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Home > Products > Discrete Semiconductor Products > Transistors > IGBTs > Single IGBTs

Infineon Technologies IKZA50N65EH7XKSA1

Name: IKZA50N65EH7XKSA1
Brand: Infineon Technologies
SKU: IKZA50N65EH7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IKZA50N65EH7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single IGBTs

Package:: TO-247-4

Datasheet:: IKZA50N65EH7XKSA1.pdf

Description:: IGBT TRENCH FS 650V 80A TO247-4

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Product details

Overview

IKZA50N65EH7XKSA1 from Infineon is a 650 V, 50 A TRENCHSTOP™ IGBT7 co-packed with an emitter-controlled 7 diode in a PG-TO247-4-STD-NT3.7 package. It delivers low V_CE(sat) (1.65 V typ. @ 25°C), fast switching (t_d(off) = 142 ns), and soft reverse recovery (t_rr = 54.6 ns) for high-efficiency hard-switching inverters and UPS systems.

For engineers reviewing the IKZA50N65EH7XKSA1 datasheet, IKZA50N65EH7XKSA1 pinout, IKZA50N65EH7XKSA1 application, or IKZA50N65EH7XKSA1 equivalent, key selection criteria include V_CE(sat) stability over temperature, diode Q_rr consistency at 175°C, gate charge (103 nC), and thermal resistance (R_th(j-c) = 0.46 K/W for IGBT).

Technical Context

This device implements Infineon's 7th-generation trench-gate field-stop IGBT structure with optimized carrier lifetime control, enabling simultaneous reduction of conduction and switching losses. Its integrated Emitter Controlled 7 diode features tailored minority-carrier lifetime and optimized doping profile to suppress voltage overshoot and oscillation during turn-off.

The 4-pin TO-247 package separates the Kelvin emitter (pin 4) from the power emitter (pin 2), enabling precise gate drive referencing and eliminating source inductance impact on switching dynamics. This architecture supports stable operation up to 175°C junction temperature under hard-switching conditions in two-level and three-level topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - Supports DC bus voltages up to 600 V in industrial UPS and string inverters with margin.
I_C cont @ T_c=100°C	76 A - Enables 50 A rated operation with 50% thermal headroom in forced-air-cooled enclosures.
V_CE(sat) @ 50 A, 175°C	1.6 V - Low conduction loss ensures <1.2 W static dissipation per device at full load.
E_off @ 400 V, 50 A	0.97 mJ @ 175°C - Predictable turn-off energy enables accurate thermal modeling in high-temp environments.
t_rr @ 50 A, 175°C	86.4 ns - Soft, controlled diode recovery minimizes voltage spikes and EMI in bidirectional switching stages.
R_th(j-c) (IGBT)	0.46 K/W - Enables direct heatsink mounting with ≤35 K temperature rise at 124 W dissipation.
Q_G	103 nC - Defines gate driver current requirement (≥10 A peak) for 100 ns switching transitions.

Pinout & Package

Package: PG-TO247-4-STD-NT3.7 - 4-pin through-hole package with isolated Kelvin emitter terminal for accurate gate control and reduced dynamic losses.

Pin/Terminal	Circuit Role	Design Meaning
1 (Collector)	Main power collector	High-current path for IGBT conduction; connects to DC+ bus or inverter leg output.
2 (Emitter – Power)	Main power emitter return	Carries full load current to DC–; requires low-inductance PCB layout and heavy copper pour.
3 (Gate)	Control input	Drives IGBT channel; requires low-impedance gate resistor (10 Ω typical) and local decoupling.
4 (Emitter – Kelvin)	Sense/reference emitter	Provides gate drive reference point isolated from power loop inductance; must connect directly to gate driver ground.

Key Features

Feature	Design Value
Separate Kelvin emitter terminal	Eliminates source inductance impact on gate drive, enabling consistent t_d(on)/t_d(off) across temperature and load.
TRENCHSTOP™ IGBT7 cell design	Reduces V_CE(sat) by 15% vs. IGBT4 while maintaining comparable E_off, improving efficiency in 16–20 kHz UPS inverters.
Emitter Controlled 7 diode	Delivers 3.4 µC Q_rr at 175°C with <10% variation - enables predictable snubber sizing and reduced clamp stress.
Humidity robustness qualification	Passes JEDEC JESD22-A110 humidity testing - suitable for outdoor EV charging stations and unsealed industrial enclosures.
Optimized for two/three-level topologies	Controlled tail current and symmetric dv/dt capability support neutral-point-clamped (NPC) and T-type inverter designs without external snubbers.

Applications

Industrial UPS Systems

EV Charging Stations

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz AC output from rectified DC bus under grid failure.

IC Role / Device Role / Timing Role: IGBT switch in inverter leg; operates at 16 kHz with synchronous diode commutation.

Use Value: Low V_CE(sat) reduces conduction loss by 0.8 W per device vs. IGBT5, extending battery runtime by 4.2% at 40 kVA.

Use Scenario: 22 kW AC Level 2 charger using interleaved PFC + DC-DC stage with active rectification.

IC Role / Device Role / Timing Role: High-side switch in three-phase Vienna rectifier; handles 50 A RMS with 100 kHz PWM bursts.

Use Value: Soft diode recovery limits dv/dt to <15 V/ns, reducing EMI filter size by 30% and meeting CISPR 11 Class B.

Photovoltaic String Inverters

Industrial Welding Power Supplies

Use Scenario: 10 kW single-phase transformerless string inverter converting 600–1000 V DC to grid-synchronized AC.

IC Role / Device Role / Timing Role: Half-bridge switch in H6 topology; switches at 20 kHz with bipolar modulation.

Use Value: 0.46 K/W R_th(j-c) allows 76 A continuous rating at T_c = 100°C, supporting 120% overload for 30 s without derating.

Use Scenario: IGBT-based inverter welding power supply delivering 300 A DC output with 10 kHz arc stabilization.

IC Role / Device Role / Timing Role: Primary-side switch in resonant LLC converter; conducts 50 A peak with 500 ns dead-time control.

Use Value: 14 ns fall time at 175°C enables precise arc current regulation with <2% ripple, improving weld bead consistency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IKW50N65ES7	Same 650 V/50 A rating but 3-pin TO-247; no Kelvin emitter; higher V_CE(sat) (1.75 V @ 175°C); 125 nC Q_G.	Lacks separate emitter sense; unsuitable for high-precision gate drive or >15 kHz hard switching.	Select when cost sensitivity outweighs switching precision and thermal margin is ≥20 K.
FGH50T65SQD	650 V/50 A; 4-pin TO-247; V_CE(sat) = 1.7 V @ 175°C; t_rr = 110 ns; R_th(j-c) = 0.55 K/W.	Slower diode recovery increases E_rec by 2.1×, requiring larger snubbers in high-dv/dt applications.	Select only if legacy gate driver compatibility with 15 V logic is mandatory and EMI filtering budget permits.

Compared with IKW50N65ES7 and FGH50T65SQD, IKZA50N65EH7XKSA1 provides superior thermal performance (0.46 K/W), lower switching loss (0.97 mJ E_off), and tighter diode recovery control-critical for compact, high-frequency industrial inverters where thermal density and EMI compliance are constrained.

Availability

IKZA50N65EH7XKSA1 is available at Aetrix Electronics and suitable for industrial UPS systems, EV charging infrastructure, photovoltaic string inverters, and industrial welding equipment requiring stable component supply and long-term production continuity.

Supply support for IKZA50N65EH7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the TRENCHSTOP™ IGBT7 family, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial motor drives, solar inverters, and uninterruptible power supplies operating up to 175°C junction temperature.

FAQ

What is the purpose of the fourth (Kelvin emitter) pin on IKZA50N65EH7XKSA1?

The fourth pin is a dedicated Kelvin emitter connection that provides a low-inductance reference path for the gate driver. It isolates gate drive feedback from high-current power emitter transients, ensuring stable turn-on/turn-off timing and preventing parasitic turn-on due to source inductance. This pin must be routed separately from the main emitter pad and tied directly to the gate driver IC ground.

Can IKZA50N65EH7XKSA1 replace IKW40N65ES5 in an existing 10 kW inverter design?

No direct replacement is recommended. While both are 650 V IGBTs, IKZA50N65EH7XKSA1 has a 4-pin layout versus the 3-pin IKW40N65ES5, requiring PCB redesign to accommodate the Kelvin emitter. Additionally, its lower V_CE(sat) (1.65 V vs. 1.85 V) and reduced Q_G (103 nC vs. 130 nC) demand gate driver recalibration to avoid overcurrent during turn-on and ensure optimal E_off performance.

What is the maximum allowable case temperature for continuous 50 A operation?

At 50 A continuous collector current, the maximum case temperature is 100°C. This is derived from the datasheet's IC = f(Tc) curve and the 76 A rating at Tc = 100°C, providing 52% thermal margin. Operation above 100°C requires derating per the linear derating curve in Figure 2 of the datasheet, with junction temperature limited to 175°C.

Does IKZA50N65EH7XKSA1 require a negative gate voltage for reliable turn-off?

No. The device is fully specified for 0 V to +15 V gate drive, with V_GE(th) ranging from 2.9 V to 4.8 V. A negative gate voltage is not required for safe turn-off, though -5 V to -8 V may be used to improve noise immunity in high-dv/dt environments. Gate drive circuits must limit V_GE to ±20 V absolute maximum per datasheet ratings.

IKZA50N65EH7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: TRENCHSTOP™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

IGBT Type:: Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):: 650 V

Current - Collector (Ic) (Max):: 80 A

Current - Collector Pulsed (Icm):: 200 A

Vce(on) (Max) @ Vge, Ic:: 1.65V @ 15V, 50A

Power - Max:: 250 W

Switching Energy:: 440µJ (on), 490µJ (off)

Input Type:: Standard

Gate Charge:: 103 nC

Td (on/off) @ 25°C:: 15ns/142ns

Test Condition:: 400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr):: 54.6 ns

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IKZA50N65EH7XKSA1 FAQ

1.How can I place an order for IKZA50N65EH7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZA50N65EH7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZA50N65EH7XKSA1 reliable?

The price and inventory of IKZA50N65EH7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA50N65EH7XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZA50N65EH7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZA50N65EH7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IKZA50N65EH7XKSA1?

IKZA50N65EH7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZA50N65EH7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZA50N65EH7XKSA1?

For technical support, including IKZA50N65EH7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA50N65EH7XKSA1 requirements.

6.How does Aetrix verify that IKZA50N65EH7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZA50N65EH7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA50N65EH7XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZA50N65EH7XKSA1?

All IKZA50N65EH7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA50N65EH7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZA50N65EH7XKSA1 part is unused and in its original packaging.

Return procedure for IKZA50N65EH7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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