Infineon Technologies IKZA40N120CH7XKSA1

Overview

IKZA40N120CH7XKSA1 from Infineon is a high-speed 1200 V, 40 A TRENCHSTOP™ IGBT 7 co-packed with a full-rated 40 A ultra-fast soft-commutating emitter-controlled 7 Rapid diode in a PG-TO247-4-STD-NT3.7 package. It delivers V_CE(sat) = 1.7 V at 25°C, t_rr = 90 ns (25°C), and Q_rr = 1.51 µC, enabling high-efficiency hard-switching in 2-level inverters and 3-level NPC/T-type topologies for industrial UPS and EV-charging systems.

For engineers reviewing the IKZA40N120CH7XKSA1 datasheet, IKZA40N120CH7XKSA1 pinout, IKZA40N120CH7XKSA1 application, or IKZA40N120CH7XKSA1 equivalent, key selection criteria include its positive V_CE(sat) temperature coefficient for stable paralleling, low switching losses (E_on = 0.97 mJ, E_off = 1.01 mJ at 25°C), and integrated diode's soft recovery (I_rrm = 53 A, dirr/dt = −1560 A/µs) critical for EMI-sensitive high-frequency power conversion.

Technical Context

This device implements Infineon's 7th-generation TRENCHSTOP™ IGBT cell architecture with field-stop trench gate design, optimized for <1 µs total switching time (t_d(on) + t_r + t_d(off) + t_f = 464 ns typ. at 25°C) and reduced tail current. Its co-packaged 7 Rapid diode features emitter-controlled doping and tailored lifetime control to achieve ultra-low Q_rr and soft reverse recovery without snubbers.

The 4-pin TO-247 package separates the Kelvin emitter (pin 4) from the power emitter (pin 2), enabling precise gate drive referencing and eliminating V_GE measurement error due to source inductance. Thermal resistance R_th(j-c) is 0.35 K/W (IGBT) and 0.6 K/W (diode), supporting high-power density designs up to 175°C junction temperature.

Key Specifications

Pinout & Package

Package: PG-TO247-4-STD-NT3.7 - 4-pin single-in-line plastic package with isolated Kelvin emitter terminal, 3.7 mm creepage/clearance, RoHS-compliant lead plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT + diode module applications.

Compared with IXGN40N120B4 and STGW40H120F2, IKZA40N120CH7XKSA1 offers superior switching efficiency (lower E_ts, Q_rr) and gate drive fidelity (Kelvin emitter), making it optimal for high-density, high-frequency, and paralleled configurations in EV charging and solar inverters.

Availability

IKZA40N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging infrastructure, and string solar inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKZA40N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to Infineon's TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-frequency hard-switching power converters in renewable energy and electric mobility applications.

FAQ

What is the purpose of the Kelvin emitter (pin 4) on IKZA40N120CH7XKSA1?

The Kelvin emitter provides a dedicated low-inductance reference path for the gate driver's V_GE measurement, decoupling gate control from high di/dt power emitter transients. This ensures accurate turn-on/turn-off timing and prevents false triggering due to source inductance voltage drop, especially critical in paralleled or high-frequency operation.

Can IKZA40N120CH7XKSA1 replace older TRENCHSTOP™ 5 or 6 IGBTs in existing designs?

Yes, it is footprint-compatible with TO-247-4 packages and offers improved V_CE(sat), switching speed, and diode softness. However, gate drive strength must be verified: its lower input capacitance (C_ies = 5 nF) and higher transconductance (g_fs = 93 S) may require reduced gate resistor values to maintain safe dV/dt and avoid overshoot.

How does the 7 Rapid diode differ from standard FRDs in this co-packaged device?

The 7 Rapid diode uses emitter-controlled doping and optimized carrier lifetime to achieve ultra-low Q_rr (1.51 µC) and soft recovery (low Irrm, controlled dirr/dt), unlike standard FRDs that prioritize speed over softness. This reduces reverse recovery loss and EMI without requiring external snubbers, directly improving system efficiency and EMC compliance.

What thermal derating applies above 100°C case temperature?

At T_c = 100°C, I_C is rated 70 A (pulsed) and 40 A (continuous); continuous current must be linearly derated to zero at T_c = 155°C based on R_th(j-c) = 0.35 K/W and T_vj(max) = 175°C. Derating curves are provided in Figure 7 of the official Infineon datasheet Rev. 1.20.