Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZA40N65EH7XKSA1

Name: IKZA40N65EH7XKSA1
Brand: Infineon Technologies
SKU: IKZA40N65EH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKZA40N65EH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZA40N65EH7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO247-4

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:226

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKZA40N65EH7XKSA1 from Infineon is a 650 V, 40 A TRENCHSTOP™ IGBT7 co-packed with an emitter-controlled 7 diode in a PG-TO247-4-STD-NT3.7 package. It delivers low V_CE(sat) (1.65 V typ. @ 25°C), fast switching (t_d(off) = 134 ns), and soft reverse recovery (t_rr = 49.6 ns), enabling high-efficiency hard-switching in industrial UPS and EV-charging inverters.

For engineers reviewing the IKZA40N65EH7XKSA1 datasheet, IKZA40N65EH7XKSA1 pinout, IKZA40N65EH7XKSA1 application, or IKZA40N65EH7XKSA1 equivalent, key selection criteria include V_CE(sat) temperature stability, diode Q_rr consistency across junction temperature, gate charge (81 nC), and thermal resistance (R_th(j-c) = 0.54 K/W for IGBT).

Technical Context

This IGBT7 device employs field-stop trench gate technology optimized for two- and three-level topologies, featuring a dedicated emitter Kelvin connection to minimize gate loop inductance and improve switching controllability. Its integrated Emitter Controlled 7 diode provides low forward voltage (V_F = 1.65 V typ. @ 25°C) and tightly controlled reverse recovery behavior (Q_rr = 1.09 µC @ 25°C).

The 4-pin TO247 package separates power and Kelvin emitter terminals, enabling precise gate drive referencing and reducing Miller-induced turn-on risk. Thermal design is supported by low junction-to-case resistance (0.54 K/W IGBT, 0.72 K/W diode) and humidity-robust construction qualified per JEDEC47/20/22 for industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	650 V - supports DC bus voltages up to 600 V in 3-phase rectified systems with margin.
I_C	40 A continuous - rated for sustained conduction at T_c = 100°C in forced-air-cooled industrial modules.
V_CE(sat)	1.65 V typ. @ 25°C - reduces conduction loss by ~15% vs. prior IGBT6 generation at same current.
E_off	0.36 mJ @ 25°C - enables higher switching frequencies without excessive thermal penalty in hard-switched converters.
t_rr	49.6 ns @ 25°C - ensures minimal voltage overshoot and reduced snubber stress in inductive switching.
R_th(j-c)	0.54 K/W - allows 105 W power dissipation at T_c = 100°C before reaching 175°C junction limit.
Q_G	81 nC - determines gate driver peak current requirement (~6.5 A for 12.5 Ω gate resistor).

Pinout & Package

Package: PG-TO247-4-STD-NT3.7 - 4-terminal through-hole package with isolated Kelvin emitter (pin 4) for accurate gate control and reduced dynamic losses.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main current path input	High-current connection to DC+ bus; bonded with thick aluminum wire for 160 A pulsed capability.
2 (Gate)	Control signal input	Standard MOS-compatible gate terminal; requires ±20 V rating and low-inductance layout to avoid oscillation.
3 (Emitter)	Main current return path	Power emitter output; carries full load current and must be routed with low impedance to minimize voltage drop.
4 (Kelvin Emitter)	Reference for gate drive	Isolated emitter sense node; connects directly to gate driver ground to eliminate source inductance effects on switching.

Key Features

Feature	Design Value
Low V_CE(sat) with flat temperature coefficient	V_CE(sat) increases only 0.25 V from 25°C to 175°C - simplifies thermal derating and improves system efficiency stability.
Soft, fast-recovery antiparallel diode	t_rr = 49.6 ns and Q_rr = 1.09 µC @ 25°C - minimizes voltage spikes and EMI during commutation in string inverters.
Optimized for hard-switching topologies	Turn-off energy E_off = 0.36 mJ @ 25°C - enables 20–40 kHz operation in industrial UPS without active snubbers.
Humidity-robust construction	Qualified per JEDEC22-A110 - ensures long-term reliability in non-hermetic enclosures exposed to 85°C/85% RH environments.
PSpice models available	Infineon-provided behavioral SPICE model - supports accurate loss estimation and gate drive sizing in pre-layout simulation.

Applications

Industrial UPS

EV-Charging Inverter

Use Scenario: Three-phase 10–30 kVA online double-conversion UPS with IGBT-based inverter stage.

IC Role / Device Role / Timing Role: Main switching device in 2-level or 3-level inverter bridge leg, operating at 16–20 kHz with sinusoidal PWM.

Use Value: Low V_CE(sat) and soft diode reduce conduction + switching losses by ~12% vs. IGBT6, improving system efficiency from 95.1% to 96.3% at full load.

Use Scenario: 11 kW AC Level 2 EV charger using Vienna rectifier + DC-DC + inverter topology.

IC Role / Device Role / Timing Role: Inverter-stage switch handling motor drive or grid-synchronization waveforms at 25 kHz.

Use Value: Kelvin emitter pin enables stable gate control under high di/dt, preventing false turn-on during fast diode recovery in bidirectional power flow.

String Solar Inverter

IGBT-Based Welding Power Supply

Use Scenario: 10–25 kW transformerless string inverter with unipolar modulation and anti-islanding protection.

IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge output stage, subject to repetitive hard switching and high dv/dt.

Use Value: 134 ns t_d(off) and 13 ns fall time allow precise dead-time control (<;500 ns), minimizing shoot-through risk while maintaining THD <;3%.

Use Scenario: 200–300 A arc welding inverter with resonant or hard-switched DC output regulation.

IC Role / Device Role / Timing Role: Primary switching element in full-bridge inverter driving high-frequency transformer at 20–50 kHz.

Use Value: R_th(j-c) = 0.54 K/W and 175°C max T_vj support 100% duty-cycle bursts without thermal throttling during stick welding cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW40N65ES7XKSA1	Same 650 V/40 A rating but uses Emitter Controlled 5 diode; V_F = 1.75 V typ., Q_rr = 1.32 µC - higher diode loss and slower recovery.	Suitable for lower-frequency (<;15 kHz) hard-switched applications where diode softness is less critical.	Select when cost sensitivity outweighs diode performance; not recommended for >20 kHz string inverters.
FGH40N60UFDTU	600 V/40 A IGBT with ultrafast diode; V_CE(sat) = 1.8 V typ., t_rr = 35 ns - lower voltage rating limits DC bus use to ≤540 V.	Better suited for 400 V DC-link systems like server PSUs or low-voltage motor drives.	Choose only if system DC bus is ≤540 V and diode speed is prioritized over conduction loss.

Compared with IKW40N65ES7XKSA1 and FGH40N60UFDTU, IKZA40N65EH7XKSA1 uniquely balances low V_CE(sat), soft diode recovery, and 650 V rating - making it optimal for 600 V-class industrial inverters requiring both efficiency and EMI control.

Availability

IKZA40N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging infrastructure, and solar string inverters requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IKZA40N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The TRENCHSTOP™ IGBT7 product line targets high-efficiency, high-reliability power conversion in industrial motor drives, UPS, and solar/wind inverters - emphasizing low-loss switching, robust thermal performance, and system-level EMI reduction.

FAQ

What is the purpose of the fourth (Kelvin emitter) pin?

The fourth pin is a dedicated Kelvin emitter connection that provides a low-inductance reference point for the gate driver. It isolates the gate return path from high-current emitter transients, eliminating source inductance-induced voltage spikes that could cause false turn-on during fast switching transitions.

Can IKZA40N65EH7XKSA1 replace older IGBT6 devices in existing designs?

Yes, it is a direct drop-in replacement for IKW40N65EH5 and IKW40N65ES5 in most cases, offering improved V_CE(sat) and switching loss. However, gate drive strength must be verified due to higher Q_G (81 nC vs. ~65 nC), and PCB layout should ensure Kelvin emitter routing integrity.

What is the maximum recommended gate resistor value for reliable switching?

For standard hard-switching at 20 kHz, Infineon recommends R_G(on) = 12.5 Ω and R_G(off) = 12.5 Ω based on E_on/E_off balance and dv/dt control. Values above 22 Ω increase switching losses significantly; below 8 Ω risk gate oscillation without proper layout damping.

How does humidity robustness impact long-term field reliability?

JEDEC22-A110 qualification confirms stable parameter drift and no delamination after 1000 hours at 85°C/85% RH. This eliminates moisture-related early-life failures in outdoor or humid indoor installations - critical for solar inverters and EV chargers deployed in tropical climates.

IKZA40N65EH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 160 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 40A

Power - Max:: 210 W

Switching Energy:: 370µJ (on), 360µJ (off)

Input Type:: Standard

Gate Charge:: 81 nC

Td (on/off) @ 25°C:: 13ns/134ns

Test Condition:: 400V, 40A, 12.5Ohm, 15V

Reverse Recovery Time (trr):: 49.6 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IKZA40N65EH7XKSA1 FAQ

1.How can I place an order for IKZA40N65EH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZA40N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZA40N65EH7XKSA1 reliable?

The price and inventory of IKZA40N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA40N65EH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZA40N65EH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZA40N65EH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZA40N65EH7XKSA1?

IKZA40N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZA40N65EH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZA40N65EH7XKSA1?

For technical support, including IKZA40N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA40N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKZA40N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZA40N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA40N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZA40N65EH7XKSA1?

All IKZA40N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA40N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZA40N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKZA40N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…