Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZA50N120CH7XKSA1

Name: IKZA50N120CH7XKSA1
Brand: Infineon Technologies
SKU: IKZA50N120CH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IKZA50N120CH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZA50N120CH7XKSA1.pdf

Description:: IGBT TRENCH FS 1200V 100A TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:85

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IKZA50N120CH7XKSA1 from Infineon is a 1200 V, 50 A high-speed TRENCHSTOP™ IGBT 7 co-packed with a full-rated 50 A ultra-fast recovery emitter-controlled diode in a PG-TO247-4-STD-NT3.7 package. It delivers V_CE(sat) = 1.7 V at 25°C, t_rr = 96 ns (25°C), and Q_rr = 1.74 µC, enabling high-efficiency hard-switching in 2-level inverters and 3-level NPC/T-type topologies for industrial UPS and EV-charging systems.

For engineers reviewing the IKZA50N120CH7XKSA1 datasheet, IKZA50N120CH7XKSA1 pinout, IKZA50N120CH7XKSA1 application, or IKZA50N120CH7XKSA1 equivalent, this device offers verified thermal resistance (R_th(j-c) = 0.29 K/W for IGBT), soft-commutating diode behavior, positive V_CE(sat) temperature coefficient for stable paralleling, and JEDEC-qualified industrial reliability.

Technical Context

This IGBT-diode module integrates Infineon's 7th-generation TRENCHSTOP™ cell architecture with an optimized emitter-controlled diode to minimize switching losses while maintaining soft reverse recovery. Its low Q_rr (1.74 µC typ.) and controlled dirr/dt (–1830 A/µs) reduce voltage overshoot and EMI in high-dV/dt applications.

The device operates up to 175°C junction temperature and features a 4-pin TO-247 package with Kelvin emitter configuration-separating power and sense emitter paths-to improve gate drive stability and reduce dynamic V_CE(sat) variation during fast switching transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE	1200 V - Enables use in 1000 V DC-link industrial and EV-charging systems with margin against transients.
I_C / I_F	50 A continuous - Matches full-rated diode current, eliminating derating mismatch in bidirectional power stages.
V_CE(sat)	1.7 V @ 25°C - Reduces conduction loss in high-current inverter legs; rises to 2.0 V @ 175°C with positive tempco for safe paralleling.
t_rr / Q_rr	96 ns / 1.74 µC @ 25°C - Ultra-low reverse recovery charge enables <600 V bus operation without snubbers in 2L/3L topologies.
R_th(j-c) (IGBT)	0.29 K/W - Supports >199 W power dissipation at T_c = 100°C, critical for compact heatsink designs in string inverters.
Turn-off energy E_off	1.4 mJ @ 25°C - Low switching loss enables >20 kHz hard-switching in welding and UPS applications without excessive cooling.

Pinout & Package

Package: PG-TO247-4-STD-NT3.7 - 4-pin through-hole package with isolated Kelvin emitter terminal (pin 4) for accurate gate control and reduced Miller-induced turn-on risk.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power collector	High-current path for IGBT conduction; bonded directly to copper baseplate for minimal R_th(j-c).
2 (Gate)	Control input	Standard MOS-compatible gate requiring ±20 V rating; driven via low-inductance layout to suppress oscillation.
3 (Emitter)	Main power emitter	Carries full load current; connects to source of external freewheeling path or low-side switch.
4 (Kelvin Emitter)	Sense emitter	Provides dedicated gate-drive return path, decoupling power loop from gate loop to stabilize V_GE during dI/dt.

Key Features

Feature	Design Value
Soft-commutating diode	Low Q_rr (1.74 µC) and controlled Irrm (58 A) minimize voltage spikes and EMI during diode turn-off in inductive loads.
Positive V_CE(sat) tempco	V_CE(sat) increases from 1.7 V to 2.0 V over 25–175°C, enabling natural current sharing when paralleling multiple devices.
Kelvin emitter configuration	Dedicated pin 4 eliminates gate-loop inductance impact on switching timing, improving consistency in high-dI/dt motor drives.
JEDEC-qualified industrial reliability	Validated per JEDEC47/20/22 standards for 175°C operation, supporting >10-year field life in UPS and solar inverter deployments.

Applications

Industrial UPS

EV-Charging Stations

Use Scenario: Three-phase IGBT-based inverter stage converting DC battery or rectified AC to regulated 230/400 VAC output under dynamic load.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 2L or 3L NPC topology; handles 50 A RMS with 1200 V blocking capability.

Use Value: Low E_off (1.4 mJ) and soft diode recovery enable >16 kHz switching without snubber networks, reducing filter size and system cost.

Use Scenario: DC fast charging module converting grid AC to 200–1000 VDC for battery packs, using interleaved PFC + DC-DC stages.

IC Role / Device Role / Timing Role: Primary switch in SiC-assisted hybrid PFC or isolated DC-DC LLC primary side, operating at 20–50 kHz.

Use Value: 175°C max junction temperature and robust R_th(j-c) allow sustained 50 A operation in thermally constrained outdoor enclosures.

String Solar Inverters

Industrial Welding Equipment

Use Scenario: Central or string-level inverter converting PV array DC (up to 1500 V) into grid-synchronized AC using multilevel topologies.

IC Role / Device Role / Timing Role: Main switching device in 3L T-type inverter leg; blocks 1200 V while conducting 50 A with low conduction loss.

Use Value: V_CE(sat) = 1.7 V minimizes thermal stress at partial-load conditions common in variable irradiance environments.

Use Scenario: Inverter-based arc welding power supply delivering pulsed 200 A output with precise duty-cycle control.

IC Role / Device Role / Timing Role: Hard-switched primary-side switch in resonant or square-wave inverter driving high-frequency transformer.

Use Value: Fast turn-on (39 ns) and rise time (13 ns) support precise pulse-width control down to 1 µs resolution for arc stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT-diode module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N120H3	1200 V, 50 A TRENCHSTOP™ 3 generation; higher V_CE(sat) (2.1 V), slower t_rr (140 ns), no Kelvin emitter.	Limited to ≤10 kHz switching; unsuitable for high-density thermal designs due to R_th(j-c) = 0.45 K/W.	Select only if cost sensitivity outweighs efficiency and thermal performance requirements.
FF50R12ME4_B11	1200 V, 50 A EconoDUAL™ half-bridge module with integrated NTC; higher footprint, dual IGBT+diode per phase.	Designed for 3-phase motor drives; requires PCB layout rework and lacks discrete flexibility for custom topologies.	Choose when system-level integration (e.g., gate driver, NTC) and phase-leg symmetry are prioritized over board space and topology freedom.

Compared with IKW50N120H3 and FF50R12ME4_B11, IKZA50N120CH7XKSA1 provides superior switching efficiency (2.45 mJ total E_ts vs. >4.2 mJ), lower thermal resistance, and discrete design flexibility-making it optimal for space-constrained, high-frequency industrial inverters where thermal headroom and layout control are critical.

Availability

IKZA50N120CH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS, EV-charging stations, and string solar inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IKZA50N120CH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's TRENCHSTOP™ IGBT 7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in 1000–1200 V DC-link systems such as solar inverters and industrial motor drives.

FAQ

What is the purpose of the Kelvin emitter pin (pin 4) on IKZA50N120CH7XKSA1?

The Kelvin emitter (pin 4) provides a dedicated low-inductance return path for the gate drive circuit, isolating the gate loop from the high-dI/dt power emitter path. This prevents voltage drop across emitter stray inductance from distorting V_GE, ensuring consistent turn-on timing and suppressing false triggering during fast switching transitions.

Can IKZA50N120CH7XKSA1 be paralleled with identical units?

Yes-its positive temperature coefficient of V_CE(sat) ensures inherent current sharing across parallel devices. At 175°C, V_CE(sat) rises to 2.0 V (vs. 1.7 V at 25°C), causing hotter devices to conduct less current. Successful paralleling requires matched gate drive impedance, symmetrical layout, and thermal coupling to maintain uniform junction temperatures.

How does the diode in IKZA50N120CH7XKSA1 differ from standard FRDs?

This co-packed diode is an emitter-controlled, ultra-fast recovery type with soft recovery characteristics: Q_rr = 1.74 µC and trr = 96 ns at 25°C, plus controlled dirr/dt (–1830 A/µs). Unlike standard FRDs, it avoids abrupt current collapse, minimizing voltage overshoot and EMI-critical for un-snubbed 2L/3L inverter operation.

Is IKZA50N120CH7XKSA1 suitable for 1500 V PV system applications?

No-it is rated for 1200 V V_CE, with recommended maximum DC-link voltage of 1000 V for industrial reliability. While it may withstand short transients above 1200 V, sustained operation at 1500 V violates its absolute maximum rating and voids JEDEC qualification. For 1500 V systems, Infineon's 1700 V IGBTs (e.g., IKZ75N65EH5) are required.

IKZA50N120CH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 1200 V

Current - Collector (Ic) (Max):: 100 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 2.15V @ 15V, 50A

Power - Max:: 398 W

Switching Energy:: 950µJ (on), 1.42mJ (off)

Input Type:: Standard

Gate Charge:: 372 nC

Td (on/off) @ 25°C:: 39ns/333ns

Test Condition:: -

Reverse Recovery Time (trr):: 96 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-U02

IKZA50N120CH7XKSA1 FAQ

1.How can I place an order for IKZA50N120CH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZA50N120CH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZA50N120CH7XKSA1 reliable?

The price and inventory of IKZA50N120CH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA50N120CH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZA50N120CH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZA50N120CH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZA50N120CH7XKSA1?

IKZA50N120CH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZA50N120CH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZA50N120CH7XKSA1?

For technical support, including IKZA50N120CH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA50N120CH7XKSA1 requirements.

6.How does Aetrix verify that IKZA50N120CH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZA50N120CH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA50N120CH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZA50N120CH7XKSA1?

All IKZA50N120CH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA50N120CH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZA50N120CH7XKSA1 part is unused and in its original packaging.

Return procedure for IKZA50N120CH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…