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Infineon Technologies IKZA50N65SS5XKSA1

Part No.:
IKZA50N65SS5XKSA1
Manufacturer:
Infineon Technologies
Category:
Single IGBTs
Package:
TO-247-4
Datasheet:
AetrixIKZA50N65SS5XKSA1.pdf
Description:
IGBT TRENCH FS 650V 80A TO247-4
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:198

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Product details

Overview

IKZA50N65SS5XKSA1 from Infineon is a CoolSiC™ Hybrid Discrete combining a 650 V, 50 A TRENCHSTOP™ 5 IGBT with a full-rated 6th-generation CoolSiC™ diode in a single PG-TO247-4-3 package. It delivers ultra-low switching losses via Kelvin emitter pin, 1.7 V typical VCE(sat) at 25 °C, and 175 °C max junction temperature-enabling high-efficiency hard-switching industrial SMPS and solar string inverters.

For engineers reviewing the IKZA50N65SS5XKSA1 datasheet, IKZA50N65SS5XKSA1 pinout, IKZA50N65SS5XKSA1 application, or IKZA50N65SS5XKSA1 equivalent, key selection criteria include its four-pin layout (C/E/K/G), 0.55 K/W IGBT Rth(j-c), 1.5 V typical diode VF at 40 A/25 °C, and JEDEC-qualified reliability for UPS and energy storage systems.

Technical Context

This hybrid discrete integrates a silicon IGBT and silicon carbide diode on a shared substrate with isolated thermal paths. The Kelvin emitter (Pin K) enables precise gate control by eliminating source inductance effects, while the 13.0 nH internal emitter inductance is measured 5 mm from case-critical for minimizing voltage overshoot in high-dI/dt switching.

The device operates across -40 to 175 °C junction range and supports 200 A pulsed collector current under 1 µs conditions. Its 10 pF reverse transfer capacitance (Cres) and 110 nC total gate charge enable fast, controllable turn-on/turn-off with low EMI generation in 400 V bus applications.

Key Specifications

ParameterValue and Actual Design Meaning
VCE650 V - Maximum blocking voltage for 400–600 V DC-link industrial power converters
IC50 A - Continuous rated collector current at Tc = 100 °C, defining thermal design margin
VCE(sat)1.7 V typ. @ 50 A/25 °C - Directly determines conduction loss and heatsink sizing
VF (diode)1.5 V typ. @ 40 A/25 °C - Enables lower forward loss than Si diodes in freewheeling path
Rth(j-c) (IGBT)0.55 K/W - Enables 274 W power dissipation at Tc = 25 °C for compact thermal design
Tvj(max)175 °C - Allows operation in high-ambient environments without derating penalties
Eoff0.52 mJ @ 400 V/50 A/25 °C - Quantifies turn-off energy loss critical for efficiency modeling

Pinout & Package

Package: PG-TO247-4-3 - 4-pin through-hole package with isolated Kelvin emitter terminal, optimized for wave soldering and PCB layout simplicity.

Pin/TerminalCircuit RoleDesign Meaning
C & backsideCollectorMain high-side current path; backside metal serves as primary collector thermal interface
EEmitter (power)Power return path for main load current; referenced to gate drive ground
KKelvin emitterDedicated low-inductance sense path for gate driver feedback-eliminates source inductance impact on switching
GGateControl input for IGBT; requires stable ±20 V rating and low-impedance drive

Key Features

FeatureDesign Value
Kelvin emitter pinEnables precise gate control by decoupling power and sensing emitter paths-reducing switching oscillation and improving dV/dt immunity
Hybrid Si/SiC constructionCombines TRENCHSTOP™ 5 IGBT's ruggedness with CoolSiC™ diode's low Qrr and soft recovery-cutting total switching loss vs. Si-only alternatives
JEDEC qualificationValidated per JEDEC20/22 standards for industrial UPS, solar inverters, and SMPS-ensuring long-term reliability under thermal cycling and humidity stress
Plug-and-play replacementDirect drop-in for legacy TO-247 Si IGBTs with same footprint and mounting torque (0.6 Nm for M3 screw)-minimizing redesign effort

Applications

Industrial SMPSSolar String Inverter

Use Scenario: High-frequency 3–10 kW telecom rectifiers and server PSUs operating at 50–100 kHz.

IC Role / Device Role / Timing Role: Main switch in hard-switched two-transistor forward or half-bridge topology, handling 400–600 V DC input.

Use Value: 0.75 mJ total switching energy at 400 V/50 A reduces heatsink volume by ~30% versus comparable Si IGBTs.

Use Scenario: DC-AC conversion stage in residential solar inverters with MPPT tracking and grid synchronization.

IC Role / Device Role / Timing Role: Upper-leg switch in unipolar PWM H-bridge, paired with anti-parallel CoolSiC™ diode for bidirectional current handling.

Use Value: 1.5 V diode VF and soft recovery cut conduction loss and EMI during zero-crossing commutation.

Industrial UPSEnergy Storage System

Use Scenario: Online double-conversion UPS delivering clean 50/60 Hz output with <1 ms switchover time.

IC Role / Device Role / Timing Role: Inverter-stage switch managing battery-to-grid power flow under dynamic load steps.

Use Value: 175 °C Tvj(max) and 0.55 K/W Rth(j-c) sustain >96% efficiency at full load without forced air cooling.

Use Scenario: Bi-directional DC-DC converter interfacing Li-ion battery packs (400–800 V) with AC grid or renewable sources.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology, conducting both charging and discharging currents.

Use Value: 200 A pulsed IC rating supports 2× peak power bursts during regenerative braking or grid fault ride-through.

Equivalent & Alternatives

The following parts are listed as comparable options for similar hybrid IGBT-diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IKW40N65ES5650 V/40 A Si IGBT + Si diode; no Kelvin emitter; higher VCE(sat) (1.9 V); 150 °C Tvj(max)Limited to lower-power (<3 kW) or lower-temperature environments due to reduced current and thermal ratingSelect when cost sensitivity outweighs efficiency gains and Kelvin sensing is unnecessary
FF600R12ME41200 V/600 A dual IGBT module with integrated Si diodes; larger TO-264 package; no Kelvin emitterTargeted at medium-voltage motor drives-not suitable for 650 V SMPS or solar where voltage rating and size must matchChoose only for 1200 V systems requiring higher current; not a direct functional substitute

Compared with IKW40N65ES5, IKZA50N65SS5XKSA1 delivers 12% lower conduction loss and 25% lower switching loss at 400 V, while FF600R12ME4's 1200 V rating and 600 A capacity over-specify for 650 V solar/UPS use-increasing cost and layout complexity without benefit.

Availability

IKZA50N65SS5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, and energy storage systems requiring stable component supply, JEDEC-qualified reliability, and high-temperature operational headroom.

Supply support for IKZA50N65SS5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and advanced IGBT technologies.

This part belongs to Infineon's CoolSiC™ Hybrid Discrete product line-designed specifically to bridge performance gaps between pure Si and full SiC solutions in 600–650 V industrial power conversion.

FAQ

What is the purpose of the Kelvin emitter (Pin K) in IKZA50N65SS5XKSA1?

The Kelvin emitter provides a dedicated low-inductance path for gate driver feedback, isolating the sensing node from high-current emitter transients. This eliminates voltage spikes caused by source inductance during switching, enabling tighter gate control, reduced overshoot, and improved stability in high-dI/dt applications like solar inverters.

Can IKZA50N65SS5XKSA1 replace standard TO-247 IGBTs without PCB changes?

Yes-it uses the PG-TO247-4-3 package with identical mechanical footprint and M3 mounting screw pattern as standard TO-247 devices. Pin C, E, and G align with conventional layouts; Pin K is added without altering pad dimensions, allowing plug-and-play integration into existing designs.

How does the CoolSiC™ diode improve performance over a standard silicon diode in this hybrid?

The integrated 6th-generation CoolSiC™ diode offers 1.5 V typical forward voltage at 40 A and near-zero reverse recovery charge (Qrr). This cuts freewheeling losses by ~40% and eliminates hard reverse recovery spikes-reducing EMI, snubber requirements, and thermal stress compared to Si diodes in the same package.

What thermal derating applies above 100 °C case temperature?

At Tc = 100 °C, continuous collector current drops to 60.5 A (from 80 A at 25 °C), and power dissipation falls to 137 W (from 274 W). Derating follows linear interpolation per datasheet Fig. "Collector current as a function of case temperature", with full 50 A rating maintained up to Tc ≈ 95 °C under typical heatsink conditions.

IKZA50N65SS5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
TrenchStop™ 5
Package/Case:
TO-247-4
Packaging:
Tube
Product Status:
Active
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
80 A
Current - Collector Pulsed (Icm):
200 A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 50A
Power - Max:
274 W
Switching Energy:
230µJ (on), 520µJ (off)
Input Type:
Standard
Gate Charge:
110 nC
Td (on/off) @ 25°C:
19ns/140ns
Test Condition:
400V, 50A, 9Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-4-3

IKZA50N65SS5XKSA1 FAQ

1.How can I place an order for IKZA50N65SS5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IKZA50N65SS5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IKZA50N65SS5XKSA1 reliable?

The price and inventory of IKZA50N65SS5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IKZA50N65SS5XKSA1 is usually 5 days.

3.What payment methods are accepted for IKZA50N65SS5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IKZA50N65SS5XKSA1 transactions.

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IKZA50N65SS5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IKZA50N65SS5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IKZA50N65SS5XKSA1?

For technical support, including IKZA50N65SS5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IKZA50N65SS5XKSA1 requirements.

6.How does Aetrix verify that IKZA50N65SS5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IKZA50N65SS5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IKZA50N65SS5XKSA1 meets industry standards.

7.What is the process for return or replacement of IKZA50N65SS5XKSA1?

All IKZA50N65SS5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IKZA50N65SS5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IKZA50N65SS5XKSA1 part is unused and in its original packaging.

Return procedure for IKZA50N65SS5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IKZA50N65SS5XKSA1 Tags

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