Infineon Technologies IKZ75N65NH5XKSA1

Overview

IKZ75N65NH5XKSA1 from Infineon is a 650V, 75A high-speed TRENCHSTOP™ 5 IGBT copacked with a RAPID 2 fast/soft antiparallel diode in a PG-TO247-4 package featuring Kelvin emitter (pin K), standard emitter (pin E), gate (pin G), and collector (pin C). It delivers ultra-low switching loss via Kelvin sensing, supports hard-switching and resonant topologies up to 100 kHz, and operates at junction temperatures up to 175°C. Used in solar string inverters and welding converters.

For engineers reviewing the IKZ75N65NH5XKSA1 datasheet, IKZ75N65NH5XKSA1 pinout, IKZ75N65NH5XKSA1 application, or IKZ75N65NH5XKSA1 equivalent, key selection criteria include V_CE(sat) = 1.65 V @ 25°C, Q_G = 166 nC, t_d(off) = 412 ns, trr = 59 ns, and thermal resistance R_th(j-c) = 0.38 K/W for IGBT and 0.46 K/W for diode.

Technical Context

This IGBT employs TRENCHSTOP™ 5 trench-gate field-stop technology with integrated Kelvin emitter terminal to minimize Miller effect and gate drive loop inductance. Its dual-die DuoPack configuration pairs the IGBT with a co-located RAPID 2 diode exhibiting soft reverse recovery (Q_rr = 0.57 µC, t_rr = 59 ns) and low dirr/dt (–3580 A/µs).

The device is optimized for medium-to-high-frequency industrial power conversion where efficiency at partial load and thermal robustness are critical. Gate threshold voltage V_GE(th) = 3.2–4.8 V ensures stable turn-on margin, while ±20 V DC and ±30 V transient gate rating support reliable drive design under noisy conditions.

Key Specifications

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole power package with isolated collector tab (backside), optimized for high-current, high-thermal-conductivity mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed 650 V IGBT + diode applications.

Compared with IKW75N65ES5 and FGH75T65SHD, IKZ75N65NH5XKSA1 provides superior high-frequency efficiency via Kelvin emitter and lowest combined conduction/switching loss-critical for solar inverters targeting >98.5% peak efficiency.

Availability

IKZ75N65NH5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, welding converters, and uninterruptible power supplies requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for IKZ75N65NH5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ 5 High Speed series, engineered specifically for high-efficiency, medium-to-high-frequency industrial power conversion where low switching loss and thermal resilience are mandatory.

FAQ

What is the purpose of the Kelvin emitter (pin K) on IKZ75N65NH5XKSA1?

The Kelvin emitter provides a dedicated low-impedance reference path for the gate driver, isolating gate control from high di/dt emitter current transients. This prevents false turn-off caused by voltage drop across internal emitter inductance (13 nH), ensuring stable switching at high dV/dt rates up to 50 kV/µs.

Can IKZ75N65NH5XKSA1 replace older TRENCHSTOP™ 4 IGBTs in existing designs?

Yes-it is designed as a plug-and-play upgrade for IKZ75N65EH5 and similar predecessors. Key improvements include 15% lower V_CE(sat), 20% reduced switching energy, and Kelvin emitter support. Layout changes are minimal, but gate resistor values may require optimization to match new Q_G = 166 nC.

Why does the datasheet specify separate collector and diode thermal resistances?

Because the IGBT and RAPID 2 diode share the same die substrate but have distinct thermal paths to the case. R_th(j-c) = 0.38 K/W applies only to IGBT power dissipation, while 0.46 K/W applies to diode conduction loss. Accurate thermal modeling requires treating them separately to avoid overheating either element under asymmetric load conditions.

Is the PG-TO247-4 package RoHS compliant and lead-free?

Yes-IKZ75N65NH5XKSA1 uses Pb-free lead plating and complies fully with RoHS Directive 2011/65/EU. The package meets JEDEC J-STD-020 moisture sensitivity level MSL-1 (unlimited floor life) and supports wave soldering at 260°C for 10 seconds at 1.6 mm from case.