design benefits from the 175°C rating.

How does the RAPID 1 diode differ from standard FRD diodes in this DuoPack?

The RAPID 1 diode features tailored carrier lifetime control and optimized doping profile to deliver soft reverse recovery (low di/dt during turn-off) and low Q_rr (1.30 µC). Unlike standard fast recovery diodes, it minimizes voltage overshoot and oscillation during IGBT turn-on, reducing snubber losses and EMI without requiring external RC networks.

What is the maximum recommended gate resistor value for reliable switching?

For standard 15 V gate drive, Infineon recommends R_G(on) = 23 Ω and R_G(off) = 4 Ω (as used in datasheet test conditions). Exceeding R_G(off) > 10 Ω increases turn-off time and E_off, risking thermal runaway under short-circuit; R_G(on) < 15 Ω may cause excessive dV/dt stress or gate driver overstress due to Q_G = 436 nC.

IKZ75N65EL5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TrenchStop™ 5

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: -

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 100 A

Current - Collector Pulsed (Icm):: 300 A

Vce(on) (Max) @ Vge, Ic:: 1.35V @ 15V, 75A

Power - Max:: 536 W

Switching Energy:: 1.57mJ (on), 3.2mJ (off)

Input Type:: Standard

Gate Charge:: 436 nC

Td (on/off) @ 25°C:: 120ns/275ns

Test Condition:: 400V, 75A, 23Ohm, 15V

Reverse Recovery Time (trr):: 59 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4

IKZ75N65EL5XKSA1 FAQ

1.How can I place an order for IKZ75N65EL5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZ75N65EL5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZ75N65EL5XKSA1 reliable?

The price and inventory of IKZ75N65EL5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZ75N65EL5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZ75N65EL5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZ75N65EL5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZ75N65EL5XKSA1?

IKZ75N65EL5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZ75N65EL5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZ75N65EL5XKSA1?

For technical support, including IKZ75N65EL5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZ75N65EL5XKSA1 requirements.

6.How does Aetrix verify that IKZ75N65EL5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZ75N65EL5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZ75N65EL5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZ75N65EL5XKSA1?

All IKZ75N65EL5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZ75N65EL5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZ75N65EL5XKSA1 part is unused and in its original packaging.

Return procedure for IKZ75N65EL5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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