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Infineon Technologies IKZA100N65EH7XKSA1

Part No.:
IKZA100N65EH7XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-4
Datasheet:
AetrixIKZA100N65EH7XKSA1.pdf
Description:
IGBT TRENCH FS 650V 140A TO247-4
Quantity:
Payment:
Payment
Shipping:
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Inventory:204

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Product details

Overview

IKZA100N65EH7XKSA1 from Infineon is a 650 V, 100 A TRENCHSTOP™ IGBT7 co-packed with an Emitter Controlled 7 antiparallel diode in PG-TO247-4-STD-NT3.7 package. It delivers low VCE(sat) (1.65 V typ. @ 100 A, 25 °C), ultra-low switching losses (Eon + Eoff = 2.46 mJ @ 400 V/100 A), and soft reverse recovery (trr = 62 ns @ 25 °C), enabling high-efficiency hard-switching in industrial UPS and EV-charging inverters.

For engineers reviewing the IKZA100N65EH7XKSA1 datasheet, IKZA100N65EH7XKSA1 pinout, IKZA100N65EH7XKSA1 application, or IKZA100N65EH7XKSA1 equivalent, this device supports precise thermal management via dual-source Rth(j-c) values (0.27 K/W IGBT, 0.36 K/W diode), requires gate drive optimization for <30 ns turn-on delay, and integrates humidity-robust packaging validated per JEDEC22-A110.

Technical Context

This IGBT7 die employs field-stop trench gate architecture with optimized carrier lifetime control to achieve simultaneous reduction in conduction and switching losses. Its integrated EC7 diode features tailored minority-carrier lifetime and emitter geometry to suppress voltage overshoot and oscillation during commutation.

The 4-pin TO247 package separates gate and emitter terminals to minimize Miller-induced false turn-on, supporting stable operation at dV/dt > 10 kV/µs. Thermal design must account for independent junction-to-case paths for IGBT and diode dies, each with distinct Rth(j-c) and maximum Tvj = 175 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VCE 650 V - Maximum blocking voltage for 3-level NPC and active neutral-point clamped topologies.
IC 100 A - Continuous collector current rating at Tc = 100 °C, defining thermal derating baseline.
VCE(sat) 1.65 V typ. @ 100 A, 15 V VGE, 25 °C - Directly determines conduction loss and heatsink sizing.
Ets 2.46 mJ @ 400 V/100 A, 25 °C - Total switching energy used to calculate power loss and snubber requirements.
trr 62 ns @ 400 V, 100 A, 25 °C - Diode reverse recovery time critical for minimizing voltage spikes in bridge legs.
Rth(j-c) (IGBT) 0.27 K/W - Enables accurate junction temperature estimation from measured case temperature.
Tvj(max) 175 °C - Absolute maximum junction temperature, requiring thermal design margin per Infineon's 80% recommendation.

Pinout & Package

PG-TO247-4-STD-NT3.7 package with 4 leads: Collector (C), Gate (G), Emitter (E), and Kelvin Emitter (EK). The Kelvin Emitter provides dedicated low-inductance sensing path for gate drive feedback, decoupling power and signal return paths.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Collector) Main power output terminal Carries full load current; connected to DC bus or phase leg; requires low-inductance layout.
Pin 2 (Gate) Control input Drives IGBT channel; sensitive to noise-requires tight gate loop and RC snubber.
Pin 3 (Emitter) Power return path High-current return for collector current; separate from Kelvin Emitter to avoid ground bounce.
Pin 4 (Kelvin Emitter) Sense reference for gate drive Provides clean emitter potential to gate driver IC, eliminating voltage drop error in VGE control.

Key Features

Feature Design Value
Low VCE(sat) with IGBT7 process 1.65 V typ. @ 100 A reduces conduction loss by ~25% vs. IGBT4, lowering heatsink cost and size.
Soft, fast EC7 diode 62 ns trr and -2590 A/µs dirr/dt minimize voltage overshoot and EMI in hard-switched bridges.
Humidity robustness Qualified per JEDEC22-A110 - ensures long-term reliability in humid industrial environments without conformal coating.
Optimized for two/three-level topologies Controlled tail current and symmetric switching enable balanced voltage sharing in NPC and T-type inverters.
PSpice models available Verified behavioral models on infineon.com support accurate loss simulation and gate drive design before prototyping.

Applications

Industrial UPS Systems EV Charging Stations

Use Scenario: Bidirectional DC-AC conversion in online double-conversion UPS with 10–30 kVA output.

IC Role / Device Role / Timing Role: Main inverter switch handling 100 A RMS output current at 16 kHz PWM frequency.

Use Value: Low VCE(sat) and soft diode reduce thermal stress during battery charging/discharging cycles, extending system MTBF.

Use Scenario: AC/DC front-end PFC and DC/DC isolation stage in 22 kW wallbox chargers.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC and synchronous rectifier in LLC resonant converter.

Use Value: Fast, low-loss switching enables >98% efficiency at full load while meeting CISPR-25 Class 5 EMI limits.

String Solar Inverters Industrial Welding Equipment

Use Scenario: Three-phase inverter stage converting 1000 V DC string voltage to grid-synchronized 230/400 V AC.

IC Role / Device Role / Timing Role: Phase-leg switch operating at 12–18 kHz with unipolar modulation.

Use Value: Independent Rth(j-c) values allow precise thermal modeling of IGBT and diode losses, improving derating accuracy.

Use Scenario: Inverter-based arc welding power supply delivering 300 A DC output with rapid current slew rates.

IC Role / Device Role / Timing Role: Primary switching device in inverter topology controlling duty cycle and current waveform shape.

Use Value: Humidity-robust packaging and 175 °C Tvj(max) ensure stable operation in dusty, high-moisture shop-floor environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 650 V IGBT applications.

Alternative Part Technical Difference Application Difference Selection Advice
IKW40N65ES5XKSA1 Lower IC (40 A), higher VCE(sat) (1.75 V), same 4-pin TO247 package Targeted at sub-10 kW systems; lacks PSpice model availability in public domain Select when thermal budget allows higher conduction loss and system power is ≤8 kW.
FGH40N60UFDTU 600 V rating, 40 A, 3-pin TO247, no Kelvin emitter, higher Eoff (2.8 mJ) Designed for cost-sensitive general-purpose inverters; not qualified for humidity exposure Choose only for non-critical 600 V applications where gate drive simplicity outweighs efficiency and reliability needs.

Compared with IKW40N65ES5XKSA1 and FGH40N60UFDTU, IKZA100N65EH7XKSA1 uniquely combines 100 A current capability, Kelvin-emitter precision, and humidity qualification-making it the sole option for high-power, high-reliability industrial inverters demanding both efficiency and long-term field stability.

Availability

IKZA100N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, EV-charging infrastructure, and string solar inverters requiring stable component supply across multi-year production cycles.

Supply support for IKZA100N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-reliability hard-switching inverters in industrial power conversion and electric mobility infrastructure.

FAQ

What gate resistor value is recommended for optimal switching performance?

Infineon recommends RG(on) = RG(off) = 10 Ω for standard evaluation (per datasheet test conditions). For production designs, optimize between 5–15 Ω based on measured dV/dt, EMI, and switching loss trade-offs-lower values reduce turn-on delay but increase peak gate current and EMI risk.

Does the Kelvin Emitter pin require a dedicated PCB trace and connection to the gate driver?

Yes-the Kelvin Emitter must be routed as a low-inductance, noise-immune trace directly to the gate driver's reference input (e.g., UCC53xx "VEE" pin). It must not share copper with the main Emitter power return, as doing so negates its purpose of eliminating source inductance effects on VGE control.

How does humidity robustness impact long-term reliability in outdoor EV chargers?

JEDEC22-A110 qualification ensures resistance to moisture ingress under 85 °C/85% RH cycling, preventing corrosion of bond wires and metallization. This eliminates need for conformal coating in IP65-rated enclosures, reducing assembly cost and avoiding delamination risks over 10+ year field life.

Can this IGBT be used in parallel configurations?

Yes-its positive VCE(sat) temperature coefficient (1.6 V @ 25 °C → 1.6 V @ 175 °C) enables natural current sharing. Parallel operation requires matched gate drive loops, identical PCB layout symmetry, and thermal coupling via shared heatsink to maintain ΔTvj < 5 °C between devices.

IKZA100N65EH7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TRENCHSTOP™
Package/Case:
TO-247-4
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
140 A
Current - Collector Pulsed (Icm):
400 A
Vce(on) (Max) @ Vge, Ic:
1.65V @ 15V, 100A
Power - Max:
429 W
Switching Energy:
1.24mJ (on), 1.22mJ (off)
Input Type:
Standard
Gate Charge:
207 nC
Td (on/off) @ 25°C:
32ns/240ns
Test Condition:
400V, 100A, 10Ohm, 15V
Reverse Recovery Time (trr):
62 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-4-3

IKZA100N65EH7XKSA1 FAQ

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Please submit a Request for Quotation (RFQ) for IKZA100N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of IKZA100N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA100N65EH7XKSA1 is usually 5 days.

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IKZA100N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

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5.How can I obtain technical support or documentation for IKZA100N65EH7XKSA1?

For technical support, including IKZA100N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA100N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKZA100N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZA100N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA100N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZA100N65EH7XKSA1?

All IKZA100N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA100N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZA100N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKZA100N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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